453 optocoupler
Abstract: optocoupler a 454 optocoupler ic 102 Optocoupler OPTOCOUPLER dc output SL5505S
Text: Philips Semiconductors Product specification 7 ^ -V /- High-speed optocoupler flUALITY TECHNOLOGIES SL5505S CORP S7E D 74bb651 0004720 SST • 2TY FEATURES • Short propagation delay times • Low saturation voltage • High transient immunity • High degree of AC and DC
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SL5505S
OT97F
OT212.
74bbflSl
453 optocoupler
optocoupler a 454
optocoupler ic
102 Optocoupler
OPTOCOUPLER dc output
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Untitled
Abstract: No abstract text available
Text: [sia DUAL VERY HIGH-SPEED LOGIC GATE OPTOCOUPLERS OPTOELECTRONICS i _ HCPL-2630 DUAL 10 MBit/s LOGIC GATE HCPL-2631 PACKAGE DIMENSIONS DESCRIPTION The HCPL-2630 and HCPL-2631 dual channel optocouplers have two channels, each consisting of a 700 nm GaAsP LED, optically
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HCPL-2630
HCPL-2631
HCPL-2630
HCPL-2631
4bbfl51
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Untitled
Abstract: No abstract text available
Text: E n SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB865N11/OPB865N51/OPB865N55 The O P B 865N series of switches is designed to allow the SEE NOTE 3 user m axim um flexibility in applications. Each switch consists of an infrared em itting diode facing an NPN phototransistor across a .125" 3.18 m m gap. A unique
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OPB865N11/OPB865N51/OPB865N55
3-18H
OPB865N51
PB865N55
OPB865N
0D0b374
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H11M2
Abstract: H11M1
Text: D U A L IT Y TECHNOLOGIES CORP S7E ]> O p t o i s o l a t o r S p e c i f i c a t i o n s _ 7L>bba¿i ooonagp t4s maty H11M1, H11M2 Optoisolator GaAIAs Infrared Emitting Diode and Light Activated SCR T h e H 11M 1 an d H 11 M2 contain a gallium -alum inum -arsenide, in frared
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H11M1,
H11M2
74bb651
H11M2
H11M1
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Untitled
Abstract: No abstract text available
Text: BQ PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS 1 MCT2 PACKAG E DIMENSIONS DESCRIPTION The M C T 2 is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting t t diode. • a SS I Œ 8.89 8.38 “ J FEATURES & APPLICATIONS
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ST1603A
74bbfl51
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sot212
Abstract: Quality Technologies optocouplers 2ty transistor
Text: P h ilip s S em Product specification GaAIAs high-voltage optocouplers 2UALITY TECHNOLOGIES CORP CNG82/CNG83 S7E 1> • 74t.bfiSl 0 0 0 4 4 3 e T s 5 T " S 7 t Y FEATURES • High output/input current
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CNG82/CNG83
E90700
BS415
0110b
OT212.
74bbflSl
0DD4fl03
sot212
Quality Technologies optocouplers
2ty transistor
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT LED LAMP FLATTYPE OPTIELECTIOIICS RED YELLOW GREEN AIGaAs/RED QTLP282-2 QTLP282-3 QTLP282-4 QTLP282-7 CLEAR CLEAR CLEAR CLEAR PACKAGE DIMENSIONS DESCRIPTION -7 .0 MIN —^ | ï BE ANODE T 2.0 U These subminiature LED lamps are intended for high volume, low cost status
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QTLP282-2
QTLP282-3
QTLP282-4
QTLP282-7
74bb651
0b701
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ST1777
Abstract: No abstract text available
Text: Eli SUPER BRIGHT T-1% 5 mm LED LAMPS OPTOELECTRONICS SUPER SUPER SUPER SUPER These T-1% super bright LEDs have a narrow 12° viewing angle for concentrated light output. The MV8111 is made with a GaAIAs/GaAs LED and the MV8112/3/4 are made with GaAIAs LEDs on a GaAIAs substrate. They are all
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MV8111
MV8112/3/4
MV8112
MV8113
MV8114
ST1776
74bb651
D00b75b
ST1777
ST1777
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Untitled
Abstract: No abstract text available
Text: [ • SUPER BRIGHT T-1% 5 mm LED LAMPS O OPTOELECTRONICS MV8140 CLEAR RED MV8141 CLEAR SUPER RED SUPER RED SUPER SUPER RED PACKAGE DIMENSION! DESCRIPTION These T-1% super bright LEDs have a moderate 40° or 45° viewing angle. The MV8190/1 are 40° and the
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MV8140
MV8141
MV8190/1
MV8140/1
MV8190
MV8191
spac6-110
ST1643
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TJ44
Abstract: No abstract text available
Text: Eü 2.3 5 < 8 DOT MATRIX DISPLAYS OPTÖELEClHOIICS YELLOW GMA 2885C HER GMA2985C GREEN GMA2485C BICOLOR RED/GREEN PACKAGE DIMENSIONS ¡ ¿ li GMC2885C GMC2985C GMC2485C GMA 2685C DESCRIPTION A. GMX2X85C 3 8 .4 ± 0 3 ' 1.52.01 These are 5 x 8 dot matrix displays with large emitting
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2885C
GMA2985C
GMA2485C
GMC2885C
GMC2985C
GMC2485C
2685C
GMX2X85C
GMX2X85C
GMA2685C
TJ44
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Transistor 2TY
Abstract: .2ty transistor npn
Text: CNX48U Û U A L IT Y T E C H N O L O G I E S CORP 7Mhbfi51 OQO M Sb ? 72T • Û T Y S7E D OPTOCOUPLER % Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DIL envelope.
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CNX48U
7Mhbfi51
E90700
0110b
804/VDE
86/HD
74bbfl51
OT212.
74bbflSl
0DD4fl03
Transistor 2TY
.2ty transistor npn
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A817
Abstract: H11AA814 H11AA814A H11A817 H11A817A H11A817B H11A817C H11A817D 4 pin phototransistor 4pin diode
Text: DPmuuHomES 4 -P IN P H O T O TR A N S IS TO R OPTOCOUPLERS H 1 1 A A 8 1 4 S E R IE S H 1 1 A 8 1 7 S E R IE S D E S C R IP T IO N PA C K A G E D IM E N S IO N S The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, con
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h11aa814
h11a817
H11AA814)
H11A817}
trans21
QT-012-A
00DtiT71
A817
H11AA814A
H11A817A
H11A817B
H11A817C
H11A817D
4 pin phototransistor
4pin diode
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