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    K4S640432E Price and Stock

    Samsung Semiconductor K4S640432E-TC1H

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    Bristol Electronics K4S640432E-TC1H 5
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    Samsung Semiconductor K4S640432ETC75

    64MBIT SDRAM 4M X 4BIT X 4 BANKS LVTTL SYNCHRONOUS DRAM Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54
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    ComSIT USA K4S640432ETC75 80
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    K4S640432E Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S640432E Samsung Electronics 4M x 4-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S640432E-L1H Samsung Electronics 4M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S640432E-L1L Samsung Electronics 4M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S640432E-L75 Samsung Electronics 4M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S640432E-TC Samsung Electronics 4M x 4-Bit x 4 Banks Synchronous DRAM Original PDF

    K4S640432E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: K4S640432E CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Oct. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Oct. 2000 K4S640432E CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S640432E 64Mbit A10/AP

    Untitled

    Abstract: No abstract text available
    Text: K4S640432E CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S640432E CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S640432E 64Mbit 64active A10/AP

    PC133 registered reference design

    Abstract: No abstract text available
    Text: M390S1620ET1 PC133 Registered DIMM Revision History Revision 0 Dec. 2000 • PC133 first published REV. 0.0 Dec. 2000 PC133 Registered DIMM M390S1620ET1 M390S1620ET1 SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD


    Original     		PDF M390S1620ET1 PC133 M390S1620ET1 16Mx72 16Mx4, PC133 registered reference design

    CDC2509

    Abstract: samsung capacitance Manufacturing location ALVC162835 CDCF2509 M377S1620ET3 samsung capacitance year code
    Text: M377S1620ET3 PC100 Registered DIMM Revision History Revision 0.1 January 15, 2001 - Drive IC is changed from ALVC162835 to ALVCF162835 and PLL is also changed from CDC2509 to CDCF2509. Revision 0.2 (Sep., 2001) • Changed the Notes in Operating AC Parameter.


    Original     		PDF M377S1620ET3 PC100 ALVC162835 ALVCF162835 CDC2509 CDCF2509. 100MHz samsung capacitance Manufacturing location CDCF2509 M377S1620ET3 samsung capacitance year code

    K4S640432E

    Abstract: PC133 registered reference design
    Text: PC133 Registered DIMM M390S1620ET1 M390S1620ET1 SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S1620ET1 is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC133 M390S1620ET1 M390S1620ET1 16Mx72 16Mx4, 16Mx4 400mil 18-bits K4S640432E PC133 registered reference design