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    Samsung Semiconductor K4F641612E-TC50

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    K4F641612E Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4F641612E Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Original PDF
    K4F641612E Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Original PDF
    K4F641612E-TC/L Samsung Electronics DRAM Module, 4Mx16 Bit CMOS Dynamic RAM With Fast Page Mode Original PDF
    K4F641612E-TI/P Samsung Electronics DRAM Module, 4Mx16 Bit CMOS Dynamic RAM With Fast Page Mode Original PDF

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    K4F641612E

    Abstract: K4F661612E
    Text: K4F661612E, K4F641612E CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low pow er)


    Original     		PDF K4F661612E, K4F641612E 16bit 4Mx16 400mil K4F641612E K4F661612E

    K4F641612E

    Abstract: K4F661612E
    Text: Industrial Temperature K4F661612E, K4F641612E CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low pow er)


    Original     		PDF K4F661612E, K4F641612E 16bit 4Mx16 400mil K4F641612E K4F661612E