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    K4S280832B Search Results

    K4S280832B Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S280832B Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TC10 Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TC1H Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TC1L Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TC75 Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TC80 Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TCL10 Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TCL1H Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TCL1L Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TCL75 Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TCL80 Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TL10 Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TL1H Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TL1L Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TL75 Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF
    K4S280832B-TL80 Samsung Electronics 4M x 8-Bit x 4 Banks Sychronous DRAM Original PDF

    K4S280832B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: shrink-TSOP K4S280832B-N CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The K4S280832B-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8


    Original     		PDF K4S280832B-N K4S280832B-N 54-sTSOP

    K4S280432B-TC75

    Abstract: 18EA M390S1723BT1-C75 16MX8 32MX72 K4S280832B-TC75 M390S3320BT1-C75
    Text: SERIAL PRESENCE DETECT PC133 Registered DIMM PC133 Registered SDRAM DIMM 168pin Type SPD Specification REV. 0 Sep. 1999 REV. 0 Sep. 1999 SERIAL PRESENCE DETECT PC133 Registered DIMM M390S1723BT1-C75 •Organization : 16MX72 •Composition : 16MX8 * 9ea •Used component part # : K4S280832B-TC75


    Original     		PDF PC133 168pin) M390S1723BT1-C75 16MX72 16MX8 K4S280832B-TC75 4K/64ms 128bytes K4S280432B-TC75 18EA M390S1723BT1-C75 16MX8 32MX72 K4S280832B-TC75 M390S3320BT1-C75

    K4S280832B

    Abstract: No abstract text available
    Text: K4S280832B CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280832B CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S280832B 128Mbit K4S280832B A10/AP

    K4S280832B

    Abstract: No abstract text available
    Text: K4S280832B CMOS SDRAM PIN CONFIGURATION Top view VDD DQ0 VDDQ N.C DQ1 VSSQ N.C DQ2 VDDQ N.C DQ3 VSSQ N.C VDD N.C WE CAS RAS CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47


    Original     		PDF K4S280832B A10/AP 54Pin 400mil 875mil) A10/AP K4S280832B

    K4S280832B

    Abstract: No abstract text available
    Text: Data Sheet Part No. ISSD32M8STC Irvine Sensors Corporation Microelectronics Products Division 256 Mbit 32M x 8 Synchronous DRAM Memory Stack Features: q Low Profile: same PCB footprint as a


    Original     		PDF ISSD32M8STC K4S280832B

    M366S3323BT0-C1H

    Abstract: M366S3323BT0-C1L M366S3323BT0-C80
    Text: PC100 Unbuffered DIMM M366S3323BT0 M366S3323BT0 SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S3323BT0 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC100 M366S3323BT0 M366S3323BT0 32Mx64 16Mx8, 400mil 168-pin M366S3323BT0-C1H M366S3323BT0-C1L M366S3323BT0-C80

    M374S3323BT0-C1H

    Abstract: M374S3323BT0-C80
    Text: M374S3323BT0 PC100 Unbuffered DIMM M374S3323BT0 SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S3323BT0 is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M374S3323BT0 PC100 M374S3323BT0 32Mx72 16Mx8, 400mil 168-pin M374S3323BT0-C1H M374S3323BT0-C80

    k4s2808

    Abstract: M374S1723BTS M374S1723BTS-G1H M374S1723BTS-G1L M374S1723BTS-G80 1h1080
    Text: M374S1723BTS PC100 Unbuffered DIMM M374S1723BTS SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1723BTS is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M374S1723BTS PC100 M374S1723BTS 16Mx72 16Mx8, 400mil 168-pin k4s2808 M374S1723BTS-G1H M374S1723BTS-G1L M374S1723BTS-G80 1h1080

    Untitled

    Abstract: No abstract text available
    Text: Shrink-TSOP 144pin SDRAM SODIMM M464S3323BN0 M464S3323BN0 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on sTSOP2 16Mx8, 4Banks, 4K Refresh, 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S3323BN0 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M464S3323BN0 M464S3323BN0 32Mx64 16Mx8, 144-pin 144pin

    M366S0924CTS-C7A

    Abstract: M366S1723CTS-C7A K4S640832D-TC75 M366S0823DTS-C7A M374S0823DTS-C7A K4S281632B-TC75
    Text: PC133 Unbuffered DIMM SERIAL PRESENCE DETECT PC133 Single Sided Unbuffered SDRAM DIMM 168pin SPD Specification REV. 0 March. 2000 REV. 0 March. 2000 PC133 Unbuffered DIMM SERIAL PRESENCE DETECT M366S0424DTS-C7A(Intel SPD 1.2B ver. base) • Organization : 4Mx64


    Original     		PDF PC133 168pin) M366S0424DTS-C7A 4Mx64 4Mx16 K4S641632D-TC75 000mil 4K/64ms M366S0924CTS-C7A M366S1723CTS-C7A K4S640832D-TC75 M366S0823DTS-C7A M374S0823DTS-C7A K4S281632B-TC75

    M374S1723BTS

    Abstract: No abstract text available
    Text: M374S1723BTS PC133 Unbuffered DIMM Revision History Revision 0.0 Oct., 1999 • PC133 first published. REV. 0 Oct. 1999 M374S1723BTS PC133 Unbuffered DIMM M374S1723BTS SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF M374S1723BTS PC133 M374S1723BTS 16Mx72 16Mx8,

    Untitled

    Abstract: No abstract text available
    Text: M466S1723BT2 PC66 SODIMM M466S1723BT2 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M466S1723BT2 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M466S1723BT2 M466S1723BT2 16Mx64 16Mx8, 400mil 144-pin

    K4S280832B

    Abstract: No abstract text available
    Text: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 4Layer SPD Specification(128Mb B-die base) Rev. 0.0 August 1999 Rev 0.0 Aug. 1999 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0924BTS-C80/C1H/C1L • Organization : 8Mx64 • Composition : 8Mx16 *4


    Original     		PDF PC100 168pin) 128Mb M366S0924BTS-C80/C1H/C1L 8Mx64 8Mx16 K4S281632B-TC80/C1H/C1L 000mil K4S280832B

    K4S280832B-TC1H

    Abstract: 32MX72 16MX8 K4S280832 intel date code format
    Text: PC100 Registered DIMM SERIAL PRESENCE DETECT PC100 Registered DIMM 168pin Intel Type Rev1.2 SPD Specification(128Mb B-die base) Rev. 0.0 August 1999 Rev. 0.0 Aug. 1999 PC100 Registered DIMM SERIAL PRESENCE DETECT M377S1723BT3-C1H/C1L (1.2ver) • Organization : 16MX72


    Original     		PDF PC100 168pin) 128Mb M377S1723BT3-C1H/C1L 16MX72 16MX8 K4S280832B-TC1H/C1L 4K/64ms K4S280832B-TC1H 32MX72 16MX8 K4S280832 intel date code format

    CDC2509

    Abstract: No abstract text available
    Text: PC100 Registered DIMM M377S1723BT3 M377S1723BT3 SDRAM DIMM Intel 1.2 ver Base 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S1723BT3 is a 16M bit x 72 Synchronous


    Original     		PDF PC100 M377S1723BT3 M377S1723BT3 16Mx72 16Mx8, 16Mx8 400mil 18-bits CDC2509

    CDC2509

    Abstract: M377S3323BT0-C1H M377S3323BT0-C1L B1A11
    Text: PC100 Registered DIMM M377S3323BT0 M377S3323BT0 SDRAM DIMM Intel 1.2 ver Base 32Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S3323BT0 is a 32M bit x 72 Synchronous


    Original     		PDF PC100 M377S3323BT0 M377S3323BT0 32Mx72 16Mx8, 16Mx8 400mil 18-bits CDC2509 M377S3323BT0-C1H M377S3323BT0-C1L B1A11

    K4S281632B-TC75

    Abstract: K4S640832D-TC75 M366S1623DT0-C7A K4S280832A-TC75
    Text: PC133 Unbuffered DIMM SERIAL PRESENCE DETECT PC133 Double Sided Unbuffered SDRAM DIMM 168pin SPD Specification REV. 0 March. 2000 REV. 0 March. 2000 PC133 Unbuffered DIMM SERIAL PRESENCE DETECT M366S0824DT0-C7A(Intel SPD 1.2B ver. base) • Organization : 8Mx64


    Original     		PDF PC133 168pin) M366S0824DT0-C7A 8Mx64 4Mx16 K4S641632D-TC75 375mil 4K/64ms K4S281632B-TC75 K4S640832D-TC75 M366S1623DT0-C7A K4S280832A-TC75

    M390S1723BT1-C75

    Abstract: M390S1723BT1 PC133 registered reference design
    Text: M390S1723BT1 PC133 Registered DIMM Revision History Revision 0.0 Sep. 1999 • PC133 first published REV. 0 Sep. 1999 M390S1723BT1 PC133 Registered DIMM M390S1723BT1 SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD


    Original     		PDF M390S1723BT1 PC133 M390S1723BT1 16Mx72 16Mx8, M390S1723BT1-C75 PC133 registered reference design

    M374S3323BT0-C75

    Abstract: No abstract text available
    Text: M374S3323BT0 PC133 Unbuffered DIMM Revision History Revision 0.0 Oct. 1999 • PC133 first published. REV. 0.0 Oct. 1999 M374S3323BT0 PC133 Unbuffered DIMM M374S3323BT0 SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF M374S3323BT0 PC133 M374S3323BT0 32Mx72 16Mx8, M374S3323BT0-C75

    M366S3323BT0-C75

    Abstract: No abstract text available
    Text: M366S3323BT0 PC133 Unbuffered DIMM Revision History Revision 0.0 Oct. 1999 • PC133 first published. REV. 0.0 Oct. 1999 M366S3323BT0 PC133 Unbuffered DIMM M366S3323BT0 SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF M366S3323BT0 PC133 M366S3323BT0 32Mx64 16Mx8, M366S3323BT0-C75

    K4S280832B-TL10

    Abstract: K4S281632B-TL10 M466S0924BT0-L10 M466S1723BT2-L10 M466S1723BT3-L10 M466S1724BT2-L10
    Text: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (128Mb B-die base) Rev. 0.0 August 1999 Rev 0.0 Aug. 1999 SERIAL PRESENCE DETECT PC66 SODIMM M466S0924BT0-L10, C10 • Organization : 8Mx64 • Composition : 8Mx16*4 • Used component part # : K4S281632B-TL10, C10


    Original     		PDF 144pin) 128Mb M466S0924BT0-L10, 8Mx64 8Mx16 K4S281632B-TL10, 000mil 4K/64ms 128bytes 256bytes K4S280832B-TL10 K4S281632B-TL10 M466S0924BT0-L10 M466S1723BT2-L10 M466S1723BT3-L10 M466S1724BT2-L10

    M366S1723BTS

    Abstract: M366S1723BTS-C1H M366S1723BTS-C1L
    Text: PC100 Unbuffered DIMM M366S1723BTS M366S1723BTS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1723BTS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC100 M366S1723BTS M366S1723BTS 16Mx64 16Mx8, 400mil 168-pin M366S1723BTS-C1H M366S1723BTS-C1L

    K4S280832C-TC75

    Abstract: M390S1723CTU-C1H M390S1723CTU-C1L M390S1723CTU-C75 PC133 registered reference design
    Text: M390S1723CTU PC133/PC100 Registered DIMM Revision History Revision 0.1 Feb. 14, 2001 - Eliminate "Preliminary" Rev. 0.1 Feb. 2001 M390S1723CTU PC133/PC100 Registered DIMM M390S1723CTU SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD


    Original     		PDF M390S1723CTU PC133/PC100 M390S1723CTU 16Mx72 16Mx8, 16Mx8 K4S280832C-TC75 M390S1723CTU-C1H M390S1723CTU-C1L M390S1723CTU-C75 PC133 registered reference design

    M466S1723BT3-L10

    Abstract: No abstract text available
    Text: M466S1723BT3 PC66 SODIMM M466S1723BT3 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M466S1723BT3 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M466S1723BT3 M466S1723BT3 16Mx64 16Mx8, 400mil 144-pin M466S1723BT3-L10