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    KEC KHB2D0N60FUPMC

    N-CHANNEL MOS FIELD EFFECT TRANSISTOR Power Field-Effect Transistor
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    KHB2D0N60F Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KHB2D0N60F Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF
    KHB2D0N60F2 Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF

    KHB2D0N60F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2D0N60F

    Abstract: KHB2D0N60F KHB 2D0N60F 2d0n60 khb*2d0n60f
    Text: SEMICONDUCTOR KHB2D0N60F MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking. 2. Marking KHB 2D0N60F 515 No. 2005. 7. 28 1 2 Item Marking Description Device Name KHB2D0N60F KHB2D0N60F Lot No. 515 Revision No : 0 5 Year 0~9 : 2000~2009 15


    Original     		PDF KHB2D0N60F O-220IS 2D0N60F 2D0N60F KHB2D0N60F KHB 2D0N60F 2d0n60 khb*2d0n60f

    2d0n60f

    Abstract: KHB 2D0N60F 2d0n60 KHB2D0N60F2 khb*2d0n60f KHB2D0N60F laser marking marking 5
    Text: SEMICONDUCTOR KHB2D0N60F2 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 2D0N60F 2 No. 2007. 5. 23 713 2 Item Marking Description Device Name KHB2D0N60F2 KHB2D0N60F2 Lot No. 713 Revision No : 0 7 Year 0~9 : 2000~2009


    Original     		PDF KHB2D0N60F2 O-220IS 2D0N60F 2d0n60f KHB 2D0N60F 2d0n60 KHB2D0N60F2 khb*2d0n60f KHB2D0N60F laser marking marking 5

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    khb*2D0N60P

    Abstract: KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N60F equivalent
    Text: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		PDF KHB2D0N60P/F/F2 KHB2D0N60P Fig15. Fig16. Fig17. khb*2D0N60P KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N60F equivalent

    O2W transistor

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		PDF KHB2D0N60P/F/F2 KHB2D0N60P KHB2D0N60F KHB2D0N60F2 KHB2D0N60F O2W transistor

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    RG 2006 10A 600V

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB2D0N60P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		PDF KHB2D0N60P1/F1 RG 2006 10A 600V

    khb*2D0N60P

    Abstract: KHB2D0N60F equivalent KHB2D0N60F KHB2D0N60P AVALANCHE TRANSISTOR
    Text: SEMICONDUCTOR KHB2D0N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB2D0N60P/F khb*2D0N60P KHB2D0N60F equivalent KHB2D0N60F KHB2D0N60P AVALANCHE TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB2D0N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		PDF KHB2D0N60P/F KHB2D0N60P

    khb*2D0N60P

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB2D0N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		PDF KHB2D0N60P/F khb*2D0N60P

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    khb*2D0N60P

    Abstract: KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N mosfet 600v 10a to-220ab KHB2D0N60F equivalent
    Text: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		PDF KHB2D0N60P/F/F2 KHB2D0N60P Fig15. Fig16. Fig17. khb*2D0N60P KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N mosfet 600v 10a to-220ab KHB2D0N60F equivalent