K4M51163LC Search Results

K4M51163LC Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
K4M51163LC	Samsung Electronics	8M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA	Original	PDF
K4M51163LC-BN75	Samsung Electronics	8M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA	Original	PDF
K4M51163LC-RG75	Samsung Electronics	8M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA	Original	PDF
K4M51163LC-RN75	Samsung Electronics	8M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA	Original	PDF

K4M51163LC Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K4M51163LC Abstract: No abstract text available Text: K4M51163LC - R B N/G/L/F Mobile SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • VDD/VDDQ = 2.5V/2.5V The K4M51163LC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the	Original	PDF	K4M51163LC 16Bit 54FBGA

Catalog Datasheet

MFG & Type

PDF

Document Tags

K4M51163LC

Abstract: No abstract text available
Text: K4M51163LC - R B N/G/L/F Mobile SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • VDD/VDDQ = 2.5V/2.5V The K4M51163LC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the

Original

PDF

K4M51163LC 16Bit 54FBGA