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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME D KM416C256/L/SL • 7^4142 DD1343Q Q24 I SHGK CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256/USL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its


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    PDF KM416C256/L/SL DD1343Q KM416C256/USL 130ns KM416C256/USL-8 150ns KM416C256/L/SL-10 KM416C256/USL-7 100ns 180ns

    416C256

    Abstract: KM416C256-7 KM416C256-10 km416c256 km416c256j KM416C256-8
    Text: PRELIMINARY CMOS DRAM KM416C256 2 5 6 K X 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 416C 256 is a CMOS high speed 2 6 2 ,1 4 4 bit X 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM416C256 416C256 40-LEAD KM416C256-7 KM416C256-10 km416c256 km416c256j KM416C256-8

    KM41C4000AJ

    Abstract: KM44C1000AZ "30 pin simm" KM41C4000Z KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble
    Text: FUNCTION GUIDE 2. Product Guide 2.1 Dynamic RAM Generation 1st Gen. 2nd Gen. 3rd Gen. Part Number Organization Speed ns Technology Feature Package Remark KM41C4000J KM41C4000Z KM 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 4M x1 4M x1


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    PDF KM41C4000J KM41C4000Z 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 KM44C1OOOJ KM44C1000Z KM41C4000AJ KM44C1000AZ "30 pin simm" KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C256/L/SL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perfo rm ance range: The Samsung KM416C256/L/SL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM416C256/L/SL 256Kx KM416C256/L/SL KM416C256/USL-7 130ns KM416C256/USL-8 150ns KM416C256/USL-10 100ns 180ns

    PE 8001A

    Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1


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    PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001

    KM424C256Z

    Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100


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    PDF KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C256/L/SL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perfo rm ance range: The Samsung KM416C256/USL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM416C256/L/SL 256Kx KM416C256/USL 130ns KM416C256/L/SL-8 150ns KM416C256/L/SL-10 KM416C256/L/SL-7 100ns 180ns

    KMM591000AN

    Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC


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    PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble

    km416c256

    Abstract: KM416C256Z 416c256
    Text: KM416C256/L/SL CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256/L/SL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan
    PDF KM416C256/L/SL KM416C256/L/SL-7 KM416C256/L/SL-8 KM416C256/L/SL-10 100ns 130ns 150ns 180ns KM416C256/L/SL km416c256 KM416C256Z 416c256