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    KM23V4100C

    Abstract: KM-23V4100CG
    Text: KM23V4100C G/T ci cr*1 ELECTRONICS CMOS Mask ROM 4M-Bit (512K X 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8 (byte mode) 262,144 x 16(word mode) • Supply voltage : 2.7V to 3.6V • Fast access time 3.0V Operation: 150ns(max.)


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    PDF KM23V4100C 8/256K 150ns 120ns KM23V4100C 40-DIP-600 KM23V4100CG -SOP-525 KM23V4100CT 44-TSOP2-400 KM-23V4100CG

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    Abstract: No abstract text available
    Text: KM23V4100CET CMOS Mask ROM ELECTRONICS 4M-Bit 512K X8/256K x16 M-ROM(Extended Temperature :-20°C to 85°C) FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8 (byte mode) 262,144 x 16(word mode) • Supply voltage : 2.7V to 3.6V • Fast access time


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    PDF KM23V4100CET X8/256K 150ns 120ns KM23V4100CET 44-TSOP2-400 KM23V41OOCET 288x8bit

    KM23C16005AG

    Abstract: 44TSOP2 44-TSOP2
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density Power Supply 4M bit 5V±10% Part Number KM23C4000C G KM23C4100C(G/T) 8M bit 5V±10% 5V±10% 3.3V-0.3V 5Vt1C% 3 2M bit 3.3V+0.3V , 100 . Extended 512Kx8/256Kx16 100 - 150 KM23V41OOCET 512Kx 8 512Kx8/256Kx16


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    PDF KM23C4000C KM23C4100C KM23C410OCET KM23C4200C 512Kx 512Kx8/256Kx16 512Kx8/256Kx16 KM23C16005AG 44TSOP2 44-TSOP2