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    K9F2G0 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K9F2G08Q0M Samsung Electronics FLASH MEMORY Original PDF
    K9F2G08Q0M-PCB0 Samsung Electronics 256M x 8 Bit NAND Flash Memory Original PDF
    K9F2G08R0A Samsung Electronics FLASH MEMORY Original PDF
    K9F2G08R0A-J Samsung Electronics FLASH MEMORY Original PDF
    K9F2G08U0A Samsung Electronics FLASH MEMORY Original PDF
    K9F2G08U0M Samsung Electronics FLASH MEMORY Original PDF
    K9F2G08U0M-PCB0 Samsung Electronics K9F2G08U0M 256M x 8 Bit NAND Flash Memory, Organization = 256Mx8, Operating Voltage(V) = 2.7~3.6, Temperature = C,i, Speed(ns) = 50, Package = 48TSOP1, Production Status = Engineering Sample, Comments = 0.09um Original PDF
    K9F2G08U0M-PCB0 Samsung Electronics 256M x 8 Bit NAND Flash Memory Original PDF
    K9F2G08UXA Samsung Electronics FLASH MEMORY Original PDF

    K9F2G0 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K9F2G08U0B

    Abstract: K9F2G08U0B-PCB0 K9F2G08U0B-PIB0 samsung ssd 840 K9F2G08U0B-PIB00 K9F2G08U0B-PCB00 Samsung "NAND Flash" "ordering information" samsung k9f2g08U0b K9F2G08U0B-PCB K9F2G08U0B-PIB
    Text: home > Products > Flash > NAND Flash > SLC-Large Block > K9F2G08U0B Flash search product search NAND Flash NAND Flash > SLC-large block > K9F2G08U0B SLC-Small Block package & packing SLC-Large Block production & availability part no. search tip RoHS information


    Original     		K9F2G08U0B K9F2G08U0B-PCB0 K9F2G08U0B-PIB00 K9F2G08U0B-PIB0 K9F2G08U0B-PCB00 K9F2G08U0B samsung ssd 840 Samsung "NAND Flash" "ordering information" samsung k9f2g08U0b K9F2G08U0B-PCB K9F2G08U0B-PIB PDF

    K9F2G08U0B-PCB0

    Abstract: K9F2G08U0B SAMSUNG 4gb NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability K9F2G08X0B K9F2G08U0B-PCB samsung k9f2g08U0b samsung 8GB Nand flash two-plane program nand bad block samsung
    Text: Preliminary FLASH MEMORY K9F2G08B0B K9F2G08U0B K9F2G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F2G08B0B K9F2G08U0B K9F2G08X0B K9F2G08U0B-PCB0 K9F2G08U0B SAMSUNG 4gb NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability K9F2G08X0B K9F2G08U0B-PCB samsung k9f2g08U0b samsung 8GB Nand flash two-plane program nand bad block samsung PDF

    K9F2G08U0M-PCB0

    Abstract: 512M x 8 Bit NAND Flash Memory K9F2G08U0M K9F2G08U0M-XIB0 K9F2G08U0M-YCB0 48-pin TSOP (I) flash memory K9F2G08U0 SAMSUNG NAND Flash Qualification Report samsung toggle mode NAND K9K4G08U1M
    Text: K9K4G08U1M K9F2G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9K4G08U1M K9F2G08U0M K9XXG08UXM 200mV K9F2G08U0M-PCB0 512M x 8 Bit NAND Flash Memory K9F2G08U0M K9F2G08U0M-XIB0 K9F2G08U0M-YCB0 48-pin TSOP (I) flash memory K9F2G08U0 SAMSUNG NAND Flash Qualification Report samsung toggle mode NAND K9K4G08U1M PDF

    K9F2G08X0M

    Abstract: K9F2G08U0M-PCB0 K9F2G08Q0M K9F2G08Q0M-PCB0 K9F2G08U0M K9F2G16Q0M K9F2G16U0M K9F2G08Q0M-Y K9F2G16U0M-Y K9F2G16U0M-Y application
    Text: Preliminary FLASH MEMORY K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device Page 34


    Original     		K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M K9F2G08Q0M K9F2G08U0M K9F2G08X0M K9F2G08U0M-PCB0 K9F2G08Q0M-PCB0 K9F2G16Q0M K9F2G16U0M K9F2G08Q0M-Y K9F2G16U0M-Y K9F2G16U0M-Y application PDF

    nand hamming code 2k bytes

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K9K4G08U1M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34


    Original     		K9K4G08U1M K9F2G08U0M K9F2G16U0M 9F2G08U0M nand hamming code 2k bytes PDF

    K9F2G08U0M-YCB0

    Abstract: No abstract text available
    Text: K9F2G08Q0M-YCB0,YIB0 K9F2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9F2G16Q0M-YCB0,YIB0 K9F2G16U0M-YCB0,YIB0 Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001


    Original     		K9F2G08Q0M-YCB0 K9F2G08U0M-YCB0 K9F2G16Q0M-YCB0 K9F2G16U0M-YCB0 PDF

    K9F2G08R0A

    Abstract: No abstract text available
    Text: K9F2G08R0A K9F2G08U0A FLASH MEMORY K9F2G08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F2G08R0A K9F2G08U0A K9F2G08UXA /apps/Eudora/Attach/272-55085-0000 SG200602672 K9F2G08R0A PDF

    512M x 8 Bit NAND Flash Memory

    Abstract: K9F2G16U0M K9F2G08U0M K9F2G08U0M-PCB0 samsung toggle mode NAND Serial NAND K9K4G08U1M K9F2G08Q0M-PCB0
    Text: Preliminary FLASH MEMORY K9K4G08U1M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34


    Original     		K9K4G08U1M K9F2G08U0M K9F2G16U0M 512M x 8 Bit NAND Flash Memory K9F2G16U0M K9F2G08U0M-PCB0 samsung toggle mode NAND Serial NAND K9K4G08U1M K9F2G08Q0M-PCB0 PDF

    K9F2G08U0M-YCB0

    Abstract: K9F2G16U0M-Y
    Text: K9F2G08Q0M-YCB0,YIB0 K9F2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9F2G16Q0M-YCB0,YIB0 K9F2G16U0M-YCB0,YIB0 Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001


    Original     		K9F2G08Q0M-YCB0 K9F2G08U0M-YCB0 K9F2G16Q0M-YCB0 K9F2G16U0M-YCB0 K9F2G08Q0M K9F2G16U0M-Y PDF

    K9F2G08U0A-PCB0

    Abstract: K9F2G08U0A K9F2G08x0A K9F2G08UXA K9F2G08X0A-XIB0 K9F2G08U0A-P K9F2G08U0A fbga nand flash lga K9F2G08U0 52ULGA
    Text: K9F2G08R0A K9F2G08U0A FLASH MEMORY K9F2G08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F2G08R0A K9F2G08U0A K9F2G08UXA K9F2G08U0A-PCB0 K9F2G08U0A K9F2G08x0A K9F2G08UXA K9F2G08X0A-XIB0 K9F2G08U0A-P K9F2G08U0A fbga nand flash lga K9F2G08U0 52ULGA PDF

    K9F2G08U0B

    Abstract: K9F2G08U0B-P K9F2G08X0B K9F2G08U0 SAMSUNG NAND Flash Qualification Report SAMSUNG 4gb NAND Flash Qualification Report samsung k9f2g08U0b K9F2G08 K9F2G08B0B K9F2G08B0B-P
    Text: Preliminary FLASH MEMORY K9F2G08B0B K9F2G08U0B K9F2G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F2G08B0B K9F2G08U0B K9F2G08X0B K9F2G08U0B K9F2G08U0B-P K9F2G08X0B K9F2G08U0 SAMSUNG NAND Flash Qualification Report SAMSUNG 4gb NAND Flash Qualification Report samsung k9f2g08U0b K9F2G08 K9F2G08B0B-P PDF

    512M x 8 Bit NAND Flash Memory

    Abstract: K9F2G16U0M K9F2G08Q0M K9F2G16X0M
    Text: K9K4G08U1M K9F2G08U0M K9F2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34


    Original     		K9K4G08U1M K9F2G08U0M K9F2G16U0M 200mV 512M x 8 Bit NAND Flash Memory K9F2G16U0M K9F2G08Q0M K9F2G16X0M PDF

    K9F2G08X0M

    Abstract: 48-pin TSOP K9F2G16U0M K9F2G08U0M K9F2G08U0M-PCB0 K9F2G08Q0M K9F2G08Q0M-PCB0 K9F2G16Q0M nand hamming code 2k bytes k9f2g0
    Text: Preliminary FLASH MEMORY K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device Page 34


    Original     		K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M K9F2G08Q0M K9F2G08U0M K9F2G08X0M 48-pin TSOP K9F2G16U0M K9F2G08U0M-PCB0 K9F2G08Q0M-PCB0 K9F2G16Q0M nand hamming code 2k bytes k9f2g0 PDF

    K9F2G08U0A-PCB0

    Abstract: K9F2G08U0A K9F2G08UA K9F2G08x0A K9F2G08R0A-JCB0 K9F2G08U0A-P K9F2G08UXA
    Text: Preliminary FLASH MEMORY K9F2G08R0A K9F2G08U0A K9F2G08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F2G08R0A K9F2G08U0A K9F2G08UXA K9F2G08U0A-PCB0 K9F2G08U0A K9F2G08UA K9F2G08x0A K9F2G08R0A-JCB0 K9F2G08U0A-P K9F2G08UXA PDF

    K9F2G08U0A-PCB0

    Abstract: K9F2G08U0A K9F2G08x0A
    Text: K9F2G08R0A K9F2G08U0A FLASH MEMORY K9F2G08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F2G08R0A K9F2G08U0A K9F2G08UXA K9F2G08U0A-PCB0 K9F2G08U0A K9F2G08x0A PDF

    K9F2G08Q0M

    Abstract: K9F2G08U0M K9F2G08U0M-PCB0 K9F2G08Q0M-PCB0 K9F2G16Q0M K9F2G16U0M K9F2G08Q0M-Y
    Text: Preliminary FLASH MEMORY K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34


    Original     		K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M K9F2G08U0M-PCB0 K9F2G08Q0M-PCB0 K9F2G16Q0M K9F2G16U0M K9F2G08Q0M-Y PDF

    samsung k9f2g08U0C

    Abstract: K9F2G08U0C K9F2G08U0C-SCB0 K9F2G08U0B K9F2G08U0C-SCB K9G2G08U0C SAMSUNG 4gb NAND Flash Qualification Report K9F2G08U0C-S K9F2G08U0C-XCB0 K9F2G08U0C-XIB0
    Text: Rev. 0.2, May. 2010 K9F2G08U0C Advance 2Gb C-die NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K9F2G08U0C K9F2G08U0B 200us 700us K9F2G08U0C 250us 750us samsung k9f2g08U0C K9F2G08U0C-SCB0 K9F2G08U0C-SCB K9G2G08U0C SAMSUNG 4gb NAND Flash Qualification Report K9F2G08U0C-S K9F2G08U0C-XCB0 K9F2G08U0C-XIB0 PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    DFSDM

    Abstract: SAM9M10 K 2141 AC97 ARM926EJ-S AT91SAM ISO7816 NBC 3111 hc 541 rfid reader id-20
    Text: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • – DDR2 Controller 4-bank DDR2/LPDDR, SDR/LPSDR – External Bus Interface supporting 4-bank DDR2/LPDDR, SDR/LPSDR, Static


    Original     		ARM926EJ-STM 64-KByte 6355C 19-Apr-11 DFSDM SAM9M10 K 2141 AC97 ARM926EJ-S AT91SAM ISO7816 NBC 3111 hc 541 rfid reader id-20 PDF

    0x1000000

    Abstract: RF cmos LNA ATSAM3S8CA-AU CI 4046 RS232 Wireless Bluetooth Transceiver 0x4143 ATSAM3S l 7135 SD812 DSAASSA000857.
    Text: Features • Core • • • • • • • – ARM Cortex®-M3 revision 2.0 running at up to 64 MHz – Memory Protection Unit MPU – Thumb®-2 instruction set Pin-to-pin compatible with AT91SAM7S legacy products (64-pin versions), SAM3S4/2/1 products


    Original     		AT91SAM7S 64-pin 128-bit 1090A 10-Feb-12 0x1000000 RF cmos LNA ATSAM3S8CA-AU CI 4046 RS232 Wireless Bluetooth Transceiver 0x4143 ATSAM3S l 7135 SD812 DSAASSA000857. PDF

    iCreate Technologies

    Abstract: i5127-L icreate marking W17 FD13 330ohm resistor K9F1G08U0M FD10FD9 i5127
    Text: Create i5127-L i5127-L High-Speed USB Flash Disk Controller Data Sheet Version 0.90 Preliminary iCreate Technologies Corporation Release date: 2007/07/16 2007 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized.


    Original     		i5127-L iCreate Technologies i5127-L icreate marking W17 FD13 330ohm resistor K9F1G08U0M FD10FD9 i5127 PDF

    Untitled

    Abstract: No abstract text available
    Text: ARM-based Embedded MPU SAM9G35 DATASHEET Description The SAM9G35 is a member of the Atmel series of 400 MHz ARM926EJ-S embedded MPUs that support high bandwidth communication and advanced user interfaces and are optimized for industrial applications such as building automation,


    Original     		SAM9G35 SAM9G35 ARM926EJ-Sâ 10-bit PDF

    ATMEL 234

    Abstract: how to derive sim 900 ARM926EJ-S AT91SAM ISO7816
    Text: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • – DSP Instruction Extensions – ARM Jazelle® Technology for Java® Acceleration – 16-Kbyte Data Cache, 16-Kbyte Instruction Cache, Write Buffer


    Original     		ARM926EJ-STM 16-Kbyte 16-bits 6462B 6-Sep-11 ATMEL 234 how to derive sim 900 ARM926EJ-S AT91SAM ISO7816 PDF

    for lpc3180

    Abstract: UM10198 PLL397 Philips power supply PE 1957 8044 8048 microcontroller role in keyboard interface nand flash algorithm, arm9, micron LM 4088 hynix nand PROGRAMMING K9K1208Q0C
    Text: UM10198 LPC3180 User Manual Rev. 01 — 6 June 2006 Document information Info Content Keywords LPC3180; ARM9; 16/32-bit ARM microcontroller Abstract User manual for LPC3180 User manual UM10198 Philips Semiconductors LPC3180 User Manual Revision history Rev


    Original     		UM10198 LPC3180 LPC3180; 16/32-bit LPC3180 UM10198 for lpc3180 PLL397 Philips power supply PE 1957 8044 8048 microcontroller role in keyboard interface nand flash algorithm, arm9, micron LM 4088 hynix nand PROGRAMMING K9K1208Q0C PDF