1016a
Abstract: No abstract text available
Text: Product Data Sheet T498 Series - KEMET High Temperature 150°C Tantalum Chip Capacitor Features • • • • • 150°C Maximum temperature capability Temperature/Voltage derating: 2/3 at 150°C Self-healing mechanism Capacitance: 0.47 to 220µF Reliability: 0.5%/1000 Hrs. @ rated voltage
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T498D106
1016a
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ATC100B101JW500X
Abstract: ATC100B1R0BW500X C1206104K5RAC GRM43-2X7R10 AGRA10GM JESD22-C101A c.d.m. technology avx 2743019446 AVX Manufacture Label MA4853
Text: Preliminary Data Sheet September 2004 AGRA10GM Plastic Overmold 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Device Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS plastic overmold RF power
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AGRA10GM
AGRA10
IS-95
pro9138
DS04-293RFPP
DS04-257RFPP)
ATC100B101JW500X
ATC100B1R0BW500X
C1206104K5RAC
GRM43-2X7R10
JESD22-C101A
c.d.m. technology avx
2743019446
AVX Manufacture Label
MA4853
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ATC100B101JW500X
Abstract: 08055C103KATMA AGRA10XM cdm 316 JESD22-C101A ATC100B1R0BW500
Text: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Device Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for personal cellular band IS-95 865 MHz to
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AGRA10XM
AGRA10
IS-95
withstan09-9138
DS04-257RFPP
DS04-202RFPP)
ATC100B101JW500X
08055C103KATMA
AGRA10XM
cdm 316
JESD22-C101A
ATC100B1R0BW500
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KX7r
Abstract: transistor c322 marking 34x C102m 102k 2000v KEMET C330 SERIES 183 2000v diode 3000v Sc 6200 equivalent C315
Text: Product Data Sheet Ceramic Conformally Coated/Radial High Voltage Golden Max Outline Drawings Dimensions – Inches & Milimeters Case Size L Max. H Max. T Max. C315 C317 C320 C322 C323 C330 C333 C340 C350 .150 3.81 .150 (3.81) .200 (5.08) .200 (5.08) .200 (5.08)
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240x240 lcd
Abstract: No abstract text available
Text: Flex Suppressor EF Series Overview Applications The EF Series Flex Suppressor ® is an effective suppressor for high frequency noise generated from electronic devices. The flexible sheet is a polymer base blended with micron sized magnetic powders dispersed into the material. The EF Series are
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FS8001
240x240 lcd
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tns capacitors
Abstract: capacitor F3 037 02 100B120FW500X
Text: Preliminary Data Sheet June 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor
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AGRA10E
IS-95
DS04-196RFPP
DS04-096RFPP)
tns capacitors
capacitor F3 037 02
100B120FW500X
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AGRA10E
Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
Text: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable
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AGRA10E
AGRA10E
IS-95
C32/F,
DS03-161RFPP
DS03-038RFPP)
AGR045010
AGRA10EU
JESD22-C101A
2743019446
tns capacitors
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Z5 1512
Abstract: No abstract text available
Text: Document Number: MMG3014NT1 Rev. 4, 8/2014 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a general purpose amplifier that is internally input
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MMG3014NT1
MMG3014NT1
Z5 1512
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MMG3014NT1
Abstract: C0805C209J5GAC ERJ-3GEY0R00V A113 A114 A115 AN1955 C0603C104J5RAC C0805C221J5GAC C101
Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 0, 4/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad
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MMG3014NT1
MMG3014NT1
C0805C209J5GAC
ERJ-3GEY0R00V
A113
A114
A115
AN1955
C0603C104J5RAC
C0805C221J5GAC
C101
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250GX-0300-55-22
Abstract: ATC100B102JT50XT
Text: Freescale Semiconductor Technical Data Document Number: MMRF1012N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1012NR1 Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Device is unmatched and is suitable for use in
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MMRF1012N
MMRF1012NR1
250GX-0300-55-22
ATC100B102JT50XT
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KX7r
Abstract: 273 j 1000v
Text: Product Data Sheet Ceramic Conformally Coated/Radial High Voltage Golden Max Outline Drawings Dimensions – Inches & Milimeters Case Size L Max. H Max. T Max. C315 C317 C320 C322 C323 C330 C333 C340 C350 .150 3.81 .150 (3.81) .200 (5.08) .200 (5.08) .200 (5.08)
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Arlon CuClad PCB board material
Abstract: ATC100B102JT50XT 250GX-0300-55-22 250GX B10T CDR33BX104AKYM 0.1 UF 50V CHIP CAPACITOR ATC200B223KT50XT kemet c1825c225j5rac, 2.2 uf chip cap ATC100B270JT500XT CDR33BX104AKYM
Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 2, 8/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with
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MRF6V2010N
MRF6V2010NR1
MRF6V2010NBR1
MRF6V2010NR1
Arlon CuClad PCB board material
ATC100B102JT50XT
250GX-0300-55-22
250GX
B10T
CDR33BX104AKYM 0.1 UF 50V CHIP CAPACITOR
ATC200B223KT50XT
kemet c1825c225j5rac, 2.2 uf chip cap
ATC100B270JT500XT
CDR33BX104AKYM
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Z5 1512
Abstract: C0805C209J5GAC
Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 2, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input
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MMG3014NT1
MMG3014NT1
Z5 1512
C0805C209J5GAC
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Z5 1512
Abstract: ERJ-3GEY0R00V MMG3014NT1 567 tone A114 A115 AN1955 C0603C104J5RAC C0805C221J5GAC C101
Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 1, 9/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad
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MMG3014NT1
MMG3014NT1
Z5 1512
ERJ-3GEY0R00V
567 tone
A114
A115
AN1955
C0603C104J5RAC
C0805C221J5GAC
C101
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 3, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input
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MMG3014NT1
MMG3014NT1
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Z5 1512
Abstract: M3014N 12065J0R2BS C0805C225J4RAC SOT89A C0603C119J5GAC ERJ-3GEY0R00V C0603C189J5GAC C0805C209J5GAC PCN13337
Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 3, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input
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MMG3014NT1
MMG3014NT1
Z5 1512
M3014N
12065J0R2BS
C0805C225J4RAC
SOT89A
C0603C119J5GAC
ERJ-3GEY0R00V
C0603C189J5GAC
C0805C209J5GAC
PCN13337
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AGR045010
Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB
Text: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor
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AGRA10E
AGRA10E
IS-95
DS04-096RFPP
DS03-161RFPP)
AGR045010
AGRA10EU
JESD22-C101A
RF MOSFET CLASS AB
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RF1000LF
Abstract: RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio
Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
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MRF6V2150N
MRF6V2150NR1
MRF6V2150NBR1
MRF6V2150NR1
RF1000LF
RF600LF-16
2743019447 fair-rite
47nj capacitor
transformer mttf
RF600LF
ATC100B241JT200XT
RF1000LF-9
electrolytic capacitor series WB
RF transformer turn ratio
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
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MRF6V2150N
MRF6V2150NR1
MRF6V2150NBR1
MRF6V2150NR1
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B10T
Abstract: multicomp chip resistor 911 atc100b6r2 ATC200B104 A113 A114 A115 AN1955 C101 JESD22
Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 4, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with
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MRF6V2010N
MRF6V2010NR1
MRF6V2010NBR1
MRF6V2010NR1
B10T
multicomp chip resistor 911
atc100b6r2
ATC200B104
A113
A114
A115
AN1955
C101
JESD22
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ATC100B910
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with
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MRF6V2010N
MRF6V2010NR1
MRF6V2010NBR1
MRF6V2010NR1
ATC100B910
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250GX-0300-55-22
Abstract: ATC100B102JT50XT B10T 1812SMS-82NJ ESMG 2743021447 atc100b6r2 MRF6V2010N MRF6V2010NB MRF6V2010NBR1
Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with
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MRF6V2010N
MRF6V2010NR1
MRF6V2010NBR1
MRF6V2010NR1
250GX-0300-55-22
ATC100B102JT50XT
B10T
1812SMS-82NJ
ESMG
2743021447
atc100b6r2
MRF6V2010N
MRF6V2010NB
MRF6V2010NBR1
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Untitled
Abstract: No abstract text available
Text: KEMET AO-CAP Data Sheet KEMET’s AO-CAP, designated the A700 Series, hasbeentargeted for power management applications. The structure of the AO-CAP uses aluminum as the anode material, aluminum oxide asthe dielectric,and a conductive organic polymer for its counter-electrode material.
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180mm
330mm
D/7343-31
X/7343-43
T491D/47
A700/47
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Untitled
Abstract: No abstract text available
Text: KEMET AO-CAP Data Sheet A700 Series - AO-CAP - Aluminum Organic Capacitor Low-ESR Surface-Mount Aluminum Capacitor with Polymer Cathode KEMET’s AO-CAP, designated the A700 Series, has beentargeted for power management applications. The structure of the AO-CAP
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180mm
330mm
D/7343-31
T491D/47
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