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    K4F171611D Search Results

    K4F171611D Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4F171611D Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    K4F171611D-J Samsung Electronics 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. Original PDF
    K4F171611D-T Samsung Electronics 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. Original PDF

    K4F171611D Datasheets Context Search

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    K4F171611D

    Abstract: K4F171611D-J K4F171612D K4F171612D-J K4F151611D K4F151611D-J K4F151612D K4F151612D-J
    Text: K4F171611D, K4F151611D K4F171612D, K4F151612D CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power


    Original     		K4F171611D, K4F151611D K4F171612D, K4F151612D 16Bit 1Mx16 h1612D 400mil K4F171611D K4F171611D-J K4F171612D K4F171612D-J K4F151611D K4F151611D-J K4F151612D K4F151612D-J PDF

    K4F151611D

    Abstract: K4F151611D-J K4F151612D K4F151612D-J K4F171611D K4F171611D-J K4F171612D K4F171612D-J
    Text: K4F171611D, K4F151611D K4F171612D, K4F151612D CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power


    Original     		K4F171611D, K4F151611D K4F171612D, K4F151612D 16Bit 1Mx16 400mil K4F151611D K4F151611D-J K4F151612D K4F151612D-J K4F171611D K4F171611D-J K4F171612D K4F171612D-J PDF