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    K 193 TRANSISTOR Search Results

    K 193 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    K 193 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: R1 2 1 3 K SERI ES PWM STEP-UP DC/DC CONVERTERS NO.EA-193-111020 OUTLINE R1213K Series are CMOS-based, PWM control low consumption current step-up DC/DC converter ICs. A low ripple high efficiency step up DC/DC converter can be composed of R1213K with only an inductor, a diode, divider


    Original     		PDF EA-193-111020 R1213K Room403, Room109, 10F-1,

    NR SOT-143

    Abstract: ta 8742 IC Q62702-F1282
    Text: BFP 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-143 Q62702-F1282 Dec-13-1996 NR SOT-143 ta 8742 IC Q62702-F1282

    RCs INFINEON SOT-143

    Abstract: VPS05178 145-V10
    Text: BFP 193 NPN Silicon RF Transistor 3 For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers 4  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF VPS05178 OT-143 900MHz Oct-12-1999 RCs INFINEON SOT-143 VPS05178 145-V10

    Transistor BFR 38

    Abstract: Q62702-F1218 marking code ne sot 23 K 193 transistor
    Text: BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-23 Q62702-F1218 Dec-11-1996 Transistor BFR 38 Q62702-F1218 marking code ne sot 23 K 193 transistor

    Transistor BFR 38

    Abstract: No abstract text available
    Text: BFR 193 NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF VPS05161 OT-23 Oct-25-1999 Transistor BFR 38

    marking BFG

    Abstract: BFG193 VPS05163
    Text: BFG 193 NPN Silicon RF Transistor  For low noise, high-gain amplifiers up to 2 GHz 4  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF VPS05163 BFG193 OT-223 900MHz Oct-27-1999 marking BFG BFG193 VPS05163

    BFG193

    Abstract: Q62702-F1291 gma marking
    Text: BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-223 BFG193 Q62702-F1291 Dec-13-1996 Q62702-F1291 gma marking

    Untitled

    Abstract: No abstract text available
    Text: BFQ 193 NPN Silicon RF Transistor 1  For low noise, high-gain amplifiers up to 2 GHz 2  For linear broadband amplifiers 3  fT = 7.5 GHz F = 1.3 dB at 900 MHz 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF VPS05162 OT-89 Oct-12-1999

    A03 transistor

    Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
    Text: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz


    Original     		PDF Q62702F1610 Q62702F1701 BFY193 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor Q62702F-1610 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor

    Q62702-F1312

    Abstract: marking 93, sot-89 K 193 transistor BFQ193
    Text: BFQ 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F = 1.3 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF Q62702-F1312 OT-89 Dec-13-1996 Q62702-F1312 marking 93, sot-89 K 193 transistor BFQ193

    bfr 135

    Abstract: BFR 30 transistor BFR 80
    Text: BFR 193 L3 NPN Silicon RF Transistor Preliminary data  For low noise, high-gain amplifiers up to 2 GHz XY  For linear broadband amplifiers  fT = 8 GHz 3 F = 1.3 dB at 900 MHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF Feb-08-2001 bfr 135 BFR 30 transistor BFR 80

    ic 006

    Abstract: SD8250 F B J22
    Text: SD8250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N B E C G F I Q M A XIM U M M IN IM U M D IM in ch e s / m m in ch e s / m m .140 / 3.56 A .110 / 2.80 B .110 / 2.80 .395 / 10.03 .407 / 10.34 .193 / 4.90 E MAXIMUM RATINGS .230 / 5.84


    Original     		PDF SD8250 SD8250 ic 006 F B J22

    ac 0624 transistor 17-33

    Abstract: transistor bfp 196 Q62702-F1282 0676 marking BFP193RCs 0166 415 04 1 060
    Text: NPN Silicon RF Transistor BFP 193 ● For low-noise, high-gain amplifiers up to 2 GHz. ● For linear broadband amplifiers. ● Power amplifier for DECT and PCN systems ● fT = 8 GHz F = 1.2 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		PDF Q62702-F1282 OT-143 ac 0624 transistor 17-33 transistor bfp 196 Q62702-F1282 0676 marking BFP193RCs 0166 415 04 1 060

    transistor marking zg

    Abstract: sot-23 Transistor MARKING CODE ZG
    Text: SIEMENS BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F=1.3dEl at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF 900MHz OT-23 Q62702-F1218 BFR193 transistor marking zg sot-23 Transistor MARKING CODE ZG

    P346A

    Abstract: ME8003 ME6002 ME9001 ME9002 BC117 bc142 BSX19 BSX20 BSY95A
    Text: M icro- Electronics Sem iconductors N PN Transistors NPN Switching Transistors m in h FE m ax @ lc mA < < o < < Code V cao V o REFERENCE T A B L E sat ton ns ma to f. ns f T MHz S to c k No. O u tlin e D r a w in g No. BSX19 40 15 20 60 10 0.25 10 7 15 400


    OCR Scan     		PDF BSX19 19552B BSX20 19553X BSY95A 19572G 19573C ME9001 19331F ME9002 P346A ME8003 ME6002 BC117 bc142

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BFQ 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F= 1.3 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! 1 =B II


    OCR Scan     		PDF Q62702-F1312 OT-89 IS21el2 fl235b05 0122D22 0535bD5 D12E0E3

    bfr193

    Abstract: No abstract text available
    Text: SIEMENS BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f j = 8GHz F - 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Q62702-F1218 Pin Configuration


    OCR Scan     		PDF 900MHz Q62702-F1218 OT-23 Junc01 0535bGS P155154 bfr193

    IC 1296

    Abstract: K 193 transistor sot marking code ZS BFQ193
    Text: SIEMENS BFQ193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F = 1.3 dB at 900 MHz Marking Ordering Code Pin Configuration BFQ 193 RCs 1=B 2=C CO II Q62702-F1312 Package m


    OCR Scan     		PDF BFQ193 Q62702-F1312 OT-89 IS21el2 IC 1296 K 193 transistor sot marking code ZS BFQ193

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF 900MHz BFG193 Q62702-F1291 OT-223 235b05 Q12177D D1E1771

    012n3

    Abstract: No abstract text available
    Text: SIEMENS BFP193 NPN Silicon RF Transistor « For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F=1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF BFP193 900MHz Q62702-F1282 OT-143 012n3

    K 193 transistor

    Abstract: ZG 1056
    Text: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900M Hz ESP: Electrostatic discharge sensitive device, observe handling precaution! BFG193 1= E Q62702-F1291


    OCR Scan     		PDF BFG193 Q62702-F1291 OT-223 900MHz K 193 transistor ZG 1056

    ac 0624 transistor 17-33

    Abstract: uc 1604 0166 415 04 1 060 transistor cq 529
    Text: BFP 193 NPN Silicon RF Transistor • For low-noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers. • f j = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code


    OCR Scan     		PDF F1217 OT-143 ac 0624 transistor 17-33 uc 1604 0166 415 04 1 060 transistor cq 529

    lge 673

    Abstract: TRANSISTOR cq 802
    Text: BEE D • 053b3E0 □017Q3C] 0 H S I P NPN N Silicon RF Transistor SIEMENS/ SPCL-. SEMICONDS ^ ^ BFR 193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • fr = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF 053b3E0 017Q3C 62702-F1218 OT-23 01-1-1-7O lge 673 TRANSISTOR cq 802

    CD 1691 CB

    Abstract: CM 1241 siemens R193L cd 1191 cb transistor rf cm 1104 F1218 Transistor BFR 559
    Text: NPN Silicon RF Transistor BFR 193 • For low-noise, high-gain am plifiers up to 2 GHz • For linear broadband amplifiers. • fT = 8 GHz. F = 1.2 d B at 800 MHz. B ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type Marking


    OCR Scan     		PDF F1218 OT-23 CD 1691 CB CM 1241 siemens R193L cd 1191 cb transistor rf cm 1104 F1218 Transistor BFR 559