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    K4H560438D Search Results

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    K4H560438D Price and Stock

    Samsung Semiconductor K4H560438D-TCA2

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    Bristol Electronics K4H560438D-TCA2 28
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    Samsung Semiconductor K4H560438D-TCB0

    SDRAM, DDR, 64M x 4, 66 Pin, Plastic, TSSOP
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    Quest Components K4H560438D-TCB0 39
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    K4H560438D Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Type PDF
    K4H560438D-GC Samsung Electronics DDR 256Mb Original PDF
    K4H560438D-GCA2 Samsung Electronics DDR 256Mb Original PDF
    K4H560438D-GCB0 Samsung Electronics DDR 256Mb Original PDF
    K4H560438D-GCB3 Samsung Electronics DDR 256Mb Original PDF
    K4H560438D-GLA2 Samsung Electronics DDR 256Mb Original PDF
    K4H560438D-GLB0 Samsung Electronics DDR 256Mb Original PDF
    K4H560438D-GLB3 Samsung Electronics DDR 256Mb Original PDF
    K4H560438D-NC Samsung Electronics 256Mb sTSOPII Original PDF
    K4H560438D-NC/LA0 Samsung Electronics DRAM Module, DDR SDRAM Original PDF
    K4H560438D-NC/LA2 Samsung Electronics DRAM Module, DDR SDRAM Original PDF
    K4H560438D-NC/LB0 Samsung Electronics DRAM Module, DDR SDRAM Original PDF
    K4H560438D-NC/LB3 Samsung Electronics DRAM Module, DDR SDRAM Original PDF
    K4H560438D-TC Samsung Electronics 256Mb Original PDF
    K4H560438D-TCA0 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H560438D-TCA2 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H560438D-TCB0 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H560438D-TC/LA0 Samsung Electronics 256Mb Original PDF
    K4H560438D-TC/LA2 Samsung Electronics 256Mb Original PDF
    K4H560438D-TC/LB0 Samsung Electronics 256Mb Original PDF
    K4H560438D-TC/LB3 Samsung Electronics 256Mb Original PDF

    K4H560438D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    256mb ddr333 200 pin

    Abstract: DDR266 DDR266A DDR266B DDR333 K4H560438D-GC K4H561638D
    Text: 256Mb DDR SDRAM Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe DQS • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition


    Original     		PDF 256Mb 8K/64ms 256mb ddr333 200 pin DDR266 DDR266A DDR266B DDR333 K4H560438D-GC K4H561638D

    M383L2828

    Abstract: No abstract text available
    Text: M383L2828DT1 1GB DDR SDRAM MODULE 128Mx72 (64Mx72 *2)based on 64Mx4 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.1 May. 2002 - -1 - Rev. 0.1 May. 2002 M383L2828DT1 Revision History Revision 0.0 (Mar. 2002) 1.First release for internal usage.


    Original     		PDF M383L2828DT1 128Mx72 64Mx72) 64Mx4 184pin 72-bit M383L2828DT1 M383L2828

    Untitled

    Abstract: No abstract text available
    Text: M383L2828DTS 184pin Registered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx72 (64Mx72 *2)based on 64Mx4 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.1 Jan. 2002 - -1 - Rev. 0.1 Jan. 2002 M383L2828DTS 184pin Registered DDR SDRAM MODULE Revision History


    Original     		PDF M383L2828DTS 184pin 128Mx72 64Mx72) 64Mx4 72-bit

    12v AC to DC CIRCUIT DIAGRAM

    Abstract: No abstract text available
    Text: 256Mb DDR SDRAM Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe DQS • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition


    Original     		PDF 256Mb 8K/64ms 31/VREF 12v AC to DC CIRCUIT DIAGRAM

    DDR200

    Abstract: DDR266 DDR333 256mb ddr333 200 pin K4H560438D
    Text: 256Mb sTSOPII DDR SDRAM Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe DQS • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition


    Original     		PDF 256Mb 8K/64ms 54pin DDR200 DDR266 DDR333 256mb ddr333 200 pin K4H560438D

    K4H5

    Abstract: K4H561638D 256mb ddr333 200 pin K4H561638D-TC
    Text: 256Mb DDR SDRAM Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe DQS • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition


    Original     		PDF 256Mb 8K/64ms 66pin K4H5 K4H561638D 256mb ddr333 200 pin K4H561638D-TC

    CL25

    Abstract: No abstract text available
    Text: 256Mb DDR SDRAM Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe DQS • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition


    Original     		PDF 256Mb 4K/64ms 66pin 31/VREF-0 CL25

    Untitled

    Abstract: No abstract text available
    Text: M383L6420DTS 184pin Registered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx72 based on 64Mx4 DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 0.1 Jan. 2002 Rev. 0.1 Jan. 2002 M383L6420DTS 184pin Registered DDR SDRAM MODULE Revision History Revision 0 (Dec. 2001)


    Original     		PDF M383L6420DTS 184pin 512MB 64Mx72 64Mx4 72-bit

    Untitled

    Abstract: No abstract text available
    Text: M312L6420DG0 Preliminary 184pin 1U Registered DDR SDRAM Module 512MB DDR SDRAM MODULE 64Mx72 based on 64Mx4 FBGA DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 0.0 July. 2002 Rev. 0.0 July. 2002 M312L6420DG0 Preliminary 184pin 1U Registered DDR SDRAM Module


    Original     		PDF M312L6420DG0 184pin 512MB 64Mx72 64Mx4 72-bit

    K4H560438

    Abstract: No abstract text available
    Text: M312L6420DG0 184pin 1U Registered DDR SDRAM Module 512MB DDR SDRAM MODULE 64Mx72 based on 64Mx4 FBGA DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 1.0 Dec. 2002 Rev. 1.0 Dec. 2002 M312L6420DG0 184pin 1U Registered DDR SDRAM Module Revision History


    Original     		PDF M312L6420DG0 184pin 512MB 64Mx72 64Mx4 72-bit K4H560438

    K4H560838D-TCB0 256MB

    Abstract: K4H560838D-TCB3 K4H561638D-TLB3 k4h560838d-tcb0
    Text: 256Mb D-die DDR SDRAM DDR SDRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 31. 2002 256Mb D-die DDR SDRAM Revision History Version 0 November, 2001 - First version for internal review of 256Mb D-die. Version 0.1 (December, 2001) - Changed spec. from target to preliminry


    Original     		PDF 256Mb 66pin K4H560838D-TCB0 256MB K4H560838D-TCB3 K4H561638D-TLB3 k4h560838d-tcb0

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DDR SDRAM 256Mb Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe DQS • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition


    Original     		PDF 256Mb 8K/64ms 31/VREF-0

    Untitled

    Abstract: No abstract text available
    Text: M312L6420DT0 184pin 1U Registered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx72 based on 64Mx4 DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 0.0 Jan. 2002 Rev. 0.0 Jan. 2002 M312L6420DT0 184pin 1U Registered DDR SDRAM MODULE Revision History


    Original     		PDF M312L6420DT0 184pin 512MB 64Mx72 64Mx4 72-bit

    M383L6420CT1

    Abstract: No abstract text available
    Text: M383L6420DTS 184pin Registered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx72 based on 64Mx4 DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 M383L6420DTS 184pin Registered DDR SDRAM MODULE Revision History Revision 0 (Dec. 2001)


    Original     		PDF M383L6420DTS 184pin 512MB 64Mx72 64Mx4 72-bit M383L6420CT1

    84x4

    Abstract: No abstract text available
    Text: 256Mb sTSOPII DDR SDRAM Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe DQS • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition


    Original     		PDF 256Mb 4K/64ms 54pin 31/VREF-0 84x4

    K4H560838d-tcb3

    Abstract: No abstract text available
    Text: 256Mb D-die DDR SDRAM DDR SDRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 31. 2002 256Mb D-die DDR SDRAM Revision History Version 0 November, 2001 - First version for internal review of 256Mb D-die. Version 0.1 (December, 2001) - Changed spec. from target to preliminry


    Original     		PDF 256Mb 66pin K4H560838d-tcb3

    Untitled

    Abstract: No abstract text available
    Text: 256Mb DDR SDRAM Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe DQS • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition


    Original     		PDF 256Mb 8K/64ms