M470T6554BZ0-CD5
Abstract: DDR2 SODIMM SPD JEDEC DDR2-400 DDR2-533
Text: SERIAL PRESENCE DETECT M470T6554BZ0-CD5/CCC Organization :64M x 64 Composition :32M x 16 * 8ea Used component part # :K4T51163QB-ZCD5/CC # of rows in module:2 Row # of banks in component :4 banks Feature :30mm height & double sided component Refresh :8K/64ms
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M470T6554BZ0-CD5/CCC
K4T51163QB-ZCD5/CC
8K/64ms
DDR2-533
DDR2-400
128bytes
M470T6554BZ0-CD5
DDR2 SODIMM SPD JEDEC
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M378T3354BZ3-CD5
Abstract: K4T51163QBZCD5 m378t335 DDR2-400 DDR2-533 DDR2-400C
Text: SERIAL PRESENCE DETECT M378T3354BZ3-CD5/CCC Organization :32M x 64 Composition :32M x 16 * 4ea Used component part # :K4T51163QB-ZCD5/CC # of rows in module:1 Row # of banks in component :4 banks Feature :30mm height & single sided component Refresh :8K/64ms
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M378T3354BZ3-CD5/CCC
K4T51163QB-ZCD5/CC
8K/64ms
DDR2-533
DDR2-400
128bytes
M378T3354BZ3-CD5
K4T51163QBZCD5
m378t335
DDR2-400C
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K4T51043QB-GCCC
Abstract: K4T51043QB-GCE6 K4T51043QB-GLE6
Text: Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 0.91 September 2003 Rev. 0.91 Sep. 2003 Page 1 of 38 Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM Contents 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing
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512Mb
K4T51043QB-GCCC
K4T51043QB-GCE6
K4T51043QB-GLE6
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M378T6553
Abstract: No abstract text available
Text: 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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256MB
512MB
240pin
64/72-bit
K4T51083QB
32Mbx16
32Mx64/x72
M378T6553
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K4T51163QB-ZCCC
Abstract: k4t51163qb-zcd5
Text: 512Mb B-die DDR2 SDRAM DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.4 February 2005 Page 1 of 29 Rev. 1.4 Feb. 2005 512Mb B-die DDR2 SDRAM DDR2 SDRAM Contents 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing
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512Mb
DDR2-533
DDR2-400
K4T51043QB-GCD5
K4T51043QB-GCCC
K4T51043QB-ZCD5
K4T51043QB-ZCCC
K4T51163QB-ZCCC
k4t51163qb-zcd5
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RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH
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BR-04-ALL-005
BR-04-ALL-004
RISC-Processor s3c2410
MR16R1624DF0-CM8
arm9 samsung s3c2440 architecture
chip 3351 dvd
sp0411n
K9W8G08U1M
sandisk micro SD Card 2GB
arm9 s3c2440
K9F1G08U0A
K6X8008C2B
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Untitled
Abstract: No abstract text available
Text: 512Mb B-die DDR2 SDRAM DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.2 January 2005 Page 1 of 29 Rev. 1.2 Jan. 2005 512Mb B-die DDR2 SDRAM DDR2 SDRAM Contents 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing
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512Mb
128Mx4
K4T51043QB-ZCD5
K4T51083QB-GCD5
64Mx8
K4T51083QB-ZCD5
K4T51163QB-GCD5
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DDR2 Mechanical Dimensions
Abstract: 1GB DDR2 4 banks 32MX16 samsung ddr2 240pin 1gb udimm DDR2-533 K4T51163QB M378T3354BG samsung 512mb ddr cl3 dimm 32MBX16
Text: 256MB, 512MB, 1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC sINFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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256MB,
512MB,
240pin
512Mb
64/72-bit
K4T51163QB
DDR2 Mechanical Dimensions
1GB DDR2 4 banks
32MX16
samsung ddr2 240pin 1gb
udimm
DDR2-533
K4T51163QB
M378T3354BG
samsung 512mb ddr cl3 dimm
32MBX16
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BA81-01580A
Abstract: BA81-01581A PA 66 GF 15 venice 6.2 BA41-00524A MIC2568 BA81 BA59-01318A WM3B2200BG BA41-00520A
Text: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 6. Expl oded Vi ew and PartLi st 6-1-1.Expl ode_Vi ew-Sorrento-Assy SAMSUNG X1 < 6 - 1 > Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 6. Expl oded Vi ew and PartLi st
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NP-X1-C000/SER
BA97-02388A
BA67-00280A
BA75-012SUB
44to5
AD-6019
API1AD02)
90TO2
SWB-4000D
BA81-01580A
BA81-01581A
PA 66 GF 15
venice 6.2
BA41-00524A
MIC2568
BA81
BA59-01318A
WM3B2200BG
BA41-00520A
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MMZ1608S121AT
Abstract: nc10 samsung 45-D2 Samsung ddr2 7SZ14 BA09-00009A INTEL945GMS SMD y8 samsung nc10 bios Socket AM2
Text: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D RIMINI CPU : INTEL YONAH-ULV
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945GMS
BA41-00680A
BA41-00683A
Pag614
TP18615
TP18616
TP18617
TP18618
TP18619
TP18620
MMZ1608S121AT
nc10 samsung
45-D2
Samsung ddr2
7SZ14
BA09-00009A
INTEL945GMS
SMD y8
samsung nc10 bios
Socket AM2
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DS493
Abstract: No abstract text available
Text: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 11. Mai n System PartLi st CODE DESCRI PTI ON REFERENCE EA 3920501 j ack-usb-4p-mnt4,JACK-USB;-,-,-,-,- J505 J2501 J2502 3 0401-000191 di ode,DI ODE-SWI TCHI NG;MMBD4148,75V,200MA,SOT-23,TP
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Untitled
Abstract: No abstract text available
Text: 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC Revision 1.1 June 2004 Rev. 1.1 Jun. 2004 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM Ordering Information
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256MB,
512MB,
200pin
512Mb
64bit
M470T3354BG
256MB
32Mx64
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Untitled
Abstract: No abstract text available
Text: 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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256MB,
512MB,
200pin
512Mb
64bit
64Mbx8
128Mx64
M470T2953BS
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Untitled
Abstract: No abstract text available
Text: 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC Revision 1.3 February 2005 Rev. 1.3 Feb. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM Ordering Information
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256MB,
512MB,
200pin
512Mb
64bit
M470T3354BG
M470T3354BZ0-LD5/CC
M470T6554BG
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SODIMM DDR2
Abstract: DDR2 SODIMM K4T5108 DDR2-400 DDR2-533 K4T51163QB M470T3354BG0
Text: 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM Ordering Information
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256MB,
512MB,
200pin
512Mb
64bit
M470T3354BG0-CD5/CC
256MB
32Mx64
SODIMM DDR2
DDR2 SODIMM
K4T5108
DDR2-400
DDR2-533
K4T51163QB
M470T3354BG0
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DDR2 SDRAM ECC
Abstract: 1GB DDR2 4 banks samsung m378 DDR2-667 K4T51163QB DDR2-533C
Text: 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered DIMM Ordering Information
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256MB
512MB
240pin
64/72-bit
M378T3354BG0-CE6/D5/CC
256MB
32Mx64
DDR2 SDRAM ECC
1GB DDR2 4 banks
samsung m378
DDR2-667
K4T51163QB
DDR2-533C
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AES2501
Abstract: ICS954305 TP960 C703 diode tp1332 VDD3310 TP950 33B3 diode DEBUG32 block diagram of intel 8254 chip
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE-R C B CPU : Chip Set :
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CONTROLLERP1311
TP1312
TP1313
TP1314
TP1251
TP1252
TP1253
TP1254
TP1255
TP1256
AES2501
ICS954305
TP960
C703 diode
tp1332
VDD3310
TP950
33B3 diode
DEBUG32
block diagram of intel 8254 chip
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PORON-HH48
Abstract: BA42-00163A BA42-00133A l565 SMD RA15 4P SOT323 HD3 94V-0 KUBNKM088A AUO b513 E802
Text: 10. Electrical Partlist Option SEC Code Main System Name Location BA44-00205A 60W_ADATOR LISHIN ADAPTOR BA46-04730A BIOS HDM-WXPP+F/W-EN G BIOS Spec. LF80539GF0282M,1.66GHz,64Bit,uFCPGA,478P,T R,Plastic,1.05V,31W, 0to+70C,2MB,32Bit M470T3354BG0,32Mx64Bit,SODIMM,200P,67.6x3
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BA31-00032A
BA39-00570A
BA39-00584A
BA41-00596A
BA42-00133A
BA42-00150A
BA43-00156A
BA44-00162A
BA44-00174A
BA44-00205A
PORON-HH48
BA42-00163A
l565
SMD RA15
4P SOT323
HD3 94V-0
KUBNKM088A
AUO b513
E802
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Untitled
Abstract: No abstract text available
Text: 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC Revision 1.1 June 2004 Rev. 1.1 Jun. 2004 256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered DIMM Ordering Information
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PDF
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256MB
512MB
240pin
64/72-bit
M378T3354BG
M378T6553BG
M378T2953BG
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Untitled
Abstract: No abstract text available
Text: 256MB,512MB,1GB Unbuffered DIMMs Preliminary DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC Revision 0.6 October 2003 Rev. 0.6 Oct. 2003 256MB,512MB,1GB Unbuffered DIMMs Preliminary DDR2 SDRAM Revision History
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256MB
512MB
240pin
64/72-bit
K4T51083QB-GC/L#
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k4t51163qb-gcd5
Abstract: DDR-533
Text: 512Mb B-die DDR2 SDRAM DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.1 June 2004 Rev. 1.1 Jun. 2004 Page 1 of 26 512Mb B-die DDR2 SDRAM DDR2 SDRAM Contents 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing
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512Mb
128Mx4
K4T51083QB-GCE6
64Mx8
32Mx16
K4T51163QB-ZCD5
K4T51163QB-ZCCC
k4t51163qb-gcd5
DDR-533
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LA-2481
Abstract: SIL1362 Llano CPU sld9630tt EDX20 compal TOSHIBA M9 CH7308 Llano C33056
Text: A B C D E MODEL NAME : EDX20 PCB NO : LA-2481 1 PVT 1 COMPAL CONFIDENTIAL 2 2 EDX20 Schematics Document 2005-02-22 REV: 0.5 3 3 4 4 Compal Electronics, Inc. Title PROPRIETARY NOTE A B THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL AND
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EDX20
LA-2481
Febru7G110ZR.
FDS4935A
LA-2481
SIL1362
Llano CPU
sld9630tt
compal
TOSHIBA M9
CH7308
Llano
C33056
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ba41-01882a gbm
Abstract: ICH7 amt 82801 g SCHEMATIC DIAGRAM c946 001 B34 SAMSUNG ELECTRONICS BA41 MT16 H1 cpu Yonah-2M EMC6N300 TP14995
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D TORINO PCB thickness: 1mm C
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945GM
BA41-00602A/3A
BA59-01851A
A3212ELH/HED55XXU12
100nF
BA59-01851A
ba41-01882a gbm
ICH7 amt
82801 g SCHEMATIC DIAGRAM
c946
001 B34
SAMSUNG ELECTRONICS BA41
MT16 H1
cpu Yonah-2M
EMC6N300
TP14995
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K4T51163QB-GCCC
Abstract: K4T51043QB-GCCC K4T51083QB-GCCC DDR2 SDRAM component data sheet DDR2-400 DDR2-533 DDR2-667 K4T51043QB-GCD5 K4T51083QB-GCD5 K4T51163QB-GCD5
Text: 512Mb B-die DDR2 SDRAM DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.0 January 2004 Rev. 1.0 Jan. 2004 Page 1 of 26 512Mb B-die DDR2 SDRAM DDR2 SDRAM Contents 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing
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512Mb
DDR2-667
DDR2-533
DDR2-400
128Mx4
K4T51043QB-GCD5
K4T51043QB-GCCC
K4T51163QB-GCCC
K4T51043QB-GCCC
K4T51083QB-GCCC
DDR2 SDRAM component data sheet
K4T51043QB-GCD5
K4T51083QB-GCD5
K4T51163QB-GCD5
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