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    K 739 MOSFET Search Results

    K 739 MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K 739 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FH2164

    Abstract: No abstract text available
    Text: FH2164 SILICON N-CHANNEL RF POWER MOSFET PACKAGE STYLE 400 BAL FLG B A B C D E DESCRIPTION: The ASI FH2164 is Designed for Common Source Push Pull RF Power Applications up to 400 MHz. F G MAXIMUM RATINGS ID 4.0 A VDS 50 V PDISS H 1 = SOURCE = FLANGE, O 2 = CHAMFERED 45 LEADS = DRAIN


    Original     		PDF FH2164 FH2164

    irf 739 mosfet

    Abstract: mosfet irf 380 EIA-541 Si4410DYPbF ic power so 8 single mosfet
    Text: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced


    Original     		PDF Si4410DYPbF 800mW EIA-481 EIA-541. irf 739 mosfet mosfet irf 380 EIA-541 ic power so 8 single mosfet

    irf 739 mosfet

    Abstract: IRF 740 PD-94837
    Text: PD-94837 SMPS MOSFET IRFIB5N65APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS† l Lead-Free Benefits l Low Gate Charge Qg results in Simple


    Original     		PDF PD-94837 IRFIB5N65APbF O-220 irf 739 mosfet IRF 740 PD-94837

    EIA-541

    Abstract: Si4410DYPbF
    Text: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced


    Original     		PDF Si4410DYPbF 800mW EIA-481 EIA-541. EIA-541

    Untitled

    Abstract: No abstract text available
    Text: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced


    Original     		PDF Si4410DYPbF 800mW EIA-481 EIA-541.

    Untitled

    Abstract: No abstract text available
    Text: PD-94837 SMPS MOSFET IRFIB5N65APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS† l Lead-Free Benefits Low Gate Charge Qg results in Simple


    Original     		PDF PD-94837 IRFIB5N65APbF O-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD-94837 SMPS MOSFET IRFIB5N65APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS† l Lead-Free Benefits Low Gate Charge Qg results in Simple


    Original     		PDF PD-94837 IRFIB5N65APbF O-220 08-Mar-07

    power mosfet so8 FL

    Abstract: 2F 1 marking irf 739 mosfet IRF P CHANNEL MOSFET PN channel MOSFET 10A HEXFET SO-8 logic level n channel MOSFET tu marking MS-012AA Si4410DY
    Text: PD - 91853B Si4410DY HEXFET Power MOSFET l l l l l N-Channel Mosfet Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N channel MOSFET is produced using International


    Original     		PDF 91853B Si4410DY 800mW power mosfet so8 FL 2F 1 marking irf 739 mosfet IRF P CHANNEL MOSFET PN channel MOSFET 10A HEXFET SO-8 logic level n channel MOSFET tu marking MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: PD - 91853A Si4410DY HEXFET Power MOSFET l l l l l N-Channel Mosfet Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N channel MOSFET is produced using International


    Original     		PDF 1853A Si4410DY 800mW

    1N4690

    Abstract: capacitor c3a capacitor c3b MAX736 MAX737 MAX739 MAX759 MAX737CPD ZENER DIODE J3 MAX736cpd
    Text: M A X 739 E valuation K it Features ♦ Output Voltage: -12V MAX736 -15V (MAX737) -5V (MAX739) Adjustable, OV to -15V (MAX759) The EV kit contains a printed circuit board and all com­ ponents needed to evaluate an application circuit. The PC board is common to the MAX736/MAX737/MAX739/


    OCR Scan     		PDF MAX739 MAX736/MAX737/MAX739/ MAX759. MAX736/MAX737/MAX739 MAX759 MAX736/MAX737) MAX739/wn MAX736 MAX737 1N4690 capacitor c3a capacitor c3b MAX737CPD ZENER DIODE J3 MAX736cpd

    IRCZ44

    Abstract: IRC540 IRC530 IRC640 IRC644 IRC740 IRC840 N6050
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 CunoBbie TpaH 3M C Topbi MOSFET b K opnyce C B03M 0M H 0CTbro KOHTpOHfl M 3a^ M Tbl TpaH3MCTopw M O S F E T cepMM IR C n M e ro T flB a flo n o n H M T e n b H H X BbiBOfla, no3Borm ww,mx pea^M 30BHBaTb #yHKU,Mro orpaHMHeHMfl TOKa m K o m p o rm TeM nepaTypw .


    OCR Scan     		PDF T02205 B03M0WH0CTbW MxpeanM30BbiBaTb( IRC540 IRC640 IRC644 IRC740 IRCZ44 IRC530 IRC840 N6050

    SOT227B

    Abstract: STE15NA100 STE180NE10 STE24NA100 STE26NA90 STE40NA60
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su jen\ 495 739-09-95, 644-41-29 CunoBbie TpaH3MCTopbi MOSFET b Kopnyce SOT-227B (ISOTOP) $ up M b i Microelectronics C # e p a npM M eH eH M a: n p M B O flH w e C M C T e M b i, 6 jio k m n M T a H M ^ UPS, 6 n o K M riM T a H M A c n p e o 6 p a 3 0 B a H M e M


    OCR Scan     		PDF OT-227B npe06pa30BaHMeM npe06pa30Baienm flMana30H ot-55Â STE15NA100 STE24NA100 STE26NA90 STE40NA60 STE180NE10 SOT227B

    IXTN79N20

    Abstract: IXFN48N50 IXFN120N20 IXFN27N80 IXFN36N60 IXFN73N30 IXTN21N100 IXFN106N20 IXFN130N30 IXFN150N15
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 CunoBbie TpaH3MCTopbi MOSFET b K o p n y c e SOT-227B (ISOTOP) $ M pM bi IXYS C # e p a npM M eH eH M a: n p e o 6 p a 3 0 B a ie n M D C-DC, n po M biw ne rn-ib ie MMnynbCHbie 6jiokm nMTaHMfl, cucTeM bi


    OCR Scan     		PDF OT-227B npe06pa30Baienm flMana30H ot-55Â IXTN21N100 IXFN27N80 IXFN36N60 IXFN48N50 IXFN55N50 IXFN130N30 IXTN79N20 IXFN120N20 IXFN73N30 IXFN106N20 IXFN150N15

    Untitled

    Abstract: No abstract text available
    Text: P U L S E W ID T H M O D U LA T IO N A M P L IF IE R S APÉX M I C R O T E C H N O L O G Y SA07 HTTP://W W W .APEXMICROTECH.COM 800 546-APEX (800) 5 4 6 - 2 739 FEATURES • • • • • • • • 5 0 0 k H z SWITCHING FU LL BRIDGE OUTPUT 5 -4 0 V (8 0 V P-P)


    OCR Scan     		PDF 546-APEX 500kHz SA07U

    nf 739 mosfet

    Abstract: No abstract text available
    Text: 19-4749; Rev 3; 5/93 J V I \/ r A \A A -5V, -12V, -15V, an d A djustable Inverting Current-Mode PWM Regulators The MAX736/MAX737/MAX739 have fixed outputs of -12V, -15V, and -5V respectively. The MAX759 is adjustable from OV to -15V. Output voltages beyond -15V require a transformer.


    OCR Scan     		PDF MAX736/MAX737/MAX739 MAX759 165kHz, X739EPD MAX739EWE MAX739MJD MAX759CPD MAX759CWE MAX759C/D MAX759EPD nf 739 mosfet

    marking BSs mosfet

    Abstract: No abstract text available
    Text: SIPMOS N Channel MOSFET BSS 131 • SIPMOS - enhancement mode • Drain-source voltage K>* = 240V • Continuous drain current / 0 = 0.10A • Drain-source on-resistance • Total power dissipation %«on> = 16.00 PD = 0.36W Type Marking Ordering code for versions on 8 mm-tape


    OCR Scan     		PDF Q62702-S565 fp20yi marking BSs mosfet

    Untitled

    Abstract: No abstract text available
    Text: 35E D • fl23k3EG QG171bl fl « S I P SIPMOS N Channel MOSFET BSS131 T ' 3 S - ‘XS' SIEMENS/ SPCL-, SEMICONDS • SIPMOS - enhancement mode • Drain-source voltage Vfct = 240V • Continuous drain current l 0 = 0.10A • Oraln-source on-reslstance • Total power dissipation


    OCR Scan     		PDF fl23k3EG QG171bl BSS131 Q62702-S565 53b32G 00171bb

    DN-12

    Abstract: No abstract text available
    Text: A J ÎK c w m a n A M P com pany RF MOSFET Power Transistor, 15W, 12V 2 - 1 7 5 MHz DU1215S Features • • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices


    OCR Scan     		PDF DU1215S 5-80pF 4-40pF 001uF 1000pF DU1215S DN-12

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION First P age of D ata S heet in P reparation - 5 V In v e rtin g C urrent-M ode PW M R egulators _ Features ♦ Converts Positive Voltages to Negative A high -p e rfo rm a n ce , c u rre n t-m o d e PWM c on trol schem e


    OCR Scan     		PDF AX739 MAX735 AX735M AX755 AX739EW

    Untitled

    Abstract: No abstract text available
    Text: M &CÔM m an A M P com pany RF MOSFET Power Transistor, 20W, 28V 2 - 1 7 5 MHz DU2820S Features • • • • • N-Channel Enh ancem en t Mode Device DMOS Structure I.ower C apacitances for Broadband O peration High Saturated O utput Pow er I.ower Noise Figure Than Bipolar Devices


    OCR Scan     		PDF DU2820S 5-80pF 3-30pF DU2S20S

    Untitled

    Abstract: No abstract text available
    Text: PD-91816 International IÖR Rectifier sMPs MosFET IRFIB5N65A HEXFET Power MOSFET A pplications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed pow er switching • High V oltage Isolation = 2.5K V R M S V dss 650V


    OCR Scan     		PDF PD-91816 IRFIB5N65A

    PTF10026

    Abstract: U016 10026 IEC-68-2-54
    Text: ERICSSON ^ PTF 10026 6 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10026 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation


    OCR Scan     		PDF IEC-68-2-54 Std-002-A P4917-ND P5276 5701-PC 20AWG, PTF10026 U016 10026

    Untitled

    Abstract: No abstract text available
    Text: PD -91815A International lö R Rectifier sMPs MosFET IR F B 9 N 6 5 A HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching V dss 650V Rds(on) max 0.93Î2 Id 8.5 A Benefits


    OCR Scan     		PDF -91815A

    KY 719

    Abstract: 122JK TB163TK TB143TK
    Text: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75


    OCR Scan     		PDF 2SK1973F5 2SK2041 2SK2042 2SK2094F5 2SK2103 2SA1036K 2SA1037AK 2SA1037AKLN 2SA1455K RU101 KY 719 122JK TB163TK TB143TK