"EN 61326-1"
Abstract: transducer 61326 "Pressure transducer" ppt SD Specification
Text: SUPPLIER DRAWING SD SPECIFICATION H O N E Y W E L L SOLID STATE ELECTRONICS CENTER MINNEAPOLIS, MINNESOTA 55441 Federal Cage Code No. 22024844 34168 TITLE: PPTS, CE SUPPLEMENT, EN 61326-1 PREPARED BY G. Monzo ORIGINATOR APPROVED BY T. Stratton DATE 7/18/01
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Untitled
Abstract: No abstract text available
Text: SCV64 User Manual http://www.silicon360.com The information in this document is subject to change without notice and should not be construed as a commitment by Silicon360. While reasonable precautions have been taken, Silicon360 assumes no responsibility for any errors that may appear in this document.
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SCV64â
silicon360
SCV64
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The VMEbus Handbook, Fourth Ed
Abstract: t428 motorola vme 68040 image processing board tundra scv64 MCR t410 SCV64 B14A equivalent kds 6k 24. 576 t428 t430 transistor
Text: SCV64 User Manual http://www.tundra.com The information in this document is subject to change without notice and should not be construed as a commitment by Tundra Semiconductor Corporation. While reasonable precautions have been taken, Tundra Semiconductor Corporation assumes no responsibility for any errors that may appear in this document.
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SCV64TM
SCV64
The VMEbus Handbook, Fourth Ed
t428 motorola
vme 68040 image processing board
tundra scv64
MCR t410
B14A equivalent
kds 6k 24. 576
t428
t430 transistor
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Untitled
Abstract: No abstract text available
Text: SUPPLIER DRAWING SD SPECIFICATION H O N E Y W E L L SOLID STATE ELECTRONICS CENTER MINNEAPOLIS, MINNESOTA 55441 Federal Cage Code No. 22024843 34168 TITLE: PPTS, CE DoC, EN 61326-1 PREPARED BY G. Monzo ORIGINATOR APPROVED BY T. Stratton DATE 7/18/01 DATE
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16f550
Abstract: 16F54
Text: A Advance information •■ AS4LC1M16F5 3.3V l M x 16 CM O S DRAM fast page mode Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - KAS-only o r CAS-before-KAS refresh • Read-modify-write
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AS4LC1M16F5
42-pin
16F5-60)
AS4LC1M16F5
16f550
16F54
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Untitled
Abstract: No abstract text available
Text: Preliminary information •■ AS4C1M 16F5 A 5V 1M x 16 C M O S DRAM fast page mode Features • 1024 refresh cycles, 16 m s refresh interval • O rganization: 1,048 ,5 7 6 w ords x 16 bits • H igh speed - KAS-only or CAS-before-KAS refresh • R ead-m odify-w rite
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42-pin
44/50-pin
AS4C1M16E0-60)
AS4C1M16F5-50JC
AS4C1M16F5-50JI
AS4C1M16F5-60JC
AS4C1M16F5-60JI
44/50-pin
AS4C1M16F5-50TC
AS4C1M16F5-50TI
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Untitled
Abstract: No abstract text available
Text: Advance information •■ AS4VC256K16E0 A 2.5V 256KX 16 CMOS DRAM EDO Features • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 w ords x 16 bits - RAS-only or CAS-before-RAS refresh or self refresh • H ig h speed - 45/60 ns KAS access tim e
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AS4VC256K16E0
256KX
40-pin
40/44-pin
40-pin
AS4VC256K16E0-45JC
AS4VC256K16E0-60JC
40/44-pin
AS4VC256K16E0-45TC
AS4VC256K16E0-60TC
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Untitled
Abstract: No abstract text available
Text: 1 L E D 6 D D o t O T * 1 M 6 D A o T t R I X MODEL : SSD-D9696DLM Seoul Semiconductor Co., Ltd. 148-29,Kas an-Dong, KeumChun-Ku, Seou1, Kor ea TEL : 82-2-3281-6269 FAX :82-2-858-5537 Web-site : www.seoul-semicon.co.kr Q-00-0553 Rev,0 1.GENERAN DESCRIPTION
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SSD-D9696DLM
Q-00-0553
SSD-D9696DLM
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5 x 8 led dot matrix
Abstract: 8 x 8 led dot matrix MAX280 SSD-D9696DLM 16-DOT 5 x 7 led dot matrix
Text: 16D o t* 16Dot LED DOT MATRIX MODEL : SSD-D9696DLM Seoul Semiconductor Co., Ltd. 148-29,Kas an-Dong, KeumChun-Ku, Seou1, Kor ea TEL : 82-2-3281-6269 FAX :82-2-858-5537 Web-site : ww.seoul-semicon.co.kr Q -0 0 -0 5 5 3 R e v ,0 1.GENERAN DESCRIPTION The SSD-D9696DLM(Cathode Column) is a high reliability epoxy molded 96*96m m 04.6 dot
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16Dot
SSD-D9696DLM
SSD-D9696DLM
96mm04
Q-00-0553
5 x 8 led dot matrix
8 x 8 led dot matrix
MAX280
16-DOT
5 x 7 led dot matrix
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KAS 34
Abstract: MO23 MO-23 CX52 THM368020SG60
Text: TOSHIBA THM368020S/SG-60/70 8,388,608 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM368020 is a 8,388,608 word by 36 bit dynamic RAM module which is assembled with 16 TC5117400J devices and 8 TC514100ASJ devices on the printed circuit board. The THM368020 can be used
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THM368020S/SG-60/70
THM368020
TC5117400J
TC514100ASJ
492mW
THMxxxxxx-60)
A0-A10)
THM368020S/SG
KAS 34
MO23
MO-23
CX52
THM368020SG60
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kx-5t
Abstract: KAS 34
Text: TOSHIBA THM362060AS/ASG -60/70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362060A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 18 TC514400ASJ devices on the printed circuit board. This module is optimized for applications which require
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THM362060AS/ASG
THM362060A
TC514400ASJ
130ns
150ns
039mW
THMxxxxxx-60)
049mW
THMxxxxxx-70)
DQO-35)
kx-5t
KAS 34
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THM3220C0AS
Abstract: KAS 34
Text: TOSHIBA THM3220C0AS/ASG -70/80 2,097,152 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3220C0A is a 2,097,152 word by 32 bit dynamic RAM module which is assembled with 4 TC5118160AJ device on the printed circuit board. This module can be as well used as 4,194,304 word by 16 bit
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THM3220C0AS/ASG
THM3220C0A
TC5118160AJ
xxxxxx-70)
89MAX.
TIIM3220C0AS/ASG
THM3220C0AS
KAS 34
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Untitled
Abstract: No abstract text available
Text: A S 4 C 2 5 6K 1 6F 0 Il 5V 2 5 6 K x 1 6 C M O S DRAM fast page m ode Features • Organization: 262,144 w ords by 16 bits • High speed - 2 5 /3 0 /3 5 /5 0 ns RAS access time - 12/1 6 /1 8 /2 5 ns column address access time - 7 /1 0 /1 0 /1 0 ns CAS access time
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AS4C256K16F0-50)
40-pin
40-pin
AS4C256K16F0-25JC
AS4C256K16F0-30JC
AS4C256K16F0-35JC
AS4C256K16F0-50JC
40/44-pin
AS4C256K16F0-50TC
256K16F0
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Untitled
Abstract: No abstract text available
Text: 8 IO 36.00± Z .35 3.3 PC CARD HEADER V O L T K E Y I N G OP TI ON 2 . 1(0 (.1 0 6) P IN P IN PER P C M C IA 71878 IT E M NUMBER *34 - REF. P IN *l II P IN *68 T A I L L EN G T H DIM ' P ' 1 0 . 3 (1 .0 12 ) ST A N D OFF DIM H E IG H T 'C ' THREADED IN S E R T
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TC514260B
Abstract: tc514273 TC514260BJ
Text: TOSHIBA TC514260BJ/BFT-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514260BJ/BFT is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514260BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC514260BJ/BFT-70/80
TC514260BJ/BFT
TC514273BJ
TC514260BJ/BFT-70/
TC514260B
tc514273
TC514260BJ
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AS4C1M16F5
Abstract: No abstract text available
Text: Preliminary information •■ AS4C1M16F5 1 5V lM x 16 CM OS DRAM fast page mode Features • O rg an izatio n : 1 ,0 4 8 ,5 7 6 w o rd s • H ig h speed X • 1024 refresh cycles, 16 m s refresh in terv al 16 bits - K A S -only o r C A S-before-K A S r e f r e s h
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AS4C1M16F5
AS4C1M16E0-60)
42-pin
AS4C1M16F5-50JC
AS4C1M16F5-60JC
IM16E0
AS4C1M16F5
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thm321000AS
Abstract: No abstract text available
Text: TOSHIBA THM321000AS/ASG -60/70/80 1,048,576 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM 321000A is a 1,048,576 w ord by 32 bit dynam ic RAM m odule w hich is assem bled with eight TC514400A SJ devices on the printed circuit board. This m odule can be used as well as 2,097,152 word by 16
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THM321000AS/ASG
21000A
TC514400A
GG256bD
THM321000ASG
THM321000AS
thm321000AS
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Untitled
Abstract: No abstract text available
Text: BA THM361070AS/ASG -60/70/80 1,048,576 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The TH M 361070AS/ASG is a 1,048,576 w ord by 36 bit dynam ic RA M m odule which is assem bled with 8 TC514400SJ devices on the printed circuit board. T his module is optim ized for applications which require
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THM361070AS/ASG
361070AS/ASG
TC514400SJ
xxxxxx-60)
002STÃ
THM361070AS/ASG
08MAX.
clDc17EMfi
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AFT 518
Abstract: A518 A531 a539 KAS 34
Text: TOSHIBA TC5116180AJ/AFT-60/70/-80 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5116180AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5116180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC5116180AJ/AFT-60/70/-80
TC5116180AJ/AFT
TC5116180AJ/AFT-60/70/80
AFT 518
A518
A531
a539
KAS 34
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TC5118160AJ
Abstract: No abstract text available
Text: TOSHIBA THM3220CQAS/ASG -70/80 2,097,152 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3220C0A is a 2,097,152 word by 32 bit dynamic RAM module which is assembled with 4 TC5118160AJ device on the printed circuit board. This module can be as well used as 4,194,304 word by 16 bit
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THM3220CQAS/ASG
THM3220C0A
TC5118160AJ
562mW
DQ0-31)
Q025A7A
THM3220C0AS/ASG
TIIM322OC0AS/ASG
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DDA010
Abstract: H17j KDS 1M
Text: NEWBRIDGE MICROSYSTEMS SSE D • bSäfllOl 0 D G 0 7 3 1 3 ■ CA91C015 VMEbus DATA ADDRESS REGISTER FILE DARF T -5 2 -3 3 -S 5 Complete VMEbus address and data Interface, exeept buffers Decoupling of CPU and VMEbus Sustained 25-30 Megabyte/second VMEbus
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CA91C015
31-longword
CA91C015
CA91C014
DDA010
H17j
KDS 1M
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC 5 118 18 Q AJ/AFT-70 /8 0 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5118180A J/FT is the new generation dynam ic RAM organized 1,048,576 w ord by 18 bit. The TC5118180AJ/AFT utilizes Toshiba’s CM OS silicon gate process technology as well as advanced circuit
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AJ/AFT-70
TC5118180A
TC5118180AJ/AFT
TCH724fl
TC5118180AJ/AFT-70/80
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kds 4.000
Abstract: KDS 8.000 KDS 4.000 MHZ SR 7231 VAM03 VAM-03 KDS 40 Mhz clock A24D16 DMA24 VMEbus
Text: Üfc« FEBRUARY 1990 TM CA91C015 VMEbus DATA ADDRESS REGISTER FILE DARF Complete VMEbus address and data Interface, except buffers Decoupling of CPU and VMEbus Sustained 25-30 Megabyte/second VMEbus transfer rate Selectable atomic or decoupled mode Programmable A32 and A24 slave Image bases
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31-longword
CA91C015
CA91C014
kds 4.000
KDS 8.000
KDS 4.000 MHZ
SR 7231
VAM03
VAM-03
KDS 40 Mhz clock
A24D16
DMA24
VMEbus
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B1531
Abstract: R0201 H5301
Text: IMPEDANCE Z 25 MHz 100 MHz 300 MHz Nominal (REF^ 109 ft Minimum - ft 210 Q 168 O 347 Q - Q Frequency Z vs. FR EQ U EN C Y (REF. ONLY) SEE DETAIL ”A ” SECTION A - A FREQUENCY (MHz) UNCONTROLLED DOCUMENT AG ILEN T E4991A Impedanca/MateiM Anatyzar HP 16092A Test Fixture REP# 3338
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r-0201
WEIGHT/1000
E4991A
6082A
CONFIDEN74
28B1531
28B1531â
B1531
B1531
R0201
H5301
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