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    K4S280432 Price and Stock

    Samsung Semiconductor K4S280432C-TC1L

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    Samsung Semiconductor K4S280432C-TC1L000

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    Samsung Semiconductor K4S280432B-TC1L

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    Samsung Semiconductor K4S280432E-TC75000

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    Samsung Semiconductor K4S280432D-TC1H

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    Quest Components K4S280432D-TC1H 27
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    K4S280432 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S280432A Samsung Electronics 128Mbit SDRAM 8M x 4-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S280432A-TC/L10 Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3). Original PDF
    K4S280432A-TC/L1H Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2). Original PDF
    K4S280432A-TC/L1L Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). Original PDF
    K4S280432A-TC/L75 Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 133 MHz (CL=3). Original PDF
    K4S280432A-TC/L80 Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz (CL=3). Original PDF
    K4S280432B Samsung Electronics 128Mbit SDRAM 8M x 4-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S280432B-TC/L10 Samsung Electronics 8M x 4-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3). Original PDF
    K4S280432B-TC/L1H Samsung Electronics 8M x 4-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2). Original PDF
    K4S280432B-TC/L1L Samsung Electronics 8M x 4-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). Original PDF
    K4S280432B-TC/L75 Samsung Electronics 8M x 4-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 133 MHz (CL=3). Original PDF
    K4S280432B-TC/L80 Samsung Electronics 8M x 4-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz (CL=3). Original PDF
    K4S280432C Samsung Electronics 128Mbit SDRAM 8M x 4-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S280432C-TC/L1H Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2). Original PDF
    K4S280432C-TC/L1L Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). Original PDF
    K4S280432C-TC/L75 Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 133 MHz (CL=3). Original PDF
    K4S280432D Samsung Electronics 128Mbit SDRAM 8M x 4-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S280432D-TB1H Samsung Electronics 128Mbit SDRAM Original PDF
    K4S280432E Samsung Electronics 128Mb E-die SDRAM Specification Original PDF
    K4S280432E-TC75 Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 133MHz Original PDF

    K4S280432 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S280432C

    Abstract: K4S280432D
    Text: K4S280432D CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S280432D CMOS SDRAM Revision History Revision 0.0 Mar., 2001


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    PDF K4S280432D 128Mbit 100MHz A10/AP K4S280432C K4S280432D

    K4S280432C

    Abstract: K4S280432D
    Text: K4S280432D CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S280432D CMOS SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM


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    PDF K4S280432D 128Mbit K4S280432C 10/AP K4S280432D

    Untitled

    Abstract: No abstract text available
    Text: K4S280432E CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 1.0 Nov. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev.1.0 Nov. 2002 K4S280432E CMOS SDRAM Revision History Revision 1.0 Nov., 2002


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    PDF K4S280432E 128Mbit A10/AP

    K4S280432M

    Abstract: No abstract text available
    Text: K4S280432M CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280432M CMOS SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM


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    PDF K4S280432M 128Mbit K4S280432M A10/AP

    K4S281632K-UC

    Abstract: K4S281632K K4S280832K K4S281632KUC K4S280432K K4S280432K-U K4S28163
    Text: K4S280432K K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54 TSOP-II with Pb-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K4S280432K K4S280832K K4S281632K 128Mb A10/AP K4S281632K-UC K4S281632K K4S280832K K4S281632KUC K4S280432K K4S280432K-U K4S28163

    K4S280832

    Abstract: K4S281632K-U
    Text: K4S280432K K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K4S280432K K4S280832K K4S281632K 128Mb A10/AP K4S280832 K4S281632K-U

    Untitled

    Abstract: No abstract text available
    Text: K4S280432D CMOS SDRAM 128Mbit SDRAM Industrial Temp Support 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S280432D CMOS SDRAM


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    PDF K4S280432D 128Mbit 100MHz A10/AP

    K4S281632I

    Abstract: K4S280832I k4s281632 8Mb x 16 K4S280432i
    Text: K4S280432I K4S280832I K4S281632I Synchronous DRAM 128Mb I-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K4S280432I K4S280832I K4S281632I 128Mb A10/AP K4S281632I K4S280832I k4s281632 8Mb x 16 K4S280432i

    K4S280432B

    Abstract: No abstract text available
    Text: K4S280432B CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280432B CMOS SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM


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    PDF K4S280432B 128Mbit K4S280432B A10/AP

    K4S281632K

    Abstract: K4S280432K-U K4S280832K K4S280432K
    Text: K4S280432K K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K4S280432K K4S280832K K4S281632K 128Mb A10/AP K4S281632K K4S280432K-U K4S280832K K4S280432K

    Untitled

    Abstract: No abstract text available
    Text: K4S280432D CMOS SDRAM 128Mbit SDRAM Extended Temp Support 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S280432D CMOS SDRAM


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    PDF K4S280432D 128Mbit 100MHz A10/AP

    K4S280432C

    Abstract: K4S280432C-TC75
    Text: K4S280432C CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2000 K4S280432C CMOS SDRAM Revision History Revision 0.0 March 21, 2000


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    PDF K4S280432C 128Mbit K4S280432C-TC75/TL75 K4S280432C 10/AP K4S280432C-TC75

    Untitled

    Abstract: No abstract text available
    Text: K4S280432D CMOS SDRAM 128Mbit SDRAM 3.3V - Super Low Power 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.0 Oct. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Oct. 2001 K4S280432D CMOS SDRAM


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    PDF K4S280432D 128Mbit K4S280432C A10/AP

    K4S281632I-UC75

    Abstract: K4S281632I-UC60 K4S281632I-UI75 K4S281632I 8MB SDRAM K4S281632I-UL75 8Mb samsung SDRAM K4S281632IUC60 K4S281632IUC75 K4S280832I
    Text: K4S280432I K4S280832I K4S281632I Synchronous DRAM 128Mb I-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K4S280432I K4S280832I K4S281632I 128Mb 215KB K4S281632I-TC75 K4S281632I-UC60 K4S281632I-UC75 K4S281632I-UI75 K4S281632I-UL75 K4S281632I 8MB SDRAM 8Mb samsung SDRAM K4S281632IUC60 K4S281632IUC75

    K4S280432A

    Abstract: No abstract text available
    Text: K4S280432A CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280432A CMOS SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM


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    PDF K4S280432A 128Mbit K4S280432A A10/AP

    M390S3320DT1-C7A

    Abstract: M390S3320DT1 M390S3320DT1-C7C PC133 registered reference design
    Text: PC133 Registered DIMM M390S3320DT1 M390S3320DT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung M390S3320DT1 is a 32M bit x 72 Synchronous •Performance range


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    PDF PC133 M390S3320DT1 M390S3320DT1 32Mx72 32Mx4, M390S3320DT1-C7C 24-pin 133MHz M390S3320DT1-C7A M390S3320DT1-C7A M390S3320DT1-C7C PC133 registered reference design

    K4S280432F

    Abstract: K4S281632F
    Text: SDRAM 128Mb F-die x4, x8, x16 CMOS SDRAM 128Mb F-die SDRAM Specification Revision 1.2 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May 2004 SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM Revision History


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    PDF 128Mb 110mA 140mA 166MHz. A10/AP K4S280432F K4S281632F

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


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    PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    M390S3320DT1

    Abstract: M390S3320DT1-C7A M390S3320DT1-C7C PC133 registered reference design
    Text: PC133 Registered DIMM M390S3320DT1 M390S3320DT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S3320DT1 is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF PC133 M390S3320DT1 M390S3320DT1 32Mx72 32Mx4, 32Mx4 400mil 18-bits M390S3320DT1-C7A M390S3320DT1-C7C PC133 registered reference design

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


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    PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    PC133 registered reference design

    Abstract: No abstract text available
    Text: M390S3320BT1 PC133 Registered DIMM Revision History Revision 0.0 Sep. 1999 • PC133 first published REV. 0 Sep. 1999 PC133 Registered DIMM M390S3320BT1 M390S3320BT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD


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    PDF M390S3320BT1 PC133 M390S3320BT1 32Mx72 32Mx4, PC133 registered reference design

    PC133 registered reference design

    Abstract: No abstract text available
    Text: PC133 Registered DIMM M390S3320ET1 M390S3320ET1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs FEATURE GENERAL DESCRIPTION The Samsung M390S3320ET1 is a 32M bit x 72 Synchronous •Performance range


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    PDF M390S3320ET1 M390S3320ET1 PC133 32Mx72 32Mx4, 32Mx4 400mil 18-bits PC133 registered reference design

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


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    PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    K4S641632k uc60

    Abstract: K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N
    Text: General Information SDRAM SDRAM Product Guide November 2007 Memory Division November 2007 General Information SDRAM A. SDRAM Component Ordering Information 1 2 3 4 5 6 7 8 9 10 11 K 4 S X X X X X X X - X X X X Speed SAMSUNG Memory Temperature & Power DRAM


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    PDF 4K/64ms 128Mb, 256Mb, 8K/64ms 512Mb, 80TYP 25TYP K4S641632k uc60 K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N