transistors BC 543
Abstract: TRANSISTOR BC 748 transistor BC 543
Text: SIEMENS BC 857S PNP Silicon A F Transistor Array • For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage •Two galvanic internal isolated Transistors in one package 3Cs lil Lit L±J Pin Configuration
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Q62702-2373
OT-363
fiS35bD5
235LD5
BC857S
0535bD5
012Dbl3
transistors BC 543
TRANSISTOR BC 748
transistor BC 543
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BFQ 58
Abstract: No abstract text available
Text: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F659
OT-23
fi23SbDS
BFQ 58
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-PIN-Fotodiode Silicon PIN Photodiode BPX 65 BPX 66 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • BPX 65: Hohe Fotoempfindlichkeit
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0535bD5
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Untitled
Abstract: No abstract text available
Text: •I Ô235L.05 OQÔIBbS 345 ■ SIEMENS S m art Q uad C hann el Low -S ide Sw itch T L E 5216 G Prelim inary Data Features • Overload protection • Short circuit protection • Cascadeable serial diagnostic interface • Overvoltage protection • nC compatible input
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P-DSO-20-10
00fll3bb
TLE5216G
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Untitled
Abstract: No abstract text available
Text: SIEMENS Standard EEPROM ICs SLx 24C01/02/P 1/2 Kbit 1 2 8 /2 5 6 x 8 bit Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus and Page Protection Mode D atasheet 1998-07-27 fi535bQ5 DllTMMÔ TE? • \ SLx 24C01/02/P Revision History: Current Version: 1998-07-27
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24C01/02/P
fi535bQ5
H3SL05
D11T474
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BFQ 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F= 1.3 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! 1 =B II
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Q62702-F1312
OT-89
IS21el2
fl235b05
0122D22
0535bD5
D12E0E3
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bch limit switch ll1
Abstract: SDA9064 EP-613 power supply sda 20160 EP-603 power supply ep 613 27mhz remote control transmitter and receiver ci VL-609 EP-613 DC POWER SUPPLY sda20160
Text: bSE D • ÖSBSbQS DQ53EÖ4 HTb WÊSIZG SIEMENS SIEMENS AKTIENGESELLSCHAF Digital Deflection Controller SDA 9064 Preliminary Data NMOS IC Features • Pipeline processor structure controls deflection stages • Raster alignment by keyboard or automatically
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DQ53E
100-/120-Hz
Q67100-H8382
P-DIP-40
fl23SbOS
0G5332Ö
235bQ5
bch limit switch ll1
SDA9064
EP-613 power supply
sda 20160
EP-603 power supply
ep 613
27mhz remote control transmitter and receiver ci
VL-609
EP-613 DC POWER SUPPLY
sda20160
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Untitled
Abstract: No abstract text available
Text: SIEM ENS BF 988 Silicon N Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code BF 988 - Q62702-F36 Pin Configuration 2 4 1 3 S D Û2 Package1
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Q62702-F36
300MHz
r-700
fl235b05
00bbfl73
EHM070I2
EHM07013
00bb074
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1321
BFG194
OT-223
23SbDS
012177b
Q1E1777
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sda9088
Abstract: No abstract text available
Text: 47E » • ñS35bDS DGBHQEG SIEM ENS 3 «SIE6 SI EM ENS A K T I E N G E S E L L S C H A F -T -T v -c n -u Picture-in-Picture Processor SDA 9088 Prelim inary Data MOS 1C Features • Input interface compatible to the data format of the Digital Multistandard Decoder
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S35bDS
fi23SbOS
SDA9088
23SbOS
sda9088
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Untitled
Abstract: No abstract text available
Text: SIEMENS CGY 181 GaAs MMIC Preliminary Data • • • • • Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V Overall power added efficiency 35 % Input matched to 50 Q, simple output match ESD: Electrostatic discharge sensitive device,
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Q68000-A8883
fl235b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS PN P Silicon A F and Sw itching Tran sisto rs • • • • B C X 42 B S S 63 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX 41, BSS 64 NPN Type Marking Ordering Code (tape and reel)
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Q62702-C1485
Q62702-S534
OT-23
flS35bG5
535L0S
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Untitled
Abstract: No abstract text available
Text: BSS 229 Infineon technologies SIPMOS Small-Signal Transistor • • • • • • • VDS 250 V /0 0.07 A ^DS on 1 0 0 i l N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Pin C onfigu ration Marking Tape and Reel Inform ation
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Q62702-S600
E6296
SS229
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
G133771
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Untitled
Abstract: No abstract text available
Text: BUZ 22 In fin e o n t«chnologi«s BUZ 22 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type VDs to ^DS on Package Ordering Code BUZ 22 100 V 34 A 0.055 Q TO-220 AB C67078-S1333-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1333-A2
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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