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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY Æ HYUNDAI iíB L SEMICONDUCTOR HY62C88 16,384x4-Bit CMOS Static RAM AUGUST 1986 DESCRIPTION FEATURES The HY62C88 is a high speed, low power, 16,384x4-bit static CMOS RAM fabricated using high-performance HYCMOS process technology. This high reliability process coupled w ith in	OCR Scan	HY62C88 384x4-Bit 16Kx4 K29793/4 K23955/7 DS13-08/86	PDF
hyundai Abstract: 536X4 Text: PRELIMINARY A HY51C464 HYUNDAI SEMICONDUCTOR 65,536x4-Bit CMOS Dynamic RAM AUGUST 1986 The HY51C464 offers a maximum standby current of 100 n A when RASs Vdd—0.5V. During standby i.e. refresh only cycles , the refresh period can be extended to 32 ms to reduce the total current re	OCR Scan	536x4-Bit HY51C464 HY51C464 K29793/4 K23955/7 hyundai 536X4	PDF
dvb t receiver circuit diagram Abstract: Hyundai DBS raised cosine Hyundai DVB Single Chip L-band Tuner DVB Satellite LP-901 dvb circuit diagram Text: •HYUNDAI E L E C T R O N I C S DIGITAL MEDIA DIVISION Advanced Product Information - May, 1996 TM HDM85ÎIP CWeST DVB C om pliant Q P S K Dem odulator K i Introduction The HDM8511P CWeST CWeST=Cable, Wireless, Satellite, Telco is a highly integrated, single-chip variable data rate digital	OCR Scan	HDM85 HDM8511P HDM8500 H2-04 LP901 dvb t receiver circuit diagram Hyundai DBS raised cosine Hyundai DVB Single Chip L-band Tuner DVB Satellite LP-901 dvb circuit diagram	PDF
HY27C64-20 Abstract: HY27C64-15 HY27C64-30 IN3064 Text: HY27C64 Æ HYUNDAI SEMICONDUCTOR DESCRIPTION 8192x8-Bit CMOS UV EPROM FEATURES The HY27C64 is a high speed 65,536-bit UV erasable and electrically reprogrammable CMOS EPROM fabricated using high-performance HYCMOS technology, ideally suited for applications where	OCR Scan	HY27C64 8192x8-Bit HY27C64 536-bit HY27C64. 150/200/300ns K29793/4 K23955/7 DS05-08/86 HY27C64-20 HY27C64-15 HY27C64-30 IN3064	PDF
Hyundai Semiconductor Abstract: hy27c64-20 HY27C64A Text: HY27C64 Æ HYUNDAI S E M IC O N D U C T O R DESCRIPTION 8192x8-B it CMOS UV EPROM FEATURES The HY27C64 is a high speed 65,536-bit UV erasable and electrically reprogrammable CMOS EPROM fabricated using high-performance HYCMOS technology, ideally suited for applications where	OCR Scan	HY27C64 8192x8-Bit 536-bit HY27C64. 150/200/300ns 150ns 200ns 300ns K29793/4 Hyundai Semiconductor hy27c64-20 HY27C64A	PDF
Untitled Abstract: No abstract text available Text: A £ SEMICONDUCTOR & & Ë g ! H Y 5 lMxi-Bit 1 C 1cmos 0 0dram M131202A-SEP90 DESCRIPTION FEATURES The HY51C1000 is a high speed, low power 1,048,576X1 bit CM OS dynam ic random ac cess memory. Fabricated with the HYUNDAI CM OS process, the HY51C1000 offers a fast	OCR Scan	M131202A HY51C1000 576X1 K29793/4 K23955/6	PDF
hyundai Abstract: 741 PIN DIAGRAM 741 16 PIN Hyundai Semiconductor HY62C87 Text: P R E L IM IN A R Y HY62C87 Æ HYUNDAI /• ^ S E M IC O N D U C T O R 6 5 ,5 3 6 x l-B it CMOS Static RAM AUGUST 1986 DESCRIPTION FEATURES The HY62C87 is a high speed, low power, 65,536x 1 bit static CMOS RAM fabricated using high perform ance HYCMOS process technology.	OCR Scan	HY62C87 HY62C87 64Kxl K29793/4 K23955/7 DS12-08/86 hyundai 741 PIN DIAGRAM 741 16 PIN Hyundai Semiconductor	PDF
HY61C16-70 Abstract: HY61C16 61C16 k239 Text: HYUNDAI ELE CTRO NI CS 03 «tO ^U O Q HTUNUA1 D Ë 1 4t.750ññ OOOOOñT 3 \| tL fcU IK U N X C S Ö3 D 0 0 0 0 9 D T?4 b “2 3 -1 2 FEATURES DESCRIPTION The HY61C16 is a high speed, low power, 2048-word by 8-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high	OCR Scan	HY61C16 2048-word HY61C16L K29793/4 K23955/7 DS01-02/86 HY61C16-70 61C16 k239	PDF
HY51C64-12 Abstract: DYNAMIC RAM 65536 HY51C64L-12 e1986 Text: s - n o o 0 0 1 8 9 1 m / SEMICONDUCTOR DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynam ic Random Access M emory. Fabricated in CM OS technology, the HY51C64 offers features not provided by NM OS technology-Ripplem ode* fast usable speed, low power, and an average soft error	OCR Scan	HY51C64 HY51C64 150ns K29793/4 K23955/7 DS02-02/86 HY51C64-12 DYNAMIC RAM 65536 HY51C64L-12 e1986	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY JL H Y U N D A I /• ^ S E M IC O N D U C T O R HY62C87 65,536xl-Bit CMOS Static RAM AUGUST 1986 DESCRIPTION FEATURES The HY62C87 is a high speed, low power, 65,536x 1 bit static CMOS RAM fabricated using highperformance HYCMOS process technology.	OCR Scan	HY62C87 536xl-Bit K29793/4 K23955/7 DS12-08/86	PDF
Untitled Abstract: No abstract text available Text: s -n o y 0 0 1 8 9 1 tfY i ^ j& P R E L IM IN A R Y f t SEMICONDUCTOR HY51C64 65,536X1-Bit CMOS Dynamic RAM FEBRUARY 1986 DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynamic Random Access Memory. Fabricated in CMOS technology, the HY51C64 offers features not	OCR Scan	HY51C64 536X1-Bit HY51C64 16-pin 100ns 120ns 150ns K29793/4	PDF
pin diagram AMD FX 9590 Abstract: Transistor AF 138 laser sharp measurement d6406 pby 283 diode data book SN74298 Text: V o lu m e 5 $5.00 Harris Semiconductor Sector Capabilities Harris Semiconductor, one of the top ten U.S. merchant semiconductor suppliers, is a sector of Harris Corporation — a producer of advanced information processing, communication and microelectronic	OCR Scan	K29793 NZ21084 RS39191 pin diagram AMD FX 9590 Transistor AF 138 laser sharp measurement d6406 pby 283 diode data book SN74298	PDF
4096x4 Abstract: Jess Technology HY61C68-25 HY61C68-35 HY61C68-45 HY61C68-55 HY61C68-70 HY61C68L-25 HY61C68L-35 HY61C68L-45 Text: ¿i < /O / - s ' - 2 _ - PRELIM IN A R Y HY61C68 HYUNDAI SEMICONDUCTOR 4 0 9 6 x4-Bit CM OS S tatic RAM OCTOBER 1986 DESCRIPTION The HY61C68 is a high speed, low power, 4096-word by 4-bit static CMOS RAM fabricated using high perform ance CMOS process technology. This high	OCR Scan	HY61C68 4096x4-Bit HY61C68 4096-word HY61C68L J00MIL 300MIL K29793/4 74i-n7S7 4096x4 Jess Technology HY61C68-25 HY61C68-35 HY61C68-45 HY61C68-55 HY61C68-70 HY61C68L-25 HY61C68L-35 HY61C68L-45	PDF