Untitled
Abstract: No abstract text available
Text: RKZ-KJ Series Silicon Planar Zener Diode for Surge Absorption and Stabilizer REJ03G1588-0100 Rev.1.00 Sep 21, 2007 Features • Emboss Taping Reel Pack. • Ultra small Flat Lead Package UFP is suitable for surface mount design. Ordering Information Part No.
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REJ03G1588-0100
PWSF0002ZA-A
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Untitled
Abstract: No abstract text available
Text: RKZ-KJ Series Silicon Planar Zener Diode for Surge Absorption and Stabilizer REJ03G1588-0100 Rev.1.00 Sep 21, 2007 Features • Emboss Taping Reel Pack. • Ultra small Flat Lead Package UFP is suitable for surface mount design. Ordering Information Part No.
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REJ03G1588-0100
REJ03G1588-0100
PWSF0002ZA-A
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voltage stabiliser
Abstract: 4.7 B2 zener 6.8 B2 zener zener diode 3.0 b2 RENESAS RKZ B2 marking code Zener RKZ10B2KJ RKZ11B2KJ RKZ12B2KJ RKZ13B2KJ
Text: RKZ-KJ Series Silicon Planar Zener Diode for Surge Absorption and Stabilizer REJ03G1588-0100 Rev.1.00 Sep 21, 2007 Features • Emboss Taping Reel Pack. • Ultra small Flat Lead Package UFP is suitable for surface mount design. Ordering Information Part No.
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REJ03G1588-0100
REJ03G1588-0100
PWSF0002ZA-A
voltage stabiliser
4.7 B2 zener
6.8 B2 zener
zener diode 3.0 b2
RENESAS RKZ
B2 marking code Zener
RKZ10B2KJ
RKZ11B2KJ
RKZ12B2KJ
RKZ13B2KJ
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DIODE marking S4 59A
Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3
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REJ16G0002-2200
DIODE marking S4 59A
DIODE 1N4148 LL-34
Zener Diode SOD-323 marking code a2
marking v6 zener diode
fairchild marking codes sot-23
RKZ18B2KG
TWPEC 1w402
MTZJ SERIES ZENER DIODES
702 SOT-23 marking KJ
marking 513 SOD-323
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ss 297 transistor
Abstract: Q67000-S118 Q67000-S292
Text: BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 297 200 V 0.48 A 2Ω TO-92 SS 297 Type BSS 297 BSS 297 Ordering Code Q67000-S118
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Q67000-S118
Q67000-S292
E6288
E6325
ss 297 transistor
Q67000-S118
Q67000-S292
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SS88
Abstract: s576 s287 Q62702-S287 Q62702-S303 Q62702-S576
Text: BSS 88 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 88 240 V 0.25 A 8Ω TO-92 SS88 Type BSS 88 BSS 88 BSS 88 Ordering Code Q62702-S287
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Q62702-S287
Q62702-S303
Q62702-S576
E6288
E6296
E6325
SS88
s576
s287
Q62702-S287
Q62702-S303
Q62702-S576
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SS88
Abstract: Q62702-S287 S576 Q62702-S303 Q62702-S576 BSS88
Text: BSS 88 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 88 240 V 0.25 A 8Ω TO-92 SS88 Type BSS 88 BSS 88 BSS 88 Ordering Code Q62702-S287
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Q62702-S287
Q62702-S303
Q62702-S576
E6288
E6296
E6325
SS88
Q62702-S287
S576
Q62702-S303
Q62702-S576
BSS88
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tr 30 f 124
Abstract: Q67000-S172 ss124
Text: BSS 124 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.5 .2.5 V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 124 400 V 0.12 A 28 Ω TO-92 SS 124 Type BSS 124 Ordering Code Q67000-S172 S Tape and Reel Information
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Q67000-S172
E6288
tr 30 f 124
Q67000-S172
ss124
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ss 297 transistor
Abstract: Q67000-S118 Q67000-S292
Text: BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 297 200 V 0.48 A 2Ω TO-92 SS 297 Type BSS 297 BSS 297 Ordering Code Q67000-S118
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Q67000-S118
Q67000-S292
E6288
E6325
ss 297 transistor
Q67000-S118
Q67000-S292
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Untitled
Abstract: No abstract text available
Text: Single Diode DE10P3 Schottky Barrier Diode mtm OUTLINE U n itlm m Package : E-pack Weight 0.326g Typ H 30 V 1 0A i 1 3 Feature • SMD • SMD • Ultra-Low Vf=0.4V • High lo Rating -Small-PKG •Î2® V f=0.4V l'utYi kj Type No. s Main Use • A ' ì / t U —Ì Ì S K l t
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DE10P3
specifiDE10P3
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diode marking KJ
Abstract: KJ DIODE MARKING
Text: SIEMENS Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped & reel BAT 114-099
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Q62702-A1017
OT-143
EHA07011
diode marking KJ
KJ DIODE MARKING
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAT 15-098 Preliminary Data • DBS mixer application to 10 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration
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Q62702-A0062
OD-123
EHA07001
EHD07088
fl535bQ5
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2866 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2866 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0.3
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2SK2866
20kil)
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B6U 80/100
Abstract: MARK UU1 ERC35 Marking code jSs marking code aj
Text: ERC35 2 .5A g ± 'J : Outline Drawings FAST RECOVERY DIODE * Features ‘ Marking S oft recovery, low noise A ? - 3 - V :» H igh reliability Color code : Silver Abridged type name : Applications %E9 5* AV-K-?-? Voltage class H igh speed sw itch in g . a -j Uto
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ERC35
B6U 80/100
MARK UU1
Marking code jSs
marking code aj
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2882 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt- M O S V 2SK2882 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS ‘i 10 + 0.3
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2SK2882
100//A
20kf2)
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE 2SJ525 SILICON P CHANNEL MOS TYPE L2-tt-M OS V TOSHIBA FIELD EFFECT TRANSISTOR 2SJ525 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • 4V Gate Drive
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2SJ525
100/iA
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Untitled
Abstract: No abstract text available
Text: E R A 8 2 - 0 4 o 6 a i * ± /J • fl- ï fé '+ îi : Outline Drawings SCHOTTKY BARRIER DIODE -N«¡25 1 I 2 5 min' 00.56 25 m,n I 3.0 : Features • 1ftVF Low vF : Marking *17- 3 —H : Ö Super high speed sw itchin g. C o lo r c o d e : W h it e • -f\s—r - ttiist ¿asftiatt
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SK2545 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2545 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm 1 0 Í0 .3
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2SK2545
100/iA
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Untitled
Abstract: No abstract text available
Text: SIEM ENS S ilic o n S w itc h in g D io d e A rray B A W 100 ♦ • For high-speed switching • Electrically insulated diodes Type Marking Ordering Code tape and reel BAW 100 JSs Q62702-A376 Pin Configuration Package1) SOT-143 o- KJ- o
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Q62702-A376
OT-143
flE35bQ5
Q1E043Ã
aiSD43T
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transistor 2SK1120
Abstract: No abstract text available
Text: TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII -5 IN D U S T R IA L A P P L IC A T IO N S U n it in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source O N Resistance
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2SK1120
transistor 2SK1120
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taser circuit
Abstract: 808 nm 100 mw SLD300 SLD323XT SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3
Text: , V J I N Ï I_S L D 3 2 3 X T High Power Density 1 W Laser Diode D escription Unit : mm Package O utline The SLD 323X T is a high power, gain-guided laser diode produced by M OCVD m eth od *1. C om pared to the SLD 300 Series, this laser diode has a high brightness
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SLD323XT
SLD323XT
SLD300
600mW
800mV
taser circuit
808 nm 100 mw
SLD323XT-1
SLD323XT-2
SLD323XT-21
SLD323XT-24
SLD323XT-25
SLD323XT-3
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SK2508 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV] 2SK2508 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SWITCHING REGULATOR AND DC-DC CONVERTER AND MOTOR APPLICATIONS • Low Drain-Source ON Resistance
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2SK2508
100/iA
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TRANSISTOR KJ
Abstract: No abstract text available
Text: 2SK2914 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR 7 Ç t f SILICON N CHANNEL MOS TYPE zr-MOSV ? Q 1 f l INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance
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2SK2914
--50V,
TRANSISTOR KJ
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YTA630
Abstract: transistor yta630
Text: TO SHIBA YTA630 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE zr-MOSV YT Afiifl INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • •
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YTA630
100/uA
YTA630
transistor yta630
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