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    Untitled

    Abstract: No abstract text available
    Text: A B C D E G F H REVISIONS 4.50 .177 2.00 .079 24.00 .945 10.20 .402 4.00 .157 1 18.00 .709 30.00±0.25 1.181±.010 DESCRIPTION, ECN, EAR NO. DATE APP'D C PRODUCT DRAWING EAR 13532 JUN10/09 K.L. DATE CODE INK MARKING 1 13.64±0.40 .537±.016 14.00 .551 CONTACT


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    PDF JUN10/09 039ENT FEB28/07 P-MUSB-AA11-XX

    ODV-065R14E17K-G

    Abstract: ODV2-065R18J-G 0/ODV-065R14E17K-G V/ODV-065R18EK-G Comba Telecom TA-E12FDA-A ODV-065R17E18K-G ODV-065R17B ODV-065R15B15J15J ODV-065R15E18K-G
    Text: Antenna & Subsystem Product Catalog Ver2.1 Dec 2012 Antenna & Subsystem Contents Legal


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    PDF SE-167 ODV-065R14E17K-G ODV2-065R18J-G 0/ODV-065R14E17K-G V/ODV-065R18EK-G Comba Telecom TA-E12FDA-A ODV-065R17E18K-G ODV-065R17B ODV-065R15B15J15J ODV-065R15E18K-G

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM34417AA-N •General description ■Features ELM34417AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)


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    PDF ELM34417AA-N ELM34417AA-N P06P03LVG JUN-10-2004

    ELM34417AA

    Abstract: No abstract text available
    Text: 单 P 沟道 MOSFET ELM34417AA-N •概要 ■特点 ELM34417AA-N 是 P 沟道低输入电容,低工作电 •Vds=-30V 压,低导通电阻的大电流 MOSFET。 ·Id=-6A ·Rds on < 45mΩ (Vgs=-10V) ·Rds(on) < 75mΩ (Vgs=-4.5V) ■绝对最大额定值


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    PDF ELM34417AA-N P06P03LVG JUN-10-2004 ELM34417AA

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM34417AA-N •General description ■Features ELM34417AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)


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    PDF ELM34417AA-N ELM34417AA-N P06P03LVG JUN-10-2004

    tcm8210

    Abstract: TCM8210MD ALC 655 VGA camera module TCM8210MDA ITU656 RGB565 YUV422 0YUV422 QCIF
    Text: TCM8210MD A Ver. 2.07 TOSHIBA C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TCM8210MD (A) TENTATIVE VGA CAMERA MODULE The TCM8210MD(A) is a camera module which includes area color image sensor embedded with camera signal processor that meets with VGA format. In the sensor area 492 vertical and 660 horizontal signal pixels, and the image


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    PDF TCM8210MD TCM8210MD tcm8210 ALC 655 VGA camera module TCM8210MDA ITU656 RGB565 YUV422 0YUV422 QCIF

    P06P03LVG

    Abstract: P06P03 niko-sem
    Text: P-Channel Logic Level Enhancement NIKO-SEM P06P03LVG Mode Field Effect Transistor SOP-8 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 45mΩ -6A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


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    PDF P06P03LVG JUN-10-2004 P06P03LVG P06P03 niko-sem

    P06P03

    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM34417AA-N •概要 ■特長 ELM34417AA-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-6A ・ Rds on < 45mΩ (Vgs=-10V) ・ Rds(on) < 75mΩ (Vgs=-4.5V)


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    PDF ELM34417AA-N P06P03LVG JUN-10-2004 P06P03

    1-1393637-0

    Abstract: No abstract text available
    Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. By - H 9 5 - 0 ,4 P /N 5 5 - 0 ,4 0,1 D 8 5 - 0 ,2 old DIST 2 9 ,0 2 - 0 , 2 0,1 C DESCRIPTION DWN DATE APVD AEG MKO D4 ECR—0 8 —012252 18-03-09 D5 ECR—10—002555


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    PDF ECR--10--002555 ECR-10 JUN10 13SEP11 1-1393637-0

    74LV393D

    Abstract: 74LV393PW
    Text: Philips Semiconductors Product specification Dual 4-bit binary ripple counter 74LV393 FEATURES DESCRIPTION • Optimized for Low Voltage applications: 1.0 to 3.6V The 74LV393 is a iow-voltage Si-gate CMOS device and is pin and function compatible with 74HC/HCT393.


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    PDF 74LV393 74LV393 74HC/HCT393. Jun10 74LV393D 74LV393PW

    Untitled

    Abstract: No abstract text available
    Text: GM M M n i "ZD 74LV373 Octal D-type transparent latch 3-State Product specification Supersedes data of 1997 March 04 IC24 Data Handbook Philips Semiconductors 1998 Jun 10 PHILIPS Philips Semiconductors Product specification Octal D-type transparent latch (3-State)


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    PDF 74LV373 74LV373

    74LV3770

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Octal D-type flip-flop with data enable; positive edge-trigger FEATURES DESCRIPTION • Optimized for Low Voltage applications: 1.0 to 3.6V The 74LV377 is a low-voltage CMOS device and is pin and function compatible with 74HC/HCT377.


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    PDF 74LV377 74HC/HCT377. 74LV3770

    Untitled

    Abstract: No abstract text available
    Text: ASK22410- SHEET 1 OF 1 POSITRONIC ASIA PTE. LTD. BELIEVES THE DATA ON THE DRAWING TO BE RELIABLE. SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION AND RISK. POSITRONIC ASIA PTE. LTD. ASSUMES NO


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    PDF ASK22410- Jun10 ASK22410-1 SP5N2N2RN3RN4K1F0001 ASK22410-2 SP5N2N2RN3RN4K1F0001/AA COM/PRODUCTS/146/SCORPION SP5N2N2RN3RN4K1F0001 SP5N2N2RN3RN4K1F0001/AA ASK22410-*

    305 5VL

    Abstract: C510 philips zener diode c18 BZD27 BZD27-C510 "Voltage Regulator Diodes" BZD27-C3V6 BZD27-C7V5 C100 C110
    Text: Product specification Philips Semiconductors Voltage regulator diodes BZD27 series FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass SOD87 package through Implotec ^ technology. This package is • High maximum operating temperature


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    PDF BZD27 Jun10 305 5VL C510 philips zener diode c18 BZD27-C510 "Voltage Regulator Diodes" BZD27-C3V6 BZD27-C7V5 C100 C110

    74LV373PWDH

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Octal D-type transparent latch 3-State 74LV373 FEATURES DESCRIPTION • Wide operating voltage: t .0 to 5.5V The 74LV373 is a low-voltage Si-gate CMOS device that is pin and function compatible with 74HC/HCT373.


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    PDF 74LV373 --25ilC 74LV373 74HC/HCT373. SVQ0fl96 74LV373PWDH