Untitled
Abstract: No abstract text available
Text: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,
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K4S510832B
512Mbit
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RA12
Abstract: No abstract text available
Text: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations
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K4S510832B
512Mbit
A10/AP
RA12
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Untitled
Abstract: No abstract text available
Text: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as
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K4S510832B
512Mbit
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54-TSOP
Abstract: K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A
Text: 256MB, 512MB, 1GB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004
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256MB,
512MB,
168pin
512Mb
62/72-bit
54-TSOP
K4S511632B
M366S2953BTS-C7A
M366S3354BTS-C7A
M366S6553BTS-C7A
M374S2953BTS-C7A
M374S6553BTS-C7A
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH
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BR-04-ALL-005
BR-04-ALL-004
RISC-Processor s3c2410
MR16R1624DF0-CM8
arm9 samsung s3c2440 architecture
chip 3351 dvd
sp0411n
K9W8G08U1M
sandisk micro SD Card 2GB
arm9 s3c2440
K9F1G08U0A
K6X8008C2B
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b1a12
Abstract: K4S1G0632B PC133 SDRAM registered DIMM 512MB samsung M390S2950BTU-C7A M390S2953BT1-C7A M390S5658BT1-C7A M390S5658BTU-C7A M390S6553BT1-C7A M390S6553BTU-C7A K4S510832
Text: 512MB, 1GB, 2GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 512Mb B-die with 72-bit ECC Revision 1.0 January 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 January 2004
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512MB,
168pin
512Mb
72-bit
M390S6553BT1-C7A
512MB
b1a12
K4S1G0632B
PC133 SDRAM registered DIMM 512MB samsung
M390S2950BTU-C7A
M390S2953BT1-C7A
M390S5658BT1-C7A
M390S5658BTU-C7A
M390S6553BT1-C7A
M390S6553BTU-C7A
K4S510832
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M464S6453BK0-L1H
Abstract: No abstract text available
Text: M464S6453BK0 PC100/PC133 512MB SODIMM Revision History Revision 0.0 Nov. 2000 Revision 0.1 (Jan. 2001) • Correted column address information in PIN CONFIGURATION DESCRIPTION. C ’ A11’is deleted • Defined the input capacitance in CAPACITANCE. • Redefined the ICC* in DC CHARACTERISTICS.
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M464S6453BK0
PC100/PC133
512MB
M464S6453BK0
64Mx64
64Mx8,
64Mx8
M464S6453BK0-L1H
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Samsung 16M SDRAM B-die
Abstract: K4S510432B-TC K4S511632B
Text: SDRAM 512Mb B-die x4, x8, x16 CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.0 July, 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 July, 2003 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM Revision History
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512Mb
16Bit
A10/AP
Samsung 16M SDRAM B-die
K4S510432B-TC
K4S511632B
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K4S511632B-UC75
Abstract: K4S511632B-UL75 K4S511632B K4S510432B-UC
Text: CMOS SDRAM SDRAM 512Mb B-die x4, x8, x16 512Mb B-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.1 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Revision. 1.1 August 2004
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512Mb
16Bit
A10/AP
K4S511632B-UC75
K4S511632B-UL75
K4S511632B
K4S510432B-UC
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K4S511632B
Abstract: K4S510432B-TC
Text: SDRAM 512Mb B-die x4, x8, x16 CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM
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512Mb
16Bit
A10/AP
K4S511632B
K4S510432B-TC
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M464S6453BK0
Abstract: M464S6453BK0-L1H M464S6453BK0-L1L M464S6453BK0-L75
Text: M464S6453BK0 PC100/PC133 512MB SODIMM Revision History Revision 0.0 Nov. 2000 Revision 0.1 (Jan. 2001) • Correted column address information in PIN CONFIGURATION DESCRIPTION. C ’ A11’is deleted • Defined the input capacitance in CAPACITANCE. • Redefined the ICC* in DC CHARACTERISTICS.
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Original
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PDF
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M464S6453BK0
PC100/PC133
512MB
M464S6453BK0
64Mx64
64Mx8,
M464S6453BK0-L1H
M464S6453BK0-L1L
M464S6453BK0-L75
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