Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 GGlb343 S73 ■ SMGK KM416C1000 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its
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GGlb343
KM416C1000
KM416C1000
130ns
KM416C1000-8
150ns
KM416C1000-10
100ns
180ns
KM416C1000-7
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KM416C1000-7
Abstract: No abstract text available
Text: KM416C1000 CMOS DRAM 1 M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized fo r high performance applications
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KM416C1000
KM416C1000-7
KM416C1000-8
KM416C1000-10
100ns
130ns
150ns
180ns
KM416C1000
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM416C1000 CMOS DRAM 1M x16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM416C1000 is a CMOS high speed 1,048,576 b it x 16 D ynam ic Random A ccess Memory. Its de sig n is o p tim ized fo r high pe rform ance a p p lica tio n s
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KM416C1000
KM416C1000
130ns
150ns
100ns
180ns
KM416C1000-7
KM416C1000-8
KM416C1000-10
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 8 Mega Byte KMM5322000W/WG Fast Page Mode 2M x32 DRAM S IM M , 4K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES • Performance Range' T he Sam sung K M M 5322000W is a 1M bit x 32 D ynam ic RAM high density m em ory module. The
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KMM5322000W/WG
1Mx16
322000W
72-pin
KMM5322000W
130ns
150ns
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 4 Mega Byte KMM5321000W/WG Fast Page Mode 1 M x32 DRAM S IM M , 4K Refresh , 5V Using 1M x16 Byte Word Wide DRAM G EN E R A L DES C R IPTIO N FEATURES • P e rfo rm an ce R ange: T h e S a m s u n g K M M 5 3 2 1 0 0 0 W is a 1M b il x 32 D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . T h e
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KMM5321000W/WG
321000W
130ns
150ns
1Mx16
KM416C1000J
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM416C1000 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C10G0 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM416C1000
KM416C1000-7
KM416C1000-8
KM416C1000-10
130ns
150ns
180ns
KM416C10G0
KM416C1000
200/js
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4mx4
Abstract: 24-PIN
Text: M E M O R Y IC s Dynamic RAM Capacity FUNCTION G UIDE Continued Part Number Organization KM44C4002T Speed(ns) Technology CMOS Static Column CMOS CMOS CMOS Static Column Static Column Static Column CMOS CMOS Static Column Static Column 24 Pin TSOP-ll(Reverse)
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KM44C4002T
KM44C4002TR
KM44C4102J
KM44C4102T
KM44C4102TR
KM44C4010J
KM44C4010T
KM44C4010TR
KM44C4110J
KM44C4110T
4mx4
24-PIN
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