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Samsung Semiconductor K9T1G08U0M-PCB0000
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	K9T1G08U0M-PCB0000		6			1 $16.8 10 $12.6 100 $12.6 1000 $12.6 10000 $12.6	Buy Now
Samsung Semiconductor K9T1G08U0MYIB0 Flash, 128MX8, 45ns, PDSO48
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	K9T1G08U0MYIB0		19,445			1 - 10 - 100 - 1000 - 10000 -	Get Quote

K9T1G08U0M Datasheets (13)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K9T1G08U0M		Samsung Electronics			Original	PDF
K9T1G08U0M-B		Samsung Electronics			Original	PDF
K9T1G08U0M-BCB0		Samsung Electronics			Original	PDF
K9T1G08U0M-F		Samsung Electronics	V(cc): 2.7 -3.6V 128M x 8 bits NAND flash memory		Original	PDF
K9T1G08U0M-FCB0		Samsung Electronics	IC FLASH MEM PARL 2.7V TO 3.6V 1GBIT 128MX8 48WSOP1		Original	PDF
K9T1G08U0M-P		Samsung Electronics	V(cc): 2.7 -3.6V 128M x 8 bits NAND flash memory		Original	PDF
K9T1G08U0M-PCB0		Samsung Electronics	IC FLASH MEM PARL 2.7V TO 3.6V 1GBIT 128MX8 48TSOP I		Original	PDF
K9T1G08U0M-PIB0		Samsung Electronics	IC FLASH MEM PARL 2.7V TO 3.6V 1GBIT 128MX8 48TSOP I		Original	PDF
K9T1G08U0M-V		Samsung Electronics	V(cc): 2.7 -3.6V 128M x 8 bits NAND flash memory		Original	PDF
K9T1G08U0M-VCB0		Samsung Electronics	IC FLASH MEM PARL 2.7V TO 3.6V 1GBIT 128MX8 48WSOP1		Original	PDF
K9T1G08U0M-Y		Samsung Electronics	V(cc): 2.7 -3.6V 128M x 8 bits NAND flash memory		Original	PDF
K9T1G08U0M-YCB0		Samsung Electronics	IC FLASH MEM PARL 2.7V TO 3.6V 1GBIT 128MX8 48TSOP I		Original	PDF
K9T1G08U0M-YIB0		Samsung Electronics	IC FLASH MEM PARL 2.7V TO 3.6V 1GBIT 128MX8 48TSOP I		Original	PDF

K9T1G08U0M Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K9T1G08U0M-V Abstract: K9T1G08U0M-VCB0 K9T1G08U0M-Y K9T1G08U0M-YCB0 Text: K9T1G08U0M-YCB0,YIB0,PCB0,PIB0 K9T1G08U0M-VCB0,VIB0,FCB0,FIB0 FLASH MEMORY Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)]	Original	K9T1G08U0M-YCB0 K9T1G08U0M-VCB0 K9T1G08U0M-V K9T1G08U0M-Y	PDF
Untitled Abstract: No abstract text available Text: Preliminary FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary	Original	K9T1G08U0M	PDF
K9T1G08U0M Abstract: K9T1G08U0M-V K9T1G08U0M-Y SAMSUNG 256Mb NAND Flash Qualification Reliability Text: FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary 0.2	Original	K9T1G08U0M K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y SAMSUNG 256Mb NAND Flash Qualification Reliability	PDF
K9T1G08U0M-YCB0 Abstract: K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-VCB0 K9T1G08U0M-Y Text: K9T1G08U0M-YCB0,YIB0,PCB0,PIB0 K9T1G08U0M-VCB0,VIB0,FCB0,FIB0 FLASH MEMORY Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)]	Original	K9T1G08U0M-YCB0 K9T1G08U0M-VCB0 K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y	PDF
TwB 75 Abstract: SAMSUNG 256Mb NAND Flash Qualification Reliability K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y Samsung Flash Text: Preliminary FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary	Original	K9T1G08U0M TwB 75 SAMSUNG 256Mb NAND Flash Qualification Reliability K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y Samsung Flash	PDF
SAMSUNG NAND FLASH Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8 Text: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for	Original	AN1838 Byte/264 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits SAMSUNG NAND FLASH Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8	PDF
hy27ug082g2m Abstract: hy27ub082g4m hynix nand flash 128mb hynix nand hynix nand flash hy27uh084g2m hynix nand 512M th58nvg st nand flash application note TH58NVG2S3BFT00 Text: eKF5280 USB2.0 Flash Controller Product Specification DOC. VERSION 1.0 ELAN MICROELECTRONICS CORP. February 2006 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation ELAN and ELAN logo	Original	eKF5280 eKF5280 hy27ug082g2m hy27ub082g4m hynix nand flash 128mb hynix nand hynix nand flash hy27uh084g2m hynix nand 512M th58nvg st nand flash application note TH58NVG2S3BFT00	PDF
K9HCG08U5M Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs	OCR Scan	120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand	PDF