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    18EA Search Results

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    R5F1018EALA#U0 Renesas Electronics Corporation Low Power, High Function Microcontrollers for General Purpose Applications Visit Renesas Electronics Corporation
    R7F701318EAFP Renesas Electronics Corporation High-end Automotive Microcomputers for Chassis System Visit Renesas Electronics Corporation
    R5F1018EALA#W0 Renesas Electronics Corporation Low Power, High Function Microcontrollers for General Purpose Applications Visit Renesas Electronics Corporation
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    18EA Price and Stock

    Maxim Integrated Products MAX3218EAP-T

    IC TRANSCEIVER FULL 2/2 20SSOP
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    DigiKey MAX3218EAP-T Cut Tape 5,075 1
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    MAX3218EAP-T Digi-Reel 5,075 1
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    Maxim Integrated Products MAX3218EAP-

    IC TRANSCEIVER FULL 2/2 20SSOP
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    DigiKey MAX3218EAP- Tube 4,125 1
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    Tai-Saw Technology Co Ltd TZ1618EABA43

    26/10/9/2.0X1.6
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    DigiKey TZ1618EABA43 Digi-Reel 3,000 1
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    TZ1618EABA43 Cut Tape 3,000 1
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    TZ1618EABA43 Reel 3,000 3,000
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    Maxim Integrated Products MAX6818EAP-T

    IC SWITCH DEBOUNCER 20SSOP
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    DigiKey MAX6818EAP-T Cut Tape 2,898 1
    • 1 $11.81
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    MAX6818EAP-T Digi-Reel 2,898 1
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    Win Source Electronics MAX6818EAP-T 23,253
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    NKK Switches M2018EA1G01

    SWITCH TOGGLE SPDT 0.4VA 28V
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    DigiKey M2018EA1G01 Box 806 1
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    TTI M2018EA1G01 Bulk 50 1
    • 1 $10.02
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    Powell Electronics M2018EA1G01 28 1
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    18EA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DDR SDRAM

    Abstract: DDR200 M383L5628MT1-CA0 SDRAM 128M SAMSUNG
    Text: SERIAL PRESENCE DETECT M383L5628MT1-CA0 Organization :256M x 72 Composition :128M x 4 *18ea *2 Used component part # :K4H1G0638M-TCA0 # of rows in module:2 Rows # of banks in component :4 banks Feature :1700ml height & double sided component Refresh :8K/64ms


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    M383L5628MT1-CA0 K4H1G0638M-TCA0 1700ml 8K/64ms DDR200 128bytes DDR SDRAM M383L5628MT1-CA0 SDRAM 128M SAMSUNG PDF

    DDR266

    Abstract: DDR333 42H33H
    Text: SERIAL PRESENCE DETECT M381L6423ETM-CB0/CA2/CAA/CB3 Organization :64M x 72 Composition :32M x 8 * 18ea Used component part # :K4H560838E-TCB0/A2/AA/B3 # of rows in module:2 Rows # of banks in component :4 banks Feature :1250mil height & double sided Refresh :8K/64ms


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    M381L6423ETM-CB0/CA2/CAA/CB3 K4H560838E-TCB0/A2/AA/B3 1250mil 8K/64ms DDR266 DDR333 128bytes 42H33H PDF

    M393T2950CZ3-CD5

    Abstract: K4T51043QC-ZCD5 DDR2-400 DDR2-533
    Text: SERIAL PRESENCE DETECT M393T2950CZ3-CD5/CCC Organization :128M x 72 Composition :128M x 4 * 18ea Used component part # :K4T51043QC-ZCD5/CC # of rows in module:1 Row # of banks in component :4 banks Feature :30mm height & double sided component Refresh :8K/64ms


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    M393T2950CZ3-CD5/CCC K4T51043QC-ZCD5/CC 8K/64ms DDR2-533 DDR2-400 128bytes M393T2950CZ3-CD5 K4T51043QC-ZCD5 PDF

    M312L6420ETS-CB0

    Abstract: K4H560438E-TCB0 DDR266 DDR333
    Text: SERIAL PRESENCE DETECT M312L6420ETS-CB0/CA2/CAA/CB3 Organization :64M x 72 Composition :64M x 4 * 18ea Used component part # :K4H560438E-TCB0/A2/AA/B3 # of rows in module:1 Row # of banks in component :K4H560438E-TCB0/A2/AA/B3 Feature :1200mil height & double sided


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    M312L6420ETS-CB0/CA2/CAA/CB3 K4H560438E-TCB0/A2/AA/B3 1200mil 8K/64ms DDR266 DDR333 128bytes M312L6420ETS-CB0 K4H560438E-TCB0 PDF

    K4H510438D-ZCB3

    Abstract: DDR333 DDR400 K4H510438 cb3 19
    Text: SERIAL PRESENCE DETECT M312L2920DZ3-CB3/CCC Organization :128M x 72 Composition :128M x 4 * 18ea Used component part # :K4H510438D-ZCB3/CC # of rows in module:1 Rows # of banks in component :4 banks Feature :1200mil height & double sided Refresh :8K/64ms Bin Sort : B3 DDR333@CL=2.5 , CC(DDR400@CL=3)


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    M312L2920DZ3-CB3/CCC K4H510438D-ZCB3/CC 1200mil 8K/64ms DDR333 DDR400 128bytes K4H510438D-ZCB3 K4H510438 cb3 19 PDF

    SSTE32882

    Abstract: samsung dimm DDR3 SPD HCH9 CF804 LVDDR3 K4B1G0846E samsung ddr3 RC10 RC11 RC12
    Text: SERIAL PRESENCE DETECT M393B5673EH1-CF704/CF804/CH904/CK004 Organization : 256M x 72 Composition : 128M x 8 * 18ea Used component part # : K4B1G0846E-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component


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    M393B5673EH1-CF704/CF804/CH904/CK004 K4B1G0846E-HCF7/HCF8/HCH9/HCK0 8K/64ms CF704 SSTE32882 samsung dimm DDR3 SPD HCH9 CF804 LVDDR3 K4B1G0846E samsung ddr3 RC10 RC11 RC12 PDF

    DDR2-667

    Abstract: K4T56083QF-ZCE6 M391T6453FZ0-CE6 4350H
    Text: SERIAL PRESENCE DETECT M391T6453FZ0-CE6 Organization :64M x 72 Composition :32M x 8 * 18ea Used component part # :K4T56083QF-ZCE6 # of rows in module:2 Row # of banks in component :4 banks Feature :30mm height & double sided component Refresh :8K/64ms Bin Sort : E6 DDR2-667@CL=5


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    M391T6453FZ0-CE6 K4T56083QF-ZCE6 8K/64ms DDR2-667 128bytes K4T56083QF-ZCE6 M391T6453FZ0-CE6 4350H PDF

    inphi

    Abstract: samsung dimm DDR3 SPD DDR3 DIMM SPD JEDEC samsung DDR3 SDRAM 2GB ddr3 spd samsung samsung ddr3 RC10 RC11 RC12 K4B2G0446B-HCF7
    Text: SERIAL PRESENCE DETECT M393B5270BH1-CF701/CF801/CH901/CK001 Organization : 512M x 72 Composition : 512M x 4 * 18ea Used component part # : K4B2G0446B-HCF7/HCF8/HCH9/HCK0 # of rows in module : 1 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component


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    M393B5270BH1-CF701/CF801/CH901/CK001 K4B2G0446B-HCF7/HCF8/HCH9/HCK0 8K/64ms GS-04 CF701 CF801 CH901 CF701 CF801 inphi samsung dimm DDR3 SPD DDR3 DIMM SPD JEDEC samsung DDR3 SDRAM 2GB ddr3 spd samsung samsung ddr3 RC10 RC11 RC12 K4B2G0446B-HCF7 PDF

    samsung dimm DDR3 SPD

    Abstract: SSTE32882 inphi samsung ddr3 RC10 RC11 RC12 HCH9 ddr3 spd samsung inphi* rcd
    Text: SERIAL PRESENCE DETECT M393B5673EH1-CF701/CF801/CH901/CK001 Organization : 256M x 72 Composition : 128M x 8 * 18ea Used component part # : K4B1G0846E-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component


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    M393B5673EH1-CF701/CF801/CH901/CK001 K4B1G0846E-HCF7/HCF8/HCH9/HCK0 8K/64ms GS04-B2 CF701 VDD36 samsung dimm DDR3 SPD SSTE32882 inphi samsung ddr3 RC10 RC11 RC12 HCH9 ddr3 spd samsung inphi* rcd PDF

    Untitled

    Abstract: No abstract text available
    Text: LED Cluster KODENSHI KSL-2840MLOW-S This specification is applied to 40-type solid-state lamp staring-sample assembled by high-bright LEDs-RED 10EA, Y-GREEN LED 18EA. This product is for the part of ourdoor LED bill-board. FEATURES •Display dot-size : 40mm


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    KSL-2840MLOW-S 40-type PDF

    M312L2920BG0-CCC

    Abstract: M312L2920BG0 DDR266 DDR333 DDR400
    Text: SERIAL PRESENCE DETECT M312L2920BG0-CCC Organization :128M x 72 Composition :128M x 4 * 18ea Used component part # :K4H510438B-GCB0/A2/AA/B3/C4/CC # of rows in module:1 Rows # of banks in component :4 banks Feature :1,125mil height & double sided Refresh :8K/64ms


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    M312L2920BG0-CCC K4H510438B-GCB0/A2/AA/B3/C4/CC 125mil 8K/64ms DDR266 DDR333 DDR400 M312L2920BG0-CCC M312L2920BG0 PDF

    DDR2-400

    Abstract: DDR2-533
    Text: SERIAL PRESENCE DETECT M391T6453FZ3-CD5/CCC Organization :64M x 72 Composition :32M x 8 * 18ea Used component part # :K4T56083QF-ZCD5/CC # of rows in module:2 Row # of banks in component :4 banks Feature :30mm height & double sided component Refresh :8K/64ms


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    M391T6453FZ3-CD5/CCC K4T56083QF-ZCD5/CC 8K/64ms DDR2-533 DDR2-400 128bytes PDF

    54-TSOP

    Abstract: K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A
    Text: 256MB, 512MB, 1GB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004


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    256MB, 512MB, 168pin 512Mb 62/72-bit 54-TSOP K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A PDF

    M366S0924ETS-C7A

    Abstract: M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A
    Text: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb E-die 62/72-bit Non ECC/ECC Revision 1.3 February. 2004 Rev. 1.3 February 2004 64MB, 128MB, 256MB Unbuffered DIMM SDRAM Revision History Revision 1.0 November., 2002


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    128MB, 256MB 168pin 128Mb 62/72-bit M366S0924ETS-C7A M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A PDF

    DDR400

    Abstract: K4H560838E M312L3223EG0-CCC M312L6420EG0-CCC
    Text: 256MB, 512MB, 1GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module DDR400 Module 60FBGA 184pin Registered Module based on 256Mb E-die (x4, x8) with 1,200mil Height Revision 1.1 August. 2003 Rev. 1.1 August. 2003 256MB, 512MB, 1GB Registered DIMM DDR SDRAM


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    256MB, 512MB, DDR400 60FBGA) 184pin 256Mb 200mil K4H560838E M312L3223EG0-CCC M312L6420EG0-CCC PDF

    K4H560838E

    Abstract: DDR333
    Text: 256MB, 512MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb E-die with 64/72-bit ECC/Non ECC Revision 1.1 August. 2003 Rev. 1.1 August. 2003 256MB, 512MB Unbuffered DIMM DDR SDRAM Revision History Revision 1.0 April, 2003


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    256MB, 512MB 184pin 256Mb 64/72-bit K4H560838E DDR333 PDF

    M390S2858DTU

    Abstract: M390S2858DTU-C1H M390S2858DTU-C1L M390S2858DTU-C7A M390S2858DTU-C7C 10D4L PC133 registered reference design
    Text: M390S2858DTU PC133/PC100 Low Profile Registered DIMM M390S2858DTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2858DTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2858DTU consists of eighteen CMOS Stacked


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    M390S2858DTU PC133/PC100 M390S2858DTU 128Mx72 128Mx4, 128Mx4 400mil 18-bits M390S2858DTU-C1H M390S2858DTU-C1L M390S2858DTU-C7A M390S2858DTU-C7C 10D4L PC133 registered reference design PDF

    dm 533

    Abstract: K4T5108 M393T5750BS0-CD5 DDR2-533
    Text: 512MB, 1GB, 2GB Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 DDR2 SDRAM 512MB, 1GB, 2GB Registered DIMMs DDR2 Registered DIMM Ordering Information


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    512MB, 240pin 512Mb 72-bit M393T6553BG0-CD5/CC 512MB 64Mx72 64Mx8 K4T51083QB) dm 533 K4T5108 M393T5750BS0-CD5 DDR2-533 PDF

    M368L6523DUS

    Abstract: L2923D
    Text: 256MB, 512MB, 1GB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


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    256MB, 512MB, 184pin 512Mb 64/72-bit 64Mx8 K4H510838D-U* M368L6523DUS L2923D PDF

    b1a12

    Abstract: M390S6450DTU-C7A M390S6450DTU M390S6450DTU-C1H M390S6450DTU-C1L M390S6450DTU-C7C PC133 registered reference design
    Text: M390S6450DTU PC133/PC100 Low Profile Registered DIMM M390S6450DTU SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S6450DTU is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S6450DTU consists of eighteen CMOS 64Mx4 bit


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    M390S6450DTU PC133/PC100 M390S6450DTU 64Mx72 64Mx4, 64Mx4 400mil 18bits b1a12 M390S6450DTU-C7A M390S6450DTU-C1H M390S6450DTU-C1L M390S6450DTU-C7C PC133 registered reference design PDF

    M390S6453DT1

    Abstract: M390S6453DT1-C7A M390S6453DT1-C7C PC133 registered reference design
    Text: PC133 Registered DIMM M390S6453DT1 M390S6453DT1 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S6453DT1 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original
    PC133 M390S6453DT1 M390S6453DT1 64Mx72 32Mx8, 32Mx8 400mil 18-bits M390S6453DT1-C7A M390S6453DT1-C7C PC133 registered reference design PDF

    K4T51083QC

    Abstract: Samsung 546
    Text: 512MB, 1GB, 2GB Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb C-die 72-bit ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original
    512MB, 240pin 512Mb 72-bit K4T51083QC Samsung 546 PDF

    b1a12

    Abstract: PC133 SDRAM registered DIMM 512MB samsung pc133 sdram 512mb ECC unbuffered K4S560832E M390S2858ET1-C7A M390S2858ETU-C7A M390S3253ET1-C7A M390S3253ETU-C7A M390S6450ET1-C7A M390S6450ETU-C7A
    Text: 256MB, 512MB, 1GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb E-die with 72-bit ECC Revision 1.4 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 May 2004


    Original
    256MB, 512MB, 168pin 256Mb 72-bit K4S510632E b1a12 PC133 SDRAM registered DIMM 512MB samsung pc133 sdram 512mb ECC unbuffered K4S560832E M390S2858ET1-C7A M390S2858ETU-C7A M390S3253ET1-C7A M390S3253ETU-C7A M390S6450ET1-C7A M390S6450ETU-C7A PDF

    Untitled

    Abstract: No abstract text available
    Text: ?yaròwra 82 53922 SILICON SENSORS’ INC j 5 3 ^ 5 B DODOHfib Ö [ T-41 - 2 1 : SILICON SENSÖRS, INC. v ^fi igtiway ,18East >>< JpodgeVJife, W ìs c Q n s fò '^ ^ ^ S f : Telephone: 608 -935-2707 . ^ TWX:91Ó-280-143Óv : ; I SILICON SENSORS SVAD 2 Gallium Aluminum Arsenide Light


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