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    KEC KHB9D0N50P1UP

    N-CHANNEL MOS FIELD EFFECT TRANSISTOR Power Field-Effect Transistor
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    KHB9D0N50P1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KHB9D0N50P1 Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF
    KHB9D0N50P1 Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF

    KHB9D0N50P1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KHB9D0N50F1

    Abstract: KHB9D0N50P1 HW150 ID9AJ
    Text: SEMICONDUCTOR KHB9D0N50P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


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    PDF KHB9D0N50P1/F1 KHB9D0N50F1 KHB9D0N50P1 HW150 ID9AJ

    KHB9D0N50F1

    Abstract: ID9AJ KHB9D0N50F2 KHB9D0N50P1 KHB9D0N50F
    Text: SEMICONDUCTOR KHB9D0N50P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D0N50P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


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    PDF KHB9D0N50P1/F1/F2 KHB9D0N50P1 Fig15. Fig16. Fig17. KHB9D0N50F1 ID9AJ KHB9D0N50F2 KHB9D0N50P1 KHB9D0N50F

    KHB9D0N50F1

    Abstract: KHB9D0N50P1 36 W ballast KHB9D0N50F
    Text: SEMICONDUCTOR KHB9D0N50P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original
    PDF KHB9D0N50P1/F1/F2 KHB9D0N50P1 KHB9D0N50P1 dI/dt200A/, KHB9D0N50F1 36 W ballast KHB9D0N50F

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB9D0N50P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original
    PDF KHB9D0N50P1/F1/F2

    9D0N50P

    Abstract: khb 9D0N50P 9D0N50 KHB9D0N50P1 we 501 DSA0010426
    Text: SEMICONDUCTOR KHB9D0N50P1 MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking 2. Marking KHB 1 1 2 No. Item 9D0N50P 501 3 Marking Description KHB KHB 9D0N50P 9D0N50P Revision 1 1 Lot No. 501 Device Name 2006. 2. 6 Revision No : 0 5 Year


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    PDF KHB9D0N50P1 O-220AB 9D0N50P 220AB 9D0N50P khb 9D0N50P 9D0N50 KHB9D0N50P1 we 501 DSA0010426

    KHB9D0N50F1

    Abstract: KHB9D0N50P1 f936 KHB9D0N50F
    Text: SEMICONDUCTOR KHB9D0N50P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original
    PDF KHB9D0N50P1/F1 KHB9D0N50P1 KHB9D0N50F1 KHB9D0N50P1 f936 KHB9D0N50F

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original
    PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    KF5N50

    Abstract: kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S mje13005 DF06 IC kf13n50
    Text: Package Line-up Outline Name ESM USM TSM SOT-23 FLP-8 DPAK FLP-14 Size[㎣] 1.65x0.85 2.0×1.25 2.9×1.6 2.93×1.3 4.85×3.94×1.6 6.6×6.1 8.66×3.94×1.63 Type No. Package MB6S / M VRRM MBS / M IF Type No. KTC3003 HV 0.5A 600V DF06(S) DF(S) 1N4007(G) DO-41


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    PDF OT-23 FLP-14 KTC3003 1N4007 DO-41 MJE13003 MJE13005 O-126 KF5N50 kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S DF06 IC kf13n50

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    PDF

    KHB9D0N50F1

    Abstract: TJ-108 kq9n50p
    Text: SEMICONDUCTOR KQ9N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description TENTATIVE This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original
    PDF KQ9N50P/F KQ9N50P Fig15. Fig16. Fig17. KHB9D0N50F1 TJ-108 kq9n50p