KM23V4000DG Search Results

KM23V4000DG Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KM23V4000DG		Samsung Electronics	4M-Bit (512K x 8) CMOS MASK ROM		Original	PDF

KM23V4000DG Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Q721 Abstract: KM23V4000D KM23V4000DG Text: KM23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization The KM23V4000D(G) is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon gate CMOS process technology.	Original	KM23V4000D 512Kx8) 32-DIP KM23C4000DG 32-SOP. 32-SOP-525 118MAX 822MAX Q721 KM23V4000DG	PDF
KM23V4000D Abstract: KM23V4000DG Text: KM23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization The KM23V4000D(G) is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon gate CMOS process technology.	Original	KM23V4000D 512Kx8) 32-DIP KM23V4000DG 32-SOP. 32-SOP-525	PDF
Untitled Abstract: No abstract text available Text: KM23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,283 x 8 bit organization • Fast access time 3.3V O peration: 1Q0ns(Max.) 3.0V O peration: 120ns(Max.) • Supply voltag e: single +3.0V/ single +3.3V • Current consumption	OCR Scan	KM23V4000D 512Kx8) 120ns 23V40000 32-DIP-600 KM23V4000DG 32-SOP-525 KM23V40QQD	PDF
Untitled Abstract: No abstract text available Text: KM23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V • Current consumption	OCR Scan	KM23V4000D 512Kx8) 100ns 120ns KM23V4000D 32-DIP-600 KM23V4000DG 32-SOP-525 100pF	PDF