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    KEC KHB9D0N50F1UP

    N-CHANNEL MOS FIELD EFFECT TRANSISTOR Power Field-Effect Transistor
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    KHB9D0N50F1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KHB9D0N50F1 Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF

    KHB9D0N50F1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9d0n50f

    Abstract: KHB9D0N50F1 9D0N50 khb 9d0n50f TO-220IS KHB9D0N50F TO220IS 6YEAR 9D0N5
    Text: SEMICONDUCTOR KHB9D0N50F1 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking KHB 1 9D0N50F 1 2 No. Item 515 3 Marking Description KHB KHB 9D0N50F 9D0N50F Revision 1 1 Lot No. 515 Device Name 2006. 2. 6 Revision No : 0 5 Year


    Original     		PDF KHB9D0N50F1 O-220IS 9D0N50F 9d0n50f KHB9D0N50F1 9D0N50 khb 9d0n50f TO-220IS KHB9D0N50F TO220IS 6YEAR 9D0N5

    KHB9D0N50F1

    Abstract: KHB9D0N50P1 HW150 ID9AJ
    Text: SEMICONDUCTOR KHB9D0N50P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB9D0N50P1/F1 KHB9D0N50F1 KHB9D0N50P1 HW150 ID9AJ

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    KHB9D0N50F1

    Abstract: ID9AJ KHB9D0N50F2 KHB9D0N50P1 KHB9D0N50F
    Text: SEMICONDUCTOR KHB9D0N50P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D0N50P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB9D0N50P1/F1/F2 KHB9D0N50P1 Fig15. Fig16. Fig17. KHB9D0N50F1 ID9AJ KHB9D0N50F2 KHB9D0N50P1 KHB9D0N50F

    KHB9D0N50F1

    Abstract: KHB9D0N50P1 36 W ballast KHB9D0N50F
    Text: SEMICONDUCTOR KHB9D0N50P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB9D0N50P1/F1/F2 KHB9D0N50P1 KHB9D0N50P1 dI/dt200A/, KHB9D0N50F1 36 W ballast KHB9D0N50F

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    KHB9D0N50F1

    Abstract: TJ-108 kq9n50p
    Text: SEMICONDUCTOR KQ9N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description TENTATIVE This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KQ9N50P/F KQ9N50P Fig15. Fig16. Fig17. KHB9D0N50F1 TJ-108 kq9n50p

    KHB9D0N50F1

    Abstract: KHB9D0N50P1 f936 KHB9D0N50F
    Text: SEMICONDUCTOR KHB9D0N50P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB9D0N50P1/F1 KHB9D0N50P1 KHB9D0N50F1 KHB9D0N50P1 f936 KHB9D0N50F