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    K4M56163LG Price and Stock

    Samsung Semiconductor K4M56163LG

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    K4M56163LG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4M56163LG Samsung Electronics 2M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF

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    K4M56163LG

    Abstract: 54bA
    Text: K4M56163LG - R B N/G/L/F Mobile SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4M56163LG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF K4M56163LG 16Bit 54FBGA 54bA

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G