Untitled
Abstract: No abstract text available
Text: PRELIMINARY Æ HYUNDAI iíB L SEMICONDUCTOR HY62C88 16,384x4-Bit CMOS Static RAM AUGUST 1986 DESCRIPTION FEATURES The HY62C88 is a high speed, low power, 16,384x4-bit static CMOS RAM fabricated using high-performance HYCMOS process technology. This high reliability process coupled w ith in
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HY62C88
384x4-Bit
16Kx4
K29793/4
K23955/7
DS13-08/86
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hyundai
Abstract: 536X4
Text: PRELIMINARY A HY51C464 HYUNDAI SEMICONDUCTOR 65,536x4-Bit CMOS Dynamic RAM AUGUST 1986 The HY51C464 offers a maximum standby current of 100 n A when RASs Vdd—0.5V. During standby i.e. refresh only cycles , the refresh period can be extended to 32 ms to reduce the total current re
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536x4-Bit
HY51C464
HY51C464
K29793/4
K23955/7
hyundai
536X4
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dvb t receiver circuit diagram
Abstract: Hyundai DBS raised cosine Hyundai DVB Single Chip L-band Tuner DVB Satellite LP-901 dvb circuit diagram
Text: •HYUNDAI E L E C T R O N I C S DIGITAL MEDIA DIVISION Advanced Product Information - May, 1996 TM HDM85ÎIP CWeST DVB C om pliant Q P S K Dem odulator K i Introduction The HDM8511P CWeST CWeST=Cable, Wireless, Satellite, Telco is a highly integrated, single-chip variable data rate digital
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HDM85
HDM8511P
HDM8500
H2-04
LP901
dvb t receiver circuit diagram
Hyundai DBS
raised cosine
Hyundai DVB
Single Chip L-band Tuner DVB Satellite
LP-901
dvb circuit diagram
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HY27C64-20
Abstract: HY27C64-15 HY27C64-30 IN3064
Text: HY27C64 Æ HYUNDAI SEMICONDUCTOR DESCRIPTION 8192x8-Bit CMOS UV EPROM FEATURES The HY27C64 is a high speed 65,536-bit UV erasable and electrically reprogrammable CMOS EPROM fabricated using high-performance HYCMOS technology, ideally suited for applications where
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HY27C64
8192x8-Bit
HY27C64
536-bit
HY27C64.
150/200/300ns
K29793/4
K23955/7
DS05-08/86
HY27C64-20
HY27C64-15
HY27C64-30
IN3064
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Hyundai Semiconductor
Abstract: hy27c64-20 HY27C64A
Text: HY27C64 Æ HYUNDAI S E M IC O N D U C T O R DESCRIPTION 8192x8-B it CMOS UV EPROM FEATURES The HY27C64 is a high speed 65,536-bit UV erasable and electrically reprogrammable CMOS EPROM fabricated using high-performance HYCMOS technology, ideally suited for applications where
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HY27C64
8192x8-Bit
536-bit
HY27C64.
150/200/300ns
150ns
200ns
300ns
K29793/4
Hyundai Semiconductor
hy27c64-20
HY27C64A
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Untitled
Abstract: No abstract text available
Text: A £ SEMICONDUCTOR & & Ë g ! H Y 5 lMxi-Bit 1 C 1cmos 0 0dram M131202A-SEP90 DESCRIPTION FEATURES The HY51C1000 is a high speed, low power 1,048,576X1 bit CM OS dynam ic random ac cess memory. Fabricated with the HYUNDAI CM OS process, the HY51C1000 offers a fast
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M131202A
HY51C1000
576X1
K29793/4
K23955/6
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hyundai
Abstract: 741 PIN DIAGRAM 741 16 PIN Hyundai Semiconductor HY62C87
Text: P R E L IM IN A R Y HY62C87 Æ HYUNDAI /• ^ S E M IC O N D U C T O R 6 5 ,5 3 6 x l-B it CMOS Static RAM AUGUST 1986 DESCRIPTION FEATURES The HY62C87 is a high speed, low power, 65,536x 1 bit static CMOS RAM fabricated using high perform ance HYCMOS process technology.
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HY62C87
HY62C87
64Kxl
K29793/4
K23955/7
DS12-08/86
hyundai
741 PIN DIAGRAM
741 16 PIN
Hyundai Semiconductor
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HY61C16-70
Abstract: HY61C16 61C16 k239
Text: HYUNDAI ELE CTRO NI CS 03 «tO ^U O Q HTUNUA1 D Ë 1 4t.750ññ OOOOOñT 3 | tL fcU IK U N X C S Ö3 D 0 0 0 0 9 D T?4 b “2 3 -1 2 FEATURES DESCRIPTION The HY61C16 is a high speed, low power, 2048-word by 8-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high
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HY61C16
2048-word
HY61C16L
K29793/4
K23955/7
DS01-02/86
HY61C16-70
61C16
k239
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HY51C64-12
Abstract: DYNAMIC RAM 65536 HY51C64L-12 e1986
Text: s - n o o 0 0 1 8 9 1 m / SEMICONDUCTOR DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynam ic Random Access M emory. Fabricated in CM OS technology, the HY51C64 offers features not provided by NM OS technology-Ripplem ode* fast usable speed, low power, and an average soft error
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HY51C64
HY51C64
150ns
K29793/4
K23955/7
DS02-02/86
HY51C64-12
DYNAMIC RAM 65536
HY51C64L-12
e1986
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY JL H Y U N D A I /• ^ S E M IC O N D U C T O R HY62C87 65,536xl-Bit CMOS Static RAM AUGUST 1986 DESCRIPTION FEATURES The HY62C87 is a high speed, low power, 65,536x 1 bit static CMOS RAM fabricated using highperformance HYCMOS process technology.
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HY62C87
536xl-Bit
K29793/4
K23955/7
DS12-08/86
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Untitled
Abstract: No abstract text available
Text: s -n o y 0 0 1 8 9 1 tfY i ^ j& P R E L IM IN A R Y f t SEMICONDUCTOR HY51C64 65,536X1-Bit CMOS Dynamic RAM FEBRUARY 1986 DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynamic Random Access Memory. Fabricated in CMOS technology, the HY51C64 offers features not
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HY51C64
536X1-Bit
HY51C64
16-pin
100ns
120ns
150ns
K29793/4
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pin diagram AMD FX 9590
Abstract: Transistor AF 138 laser sharp measurement d6406 pby 283 diode data book SN74298
Text: V o lu m e 5 $5.00 Harris Semiconductor Sector Capabilities Harris Semiconductor, one of the top ten U.S. merchant semiconductor suppliers, is a sector of Harris Corporation — a producer of advanced information processing, communication and microelectronic
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K29793
NZ21084
RS39191
pin diagram AMD FX 9590
Transistor AF 138
laser sharp measurement
d6406
pby 283 diode data book
SN74298
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4096x4
Abstract: Jess Technology HY61C68-25 HY61C68-35 HY61C68-45 HY61C68-55 HY61C68-70 HY61C68L-25 HY61C68L-35 HY61C68L-45
Text: ¿i < /O / - s ' - 2 _ - PRELIM IN A R Y HY61C68 HYUNDAI SEMICONDUCTOR 4 0 9 6 x4-Bit CM OS S tatic RAM OCTOBER 1986 DESCRIPTION The HY61C68 is a high speed, low power, 4096-word by 4-bit static CMOS RAM fabricated using high perform ance CMOS process technology. This high
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HY61C68
4096x4-Bit
HY61C68
4096-word
HY61C68L
J00MIL
300MIL
K29793/4
74i-n7S7
4096x4
Jess Technology
HY61C68-25
HY61C68-35
HY61C68-45
HY61C68-55
HY61C68-70
HY61C68L-25
HY61C68L-35
HY61C68L-45
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