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    K6T1008 Price and Stock

    ARCOTEK K6T1008V2E-TF70

    SRAM ASYNC SLOW 1MB 128KX8 3.3V
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    DigiKey K6T1008V2E-TF70 Tray 720
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    ARCOTEK K6T1008V2E-TF70T

    SRAM ASYNC SLOW 1MB 128KX8 3.3V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey K6T1008V2E-TF70T Reel 1,000
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    Others K6T1008C2C-TF70 SAMSUNG

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    Bristol Electronics K6T1008C2C-TF70 SAMSUNG 404
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    Samsung Semiconductor K6T1008V2E-GB

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    Bristol Electronics K6T1008V2E-GB 400
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    Samsung Semiconductor K6T1008C2CTF70

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    Bristol Electronics K6T1008C2CTF70 288
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    K6T1008 Datasheets (119)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K6T1008C2C Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-B Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-DB55 Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-DB70 Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-DL55 Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-DL70 Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-F Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-GB55 Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-GB70 Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-GF70 Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-GL55 Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-GL70 Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-GP70 Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-L Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-P Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-RB55 Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-RB70 Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-RF70 Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-TB55 Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF
    K6T1008C2C-TB70 Samsung Electronics 128K x 8-Bit Low Power CMOS Static RAM Original PDF

    K6T1008 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K6T1008C2E-GB70

    Abstract: K6T1008C2E-TB55
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product.


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    K6T1008C2E 128Kx8 0820F) K6T1008C2E-GB70 K6T1008C2E-TB55 PDF

    K6T1008C2E-GB70

    Abstract: K6T1008C2E-DL70 K6T1008C2E-TB55 k6t1008c2e 0855 K6T1008C2E-DB55 K6T1008C2E-DB70 K6T1008C2E-P K6T1008C2E-F k6t1008c2 K6T1008C2EGB70
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product.


    Original
    K6T1008C2E 128Kx8 0820R) K6T1008C2E-GB70 K6T1008C2E-DL70 K6T1008C2E-TB55 k6t1008c2e 0855 K6T1008C2E-DB55 K6T1008C2E-DB70 K6T1008C2E-P K6T1008C2E-F k6t1008c2 K6T1008C2EGB70 PDF

    K6T1008C2E

    Abstract: K6T1008C2E-DL70 K6T1008C2E-B K6T1008C2E-F K6T1008C2E-L K6T1008C2E-P k6t1008c2e-gb55 K6T1008C2E-GB70
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product.


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    K6T1008C2E 128Kx8 0820R) K6T1008C2E-DL70 K6T1008C2E-B K6T1008C2E-F K6T1008C2E-L K6T1008C2E-P k6t1008c2e-gb55 K6T1008C2E-GB70 PDF

    K6T1008U2C

    Abstract: K6T1008U2C-B K6T1008V2C K6T1008V2C-B KM68U1000C KM68V1000C
    Text: K6T1008V2C, K6T1008U2C Family CMOS SRAM Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 3, 1996 Preliminary 1.0 Finalize - Increased ISB, IDR Commercial part = 10µA


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    K6T1008V2C, K6T1008U2C KM68V1000C 70/85ns 70/100ns KM68U1000C 85/100ns 0820R) K6T1008U2C-B K6T1008V2C K6T1008V2C-B PDF

    K6T1008C2C-TB55

    Abstract: K6T1008C2C-GL70 K6T1008C2C K6T1008C2C-B K6T1008C2C-L K6T1008C2C-P K6T1008C2C-GP70 K6T1008C2C-DL70 K6T1008C2C-DB70 K6T1008C2
    Text: PRELIMINARY K6T1008C2C Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial draft November 22, 1995 Design target 0.1 First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA


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    K6T1008C2C 100ns 0820R) K6T1008C2C-TB55 K6T1008C2C-GL70 K6T1008C2C-B K6T1008C2C-L K6T1008C2C-P K6T1008C2C-GP70 K6T1008C2C-DL70 K6T1008C2C-DB70 K6T1008C2 PDF

    K6T1008V2E-TB70

    Abstract: k6t1008v2e K6T1008U2E K6T1008U2E-GF70 K6T1008U2E-YF10 K6T1008V2E-GF70 K6T1008V2E-GB70
    Text: K6T1008V2E, K6T1008U2E Family CMOS SRAM Document Title 128Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target September 9, 1998 Preliminary 1.0 Finalize - Change I CC1: 3 to 4mA April 13, 1998


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    K6T1008V2E, K6T1008U2E 128Kx8 K6T1008V2E-YB55, K6T1008V2E-YF55 0820R) K6T1008V2E-TB70 k6t1008v2e K6T1008U2E-GF70 K6T1008U2E-YF10 K6T1008V2E-GF70 K6T1008V2E-GB70 PDF

    K6T1008C2E-DB70

    Abstract: No abstract text available
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product.


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    K6T1008C2E 128Kx8 0820F) K6T1008C2E-DB70 PDF

    K6T1008C2E-GB70

    Abstract: K6T1008C2E-DL70 K6T1008C2E K6T1008C2E-DB55 K6T1008C2E-B K6T1008C2E-F K6T1008C2E-L K6T1008C2E-P K6T1008C2ETB70 K6T1008C2E-DB70
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product.


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    K6T1008C2E 128Kx8 th010 0820R) K6T1008C2E-GB70 K6T1008C2E-DL70 K6T1008C2E-DB55 K6T1008C2E-B K6T1008C2E-F K6T1008C2E-L K6T1008C2E-P K6T1008C2ETB70 K6T1008C2E-DB70 PDF

    K6T1008V2E

    Abstract: K6T1008V2E-TB70 K6T1008U2E K6T1008V2E-GB70 K6T1008U2E-YF10 K6T1008V2E-TF70 K6T1008V2E-TB10 K6T1008 K6T1008V2E-GF70 K6T1008U2E-B
    Text: K6T1008V2E, K6T1008U2E Family CMOS SRAM Document Title 128Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target September 9, 1998 Preliminary 1.0 Finalize - Change I CC1 : 3 to 4mA April 13, 1998


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    K6T1008V2E, K6T1008U2E 128Kx8 K6T1008V2E K6T1008V2E-TB70 K6T1008V2E-GB70 K6T1008U2E-YF10 K6T1008V2E-TF70 K6T1008V2E-TB10 K6T1008 K6T1008V2E-GF70 K6T1008U2E-B PDF

    K6T1008S2E-TF10

    Abstract: No abstract text available
    Text: K6T1008S2E Family CMOS SRAM Document Title 128Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft September 10, 1998 Preliminary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and


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    K6T1008S2E 128Kx8 K6T1008S2E-TF10 PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


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    BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    lh62256

    Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
    Text: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s


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    HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 HM628128 K6T1008C2 lh62256 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


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    BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B PDF

    ds1307 interface to pic microcontroller

    Abstract: atmega128 SPI code example ds1307 avr rtc ds1307 RS-485 to usart pic interface circuit diode J226 ds1307 pic J226 SMD PIC rtc ds1307 ad7191
    Text: Ethernet Minimodule User’s Manual REV 0.9 , lu ard ST Sta rve a , e o Ev B VR ers b S l d n io 1, A trol We mo t a ‘5 n d ni ri o e r c fo cro dd s M the e s d e i m mb oar rs, peC E B e S PI its ng roll gh r K pi nt Hi fo r y o rte tot roc FID ers s o c


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    RS-232 ST232 MMnet103 ds1307 interface to pic microcontroller atmega128 SPI code example ds1307 avr rtc ds1307 RS-485 to usart pic interface circuit diode J226 ds1307 pic J226 SMD PIC rtc ds1307 ad7191 PDF

    TSOP44 Package

    Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
    Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments


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    PDF

    UM62256EM-70LL

    Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
    Text: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B


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    PD4218165 PD424260 PD431000A PD43256B PD43256B-B PD43256BGU-70LL PD43256BGW-70 PD441000L-B PD442000L-B UM62256EM-70LL UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723 PDF

    CYPRESS SAMSUNG CROSS REFERENCE

    Abstract: SRAM 64KX8 5V K6T080C1D sram cross reference SRAM SAMSUNG Cross Reference DIP SOP winbond W24256 V62C51864 WINBOND cross reference
    Text: Low Power & Normal SRAM Cross Reference Guide Part No. Density bits Org. Voltage Access Temp.1 Pins Time (ns) (bits) Package Company W2465,S 64K 8Kx8 5V 70 LL 28 *.DIP/S:SOP LL, LE 28 *.DIP/S:SOP CYPRESS UTRON IDT MOSEL CYPRESS ICSI(ISSI) UTRON BSI W24L257,S


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    W2465 W24L257 32Kx8 W24257AS W24257 W24256S CYPRESS SAMSUNG CROSS REFERENCE SRAM 64KX8 5V K6T080C1D sram cross reference SRAM SAMSUNG Cross Reference DIP SOP winbond W24256 V62C51864 WINBOND cross reference PDF

    62128 SRAM

    Abstract: k6t1008c2 K6T1008C2C-DB70 k6t1008c2c CY62128LL-70SI HY628100BLLG-55 HY628100BLG-55 cy62128ll-55sc K6T1008C2C-GL70 RAM 62128
    Text: Approved Manufacturers List for Web Parts Part Number: 100-0007 Rev ECO# A E11137 REVISION HISTORY Description of Change Date Apvd By Initial Release Approved Manufacturers: NOTE: In some cases, components under the same part number may originate from various manufacturers,


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    E11137 HY628100BLLG-55 62128 SRAM k6t1008c2 K6T1008C2C-DB70 k6t1008c2c CY62128LL-70SI HY628100BLLG-55 HY628100BLG-55 cy62128ll-55sc K6T1008C2C-GL70 RAM 62128 PDF

    LCD based digital alarm clock with digital thermometer

    Abstract: atmega128 485 code example JFM24011-0101T full duplex max485 atmega128 USART C code examples ATMEGA128 projects MAX485 SMD wireless weather monitoring USING MICROCONTROLLER avr lcd 2x16 K6T1008
    Text: Ethernet Minimodule User’s Manual REV 0.9 , lu ard ST Sta rve a , e o Ev B VR ers b S l d n io 1, A trol We mo t a ‘5 n d ni ri o e r c fo cro dd s M the e s d e i m mb oar rs, peC E B e S PI its ng roll gh r K pi nt Hi fo r y o rte tot roc FID ers s o c


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    74HC00 JFM24011-0101T 25Mhz MMnet101 LCD based digital alarm clock with digital thermometer atmega128 485 code example JFM24011-0101T full duplex max485 atmega128 USART C code examples ATMEGA128 projects MAX485 SMD wireless weather monitoring USING MICROCONTROLLER avr lcd 2x16 K6T1008 PDF

    um61256

    Abstract: um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245
    Text: Cross Reference Your Memory Provider part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D


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    PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245 PDF

    um61256

    Abstract: hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16
    Text: Cross Reference Your Memory Provider Part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B AM29F010


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    PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16 PDF

    um61256

    Abstract: PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620
    Text: Cross Reference Your Memory Supplier part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B


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    PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B A29F002 um61256 PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620 PDF

    CY62128

    Abstract: W24256 BSI winbond Cross Reference UT621024 CY6264 K6T0808C1D K6T0808V1D UT6264 W24257 W24258
    Text: Low-Power SRAM Cross Reference Guide 2 of 2 Density (bits) Org. (bits) 64K 8K*8 Company Part No. Operating Current mA (max.) (° C) Commercial Extended Industrial (0~70) (-20~85) (-40~85) Winbond W2465 UTRON UT6264 Cypress CY6264 100 W24256 60 Winbond 10 for LL


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    W2465 UT6264 CY6264 W24256 W24257 W24LH8 K6T0808C1D W24258 D-22083 CY62128 W24256 BSI winbond Cross Reference UT621024 CY6264 K6T0808C1D K6T0808V1D UT6264 W24257 W24258 PDF

    X7055

    Abstract: sram cross reference W24256 cy6264 cross UT621024 UT6264 CY6264 K6T0808C1D bs62lv1024 W24257
    Text: Low-Power SRAM Cross Reference Guide 1 of 2 Density (bits) Org. (bits) 64K 8K*8 Operating Temperature (° C) Part No. Operating Voltage (V) Winbond W2465 5 UTRON UT6264 5 Cypress CY6264 5 W24256 5V (4.5~5.5) X W24257 5V (4.5~5.5) X W24L257 3.15~ 5.5 X W24258


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    W2465 UT6264 CY6264 W24256 W24257 W24L257 W24258 W24LH8 K6T0808C1D K6T0808V1D X7055 sram cross reference W24256 cy6264 cross UT621024 UT6264 CY6264 K6T0808C1D bs62lv1024 W24257 PDF