Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K1P SINGLE TRANSISTOR Search Results

    K1P SINGLE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K1P SINGLE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K1p TRANSISTOR

    Abstract: No abstract text available
    Text: MMBT2222A 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Epitaxial Planar Die Construction • • Complementary PNP Type: MMBT2907A • • Ideal for Low Power Amplification and Switching Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound


    Original     		PDF MMBT2222A MMBT2907A AEC-Q101 J-STD-020 MIL-STD202, DS30041 K1p TRANSISTOR

    K1P DIODES

    Abstract: MMBT2222AQ-7-F K1P single transistor NPN K1P transistor marking 1p Z K1P SOT23
    Text: MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907A Ideal for Low Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)


    Original     		PDF MMBT2222A MMBT2907A) AEC-Q101 J-STD-020 MIL-STD202, DS30041 K1P DIODES MMBT2222AQ-7-F K1P single transistor NPN K1P transistor marking 1p Z K1P SOT23

    TFD120

    Abstract: TFD-120 TFD200 850g powerline npn darlington 40A
    Text: DTD/TFD120/200 DTD/TFD120/200 Superswitch Powerline NPN Darlington Transistor Replaces November 1999 version, DS5265-2.0 DS5265-3.0 September 2000 APPLICATIONS • High frequency inverters ■ Power supplies ■ Aircraft power supplies ■ Motor controls KEY PARAMETERS


    Original     		PDF DTD/TFD120/200 DS5265-2 DS5265-3 120/200A 200/300A TFD120 TFD-120 TFD200 850g powerline npn darlington 40A

    DS51764

    Abstract: AN4502 DS5176-4 AN4503 AN4505 GP1600FSS18
    Text: GP1600FSS18 GP1600FSS18 Single Switch IGBT Module Replaces January 2000 version, DS5136-3.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1600A Per Module DS5176-4.2 January 2001 KEY PARAMETERS


    Original     		PDF GP1600FSS18 DS5136-3 DS5176-4 GP1600FSS18 DS51764 AN4502 AN4503 AN4505

    AN4502

    Abstract: AN4503 AN4505 GP2401ESM18 3,3 kw high frequency transistor module
    Text: GP2401ESM18 GP2401ESM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module Replaces February 2000 version, DS5345-1.0 FEATURES • Low VCE(SAT) ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5345-2.4 January 2001


    Original     		PDF GP2401ESM18 DS5345-1 DS5345-2 AN4502 AN4503 AN4505 GP2401ESM18 3,3 kw high frequency transistor module

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP2400ESM18
    Text: GP2400ESM18 GP2400ESM18 Hi-Reliability Single Switch IGBT Module DS5406-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 2400A Per Module KEY PARAMETERS VCES typ VCE(sat)


    Original     		PDF GP2400ESM18 DS5406-1 GP2400ESM18 AN4502 AN4503 AN4505 AN4506

    AN4502

    Abstract: DS5358-2 AN4503 AN4505 AN4506 GP800NSS33 an5167 440nF DS-5358
    Text: GP800NSS33 GP800NSS33 Single Switch IGBT Module Preliminary Information Replaces February 2000 version, DS5358-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate with AL2O3 Substrate ■ Low Inductance Internal Construction DS5358-2.1 March 2001


    Original     		PDF GP800NSS33 DS5358-2 GP800NSS33 AN4502 AN4503 AN4505 AN4506 an5167 440nF DS-5358

    723 ic internal diagram

    Abstract: GP1201FSS18 AN4502 AN4503 AN4505 AN4506
    Text: GP1201FSS18 GP1201FSS18 Single Switch Low VCE SAT IGBT Module DS5411-1.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200A Per Module KEY PARAMETERS VCES (typ)


    Original     		PDF GP1201FSS18 DS5411-1 GP1201FSS18 723 ic internal diagram AN4502 AN4503 AN4505 AN4506

    AN4502

    Abstract: AN4503 GP1200ESM33 DS5308-1
    Text: GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5308-2.1 February 2001


    Original     		PDF GP1200ESM33 DS5308-1 DS5308-2 GP1200ESM33 AN4502 AN4503

    Untitled

    Abstract: No abstract text available
    Text: DIM800FSS17-A000 DIM800FSS17-A000 Single Switch IGBT Module Preliminary Information Replaces May 2001 version DS5445-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon DS5445-3.0 October 2001 KEY PARAMETERS


    Original     		PDF DIM800FSS17-A000 DS5445-2 DS5445-3 DIM800FSS17-A000

    Untitled

    Abstract: No abstract text available
    Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Preliminary Information DS5455-1.1 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF DIM1600FSM17-A000 DS5455-1 DIM1600FSM17-A000

    AN4503

    Abstract: AN4502 AN4505 AN4506 GP1200FSM18 AN5000
    Text: GP1200FSM18 GP1200FSM18 Hi-Reliability Single Switch IGBT Module DS5410-1.2 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 1200A Per Module KEY PARAMETERS VCES typ VCE(sat)


    Original     		PDF GP1200FSM18 DS5410-1 GP1200FSM18 AN4503 AN4502 AN4505 AN4506 AN5000

    AN4503

    Abstract: AN4502 AN4505 GP1200FSS18
    Text: GP1200FSS18 GP1200FSS18 Single Switch IGBT Module Replaces February 2000 version, DS5260-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200A Per Module DS5260-3.1 January 2001 KEY PARAMETERS


    Original     		PDF GP1200FSS18 DS5260-2 DS5260-3 GP1200FSS18 AN4503 AN4502 AN4505

    AN4502

    Abstract: AN4503 AN4505 AN4506 AN4507 GP401DDM18 K1p TRANSISTOR
    Text: GP401DDM18 GP401DDM18 Hi-Reliability Dual Switch Low VCE SAT IGBT Module Advance Information DS5397-1.2 January 2001 FEATURES • Low VCE(SAT) ■ 400A Per Switch ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF GP401DDM18 DS5397-1 AN4502 AN4503 AN4505 AN4506 AN4507 GP401DDM18 K1p TRANSISTOR

    GP500LSS06S

    Abstract: No abstract text available
    Text: GP500LSS06S GP500LSS06S Single Switch IGBT Module Replaces January 2000 version, DS4324-5.0 FEATURES DS4324-6.0 October 2001 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat (typ) ■ Low Forward Voltage Drop (max) 700A Isolated Base IC25


    Original     		PDF GP500LSS06S DS4324-5 DS4324-6 GP500LSS06S

    DS550-3

    Abstract: DS5503-1 K1p TRANSISTOR GP400DDM12
    Text: GP400DDM12 GP400DDM12 Dual Switch IGBT Module Advance Information DS5503-1.0 October 2001 FEATURES • High Thermal Cycling Capability ■ 400A Per Switch ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)


    Original     		PDF GP400DDM12 DS5503-1 GP400DDM12 DS550-3 K1p TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: DIM400LSS17-A000 DIM400LSS17-A000 Single Switch IGBT Module Preliminary Information DS5497-1.1 October 2001 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base KEY PARAMETERS VCES typ VCE(sat) (max) IC (max)


    Original     		PDF DIM400LSS17-A000 DS5497-1 DIM400LSS17-A000

    DIM800NSM33-A000

    Abstract: No abstract text available
    Text: DIM800NSM33-A000 DIM800NSM33-A000 Single Switch IGBT Module Preliminary Information Replaces August 2001, version DS5486-1.4 FEATURES DS5486-2.0 October 2001 KEY PARAMETERS • 10µs Short Circuit Withstand VCES ■ High Thermal Cycling Capability VCE sat


    Original     		PDF DIM800NSM33-A000 DS5486-1 DS5486-2 DIM800NSM33-A000

    DIM1200ESM33-A000

    Abstract: LM 1747
    Text: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Preliminary Information Replaces August 2001, version DS5492-1.1 FEATURES DS5492-2.0 October 2001 KEY PARAMETERS • 10µs Short Circuit Withstand VCES ■ High Thermal Cycling Capability VCE sat


    Original     		PDF DIM1200ESM33-A000 DS5492-1 DS5492-2 DIM1200ESM33-A000 LM 1747

    DIM800JSM33-A000

    Abstract: No abstract text available
    Text: DIM800JSM33-A000 DIM800JSM33-A000 High Isolation Single Switch IGBT Module Preliminary Information DS5512-1.1 December 2001 FEATURES KEY PARAMETERS • 10.5kV Isolation VCES ■ 10µs Short Circuit Withstand VCE sat (typ) 3.2V ■ High Thermal Cycling Capability


    Original     		PDF DIM800JSM33-A000 DS5512-1 DIM800JSM33-A000

    AN4502

    Abstract: AN4503 AN4505 GP800FSS18
    Text: GP800FSS18 GP800FSS18 Singles Switch IGBT Module Replaces January 2000 version, DS5261-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module


    Original     		PDF GP800FSS18 DS5261-2 DS5261-3 AN4502 AN4503 AN4505 GP800FSS18

    DS5402-1

    Abstract: AN4502 AN4503 AN4505 AN4506 GP800FSM18
    Text: GP800FSM18 GP800FSM18 Hi-Reliability Single Switch IGBT Module DS5402-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)


    Original     		PDF GP800FSM18 DS5402-1 GP800FSM18 AN4502 AN4503 AN4505 AN4506

    AN4502

    Abstract: AN4503 AN4505 GP1601FSS18 DS5248-4
    Text: GP1601FSS18 GP1601FSS18 Single Switch Low VCE SAT IGBT Module Replaces January 2000 version, DS5248-3.0 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1600A Per module DS5248-4.2 January 2001


    Original     		PDF GP1601FSS18 DS5248-3 DS5248-4 AN4502 AN4503 AN4505 GP1601FSS18

    DS5401-1

    Abstract: basic single phase ac motor reverse forward AN4502 AN4503 AN4505 AN4506 GP801FSM18 DS5401
    Text: GP801FSM18 GP801FSM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module DS5401-1.1 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Switch ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS


    Original     		PDF GP801FSM18 DS5401-1 GP801FSM18 basic single phase ac motor reverse forward AN4502 AN4503 AN4505 AN4506 DS5401