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    K6F2008V2E Search Results

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    K6F2008V2E Price and Stock

    Samsung Semiconductor K6F2008V2E-LF70000

    SRAM - Async Single - 3.3V - 2Mbit (256K x 8) - 70ns - 32-Pin TSOP-I - Tray
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    Onlinecomponents.com K6F2008V2E-LF70000 17,860
    • 1 $6.52
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    • 100 $1.79
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    Samsung Semiconductor K6F2008V2E-YF70

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    Bristol Electronics K6F2008V2E-YF70 2,324
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    Quest Components K6F2008V2E-YF70 28
    • 1 $18.9
    • 10 $16.8
    • 100 $15.54
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    Samsung Semiconductor K6F2008V2E-YF70T00

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    Bristol Electronics K6F2008V2E-YF70T00 2,324
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    Samsung Semiconductor K6F2008V2E-YF70000

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    Bristol Electronics K6F2008V2E-YF70000 2,324
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    Samsung Electronics Co. Ltd K6F2008V2E-LF70

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    Ameya Holding Limited K6F2008V2E-LF70 1,655
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    K6F2008V2E Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K6F2008V2E Samsung Electronics 256K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F2008V2E Family Samsung Electronics 256K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet Original PDF
    K6F2008V2E-LF55 Samsung Electronics 256K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F2008V2E-LF70 Samsung Electronics 256K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F2008V2E-YF55 Samsung Electronics 256K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F2008V2E-YF70 Samsung Electronics 256K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF

    K6F2008V2E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K6F2008V2E-LF55

    Abstract: K6F2008V2E K6F2008V2E-LF70 K6F2008V2E-YF55 K6F2008V2E-YF70
    Text: CMOS SRAM K6F2008V2E Family Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 19 , 2001 Preliminary 1.0 Finalize September 27, 2001 Final 1.1 Revised


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    K6F2008V2E 256Kx8 32-TSOP1-0813 K6F2008V2E-LF55 K6F2008V2E-LF70 K6F2008V2E-YF55 K6F2008V2E-YF70 PDF

    K6F2008V2E-YF55

    Abstract: No abstract text available
    Text: CMOS SRAM K6F2008V2E Family Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 19 , 2001 Preliminary 1.0 Finalize September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


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    K6F2008V2E 256Kx8 K6F2008V2E-YF55 PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


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    BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


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    BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B PDF

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


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    BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 PDF

    HM628100

    Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
    Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA


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    Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006 PDF

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


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    BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN PDF