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    KM416S8030B Price and Stock

    Samsung Semiconductor KM416S8030BT-FL

    8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
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    Quest Components KM416S8030BT-FL 14
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    KM416S8030B Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416S8030B Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM416S8030BN Samsung Electronics 128Mb SDRAM Shrink TSOP 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM416S8030BN-G/FH Samsung Electronics 2M x 16-Bit x 4 Banks Synchronous DRAM Shrink TSOP Original PDF
    KM416S8030BN-G/FL Samsung Electronics 2M x 16-Bit x 4 Banks Synchronous DRAM Shrink TSOP Original PDF
    KM416S8030BT-G/F10 Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM416S8030BT-G_F10 Samsung Electronics 2M x 16-Bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 66 MHz (CL=2&3) Original PDF
    KM416S8030BT-G/F8 Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM416S8030BT-G_F8 Samsung Electronics 2M x 16-Bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 125 MHz (CL=3) Original PDF
    KM416S8030BT-G/FA Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM416S8030BT-G_FA Samsung Electronics 2M x 16-Bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 133 MHz (CL=3) Original PDF
    KM416S8030BT-G/FH Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM416S8030BT-G_FH Samsung Electronics 2M x 16-Bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=2) Original PDF
    KM416S8030BT-G/FL Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM416S8030BT-G_FL Samsung Electronics 2M x 16-Bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=3) Original PDF

    KM416S8030B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM416S8030B

    Abstract: No abstract text available
    Text: KM416S8030B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM416S8030B CMOS SDRAM Revision History


    Original     		PDF KM416S8030B 128Mbit 16Bit A10/AP KM416S8030B

    KM416S8030BN

    Abstract: KM416S8030B
    Text: shrink-TSOP KM416S8030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 1999 shrink-TSOP


    Original     		PDF KM416S8030BN 128Mb 16Bit A10/AP KM416S8030BN KM416S8030B

    Untitled

    Abstract: No abstract text available
    Text: KMM366S924BTS PC100 Unbuffered DIMM Revision History Revision 0.0 July 5, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		PDF KMM366S924BTS PC100 118DIA 000DIA 8Mx16 KM416S8030BT

    KMM366S924BTS

    Abstract: 64Mb samsung SDRAM pc133 sdram pc133 SDRAM DIMM KMM366S1723ATS-GA KMM374S823DTS-GA KM416S8030BT
    Text: PC133 Unbuffered DIMM SERIAL PRESENCE DETECT Unbuffered SDRAM DIMM 168pin PC133 4Layer SPD Specification REV. 0.2 Nov. 1999 REV. 0.2 Nov. 1999 PC133 Unbuffered DIMM SERIAL PRESENCE DETECT KMM366S823DTS-GA ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü Organization : 8Mx64


    Original     		PDF PC133 168pin) KMM366S823DTS-GA 8Mx64 KM48S8030DT-GA 375mil 4K/64ms 128byte KMM366S924BTS 64Mb samsung SDRAM pc133 sdram pc133 SDRAM DIMM KMM366S1723ATS-GA KMM374S823DTS-GA KM416S8030BT

    KMM366S924BTS

    Abstract: No abstract text available
    Text: KMM366S924BTS PC133 Unbuffered DIMM Revision History Revision 0.0 Oct., 1999 • PC133 first published. REV. 0 Oct. 1999 KMM366S924BTS PC133 Unbuffered DIMM KMM366S924BTS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM366S924BTS PC133 KMM366S924BTS 8Mx64 8Mx16,

    idc26mr

    Abstract: NM6403 PCI9054 PLX PCI9054 MCM6343TS11 MCM6946TS10 AM29LV200B EPM7128SQC100-7
    Text: Утвержден ЮФКВ.469555.078 -УД Модуль МЦ4.04 Руководство по эксплуатации ЮФКВ. 469555.078 РЭ Инв.№подл. Подп. и дата Взам.инв.№ Инв.№подл. Подп. и дата Справ.№


    Original     		PDF NM6403 NM6403" AM29LV200B" idc26mr NM6403 PCI9054 PLX PCI9054 MCM6343TS11 MCM6946TS10 AM29LV200B EPM7128SQC100-7

    KMM464S924

    Abstract: No abstract text available
    Text: KMM464S924BT1 PC100 SODIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		PDF KMM464S924BT1 PC100 8Mx16 KM416S8030BT KMM464S924

    Untitled

    Abstract: No abstract text available
    Text: KMM366S1724BT PC100 Unbuffered DIMM Revision History Revision 0.0 July 5, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		PDF KMM366S1724BT PC100 118DIA 000DIA 8Mx16 KM416S8030BT

    KM416S8030BT

    Abstract: sAMSUNG PC100-322-620
    Text: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered SDRAM DIMM 168pin 6 Layer SPD Specification Rev. 0.0 November 1999 Rev. 0.0 Nov. 1999 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM • Revision History [Revision 0.0] November 18, 1999 Merged PC100 SDRAM 6 Layer Unbuffered DIMMs based 64SD D-die, 128SD M/A/B-die, 256SD A-die.


    Original     		PDF PC100 168pin) 128SD 256SD KMM366S824DT KMM366S1623DT KMM374S1623DT KM416S8030BT sAMSUNG PC100-322-620

    Untitled

    Abstract: No abstract text available
    Text: KMM464S1724BT1 PC100 SODIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		PDF KMM464S1724BT1 PC100 8Mx16 KM416S8030BT

    Untitled

    Abstract: No abstract text available
    Text: KMM466S1724BT2 PC66 SODIMM Revision History Revision 0.0 July 5, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		PDF KMM466S1724BT2 In466S1724BT2 078Min 00Min) 8Mx16 KM416S8030BT

    Untitled

    Abstract: No abstract text available
    Text: KMM464S1724BT1 PC100 SODIMM Revision History Revision 0,0 June 7,1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    OCR Scan     		PDF KMM464S1724BT1 PC100 8Mx16 KM416S8030BT