usb flash drive circuit diagram sandisk
Abstract: research paper on wireless usb 3.0 vhdl code for ECC encryption SAMSUNG NAND FLASH TRANSLATION LAYER FTL SAMSUNG NAND FLASH TRANSLATION LAYER suyin camera SUYIN Connector usb USB, Card Reader Audio player circuit sandisk mmc 16MB Micron 32MB NOR FLASH
Text: SmartMedia White Paper Technology and Market Forecast January, 2000 For more information Young Ju KANG Email : JUDY@sec.samsung.com SmartMedia™ White Paper 2000 (c) Samsung Electronics Co.Ltd. I.
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15-micron
256Mb
512Mb
usb flash drive circuit diagram sandisk
research paper on wireless usb 3.0
vhdl code for ECC encryption
SAMSUNG NAND FLASH TRANSLATION LAYER FTL
SAMSUNG NAND FLASH TRANSLATION LAYER
suyin camera
SUYIN Connector usb
USB, Card Reader Audio player circuit
sandisk mmc 16MB
Micron 32MB NOR FLASH
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Untitled
Abstract: No abstract text available
Text: Product data sheet Industrial CFastTM Card F-240 Series SATA II, UDMA6, TRIM, low power Standard and industrial temperature grade B U: Sw i ss b it Gr ou p Date : Ju l y 0 4, 20 1 3 Re vi si o n: 1 . 21 F - 24 0_ da ta_ s he e t_ C A - H x B V_Re v 1 2 1. do c
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F-240
24bit
CH-9552
Rev121
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Untitled
Abstract: No abstract text available
Text: Product data sheet Industrial mSATA SSD MO-300B X-200m Series SATA II - 3.0Gb/s up to UDMA6 / MDMA2 / PIO4 1GByte density type B U: Sw i ss b it Gr ou p Date : Ju l y 1 9 , 2 0 1 2 Re vi si o n: 1 .0 0 Fi le : X - 2 00 m_d at a_ she e t_ S A - U x BR_ 1 GB . doc
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MO-300B)
X-200m
CH-9552
MO-300B
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p5ld2 se
Abstract: No abstract text available
Text: Product Data Sheet Industrial USB Flash Drive Module U-110 Series USB2.0 high speed B U: Fl a sh Pr od u ct s Date : Ju l y 2 , 2 0 13 Re vi si o n : 1 .4 1 Fi le : U - 1 10 _da ta_ s he e t_ UI - x x BP_ Re v 14 1 .d oc U-110 Series USB Flash Drive Module
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U-110
16GByte
CH-9552
Rev141
p5ld2 se
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT f i T 3 fl I 3 1 1 'w • mm ir m mm ■ ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed ; tf= 0 t3 0 ju $ Max,
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GT30J311
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD2586 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2586 H ORIZONTAL DEFLECTION OUTPUT FOR COLO R TV High Voltage VCB0 = 1500 V Low Saturation Voltage VCE sat = 5 v (Max.) tf = 0.3 ju s (Typ.) High Speed Bulkin Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin.
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2SD2586
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1R5DL41A TO S H IB A HIGH EFFICIENCY RECTIFIER HED SILICON E PITAX IAL JU NC TIO N TYPE 1 R5DL41A Unit in mm SW ITCHING TYPE POWER SUPPLY APPLICATIO NS €E Repetitive Peak Reverse Voltage : V r r m = 200 V Average Forward Current : Ip (AV) = 1.5 A (Ta = 25°C)
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1R5DL41A
R5DL41A
961001EAA2'
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1DL41
Abstract: TOSHIBA RECTIFIER
Text: TOSHIBA 1DL41 T O S H IB A HIGH EFFICIENCY RECTIFIER HED SILICON E PITAX IAL JU NC TIO N TYPE 1 DL 4 1 Unit in mm SW ITCHING TYPE POW ER SUPPLY APPLICATIO NS Repetitive Peak Reverse Voltage VRRM = 200 V Average Forward Current IF(AV) = 1-0 A (Ta = 64°C)
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1DL41
961001EAA2'
1DL41
TOSHIBA RECTIFIER
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LQ064V3DG02
Abstract: DF9A-31S-1V DF9B-31S-1V DF9C-31S-1V monochrome cmos IMAGE SENSOR 2005 hiu-359a CS-100 SENSOR HIU-359A-S2
Text: PREPARED BY: APPROVED BY: SHARP SPEC No. LA1-05005B FILE No. ISSU E D : PAGE : JU N E . 28.2006 18 pages MOBILE LIQUID CRYSTAL DISPLAY GROUP APPLICABLE GROUP SHARP CORPORATION MOBILE LIQUID CRYSTAL DISPLAY SPECIFICATION GROUP DEVICE SPECIFICATION FOR TFT-LCD module
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LA1-05005B
LQ064V3DG02
LQ064V3DG02
-iCMH05
LA1-05005B-17
LA1-05005B-18
DF9A-31S-1V
DF9B-31S-1V
DF9C-31S-1V
monochrome cmos IMAGE SENSOR 2005
hiu-359a
CS-100 SENSOR
HIU-359A-S2
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bd123
Abstract: No abstract text available
Text: RN4981 RN4981 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT U nit in mm A N D DRIVER CIRCUIT APPLICATIO NS •EE1 Including Two Devices in U S6 (U ltra Super Mini Type with 6 leads) D6 & 2 With Built-in B ias Resistors -EH 3 Simplify Circuit Design JU i
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RN4981
RN4981)
--10V,
bd123
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1R5DL41
Abstract: TOSHIBA RECTIFIER 1R5DL
Text: TOSHIBA 1R5DL41 T O S H IB A HIGH EFFICIENCY RECTIFIER HED SILICON E PITAX IAL JU NC TIO N TYPE 1 R5DL41 Unit in mm SW ITCH IN G TYPE POW ER SUPPLY APP LIC A TIO N €E Repetitive Peak Reverse Voltage : V r r m = 200 V Average Forward Current : Ip (AV) = 1.5 A (Ta = 25°C)
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1R5DL41
961001EAA2'
1R5DL41
TOSHIBA RECTIFIER
1R5DL
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TA7347P
Abstract: 072G 960917TBA2
Text: TOSHIBA TA7347P 1 2 / n ' i # - ? mV- y mm fà vu =¡> v>y? TA7347P n • * O T à ftftttT to SIP7-P-2.54A I l : 0.72g *!*£ □ -JU ft ± Æ f ê (T a = 25°C) m ÏB s (>È) Æ fé 14 5 VCC ein V in Pd (&) Topr Tstg - 0.3~VCC + 0.3 400 -1 0 -8 0 -5 0 -1 2 5
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TA7347P
960917TBA2
100kHz
43MHz,
0-25io
TA7347P
072G
960917TBA2
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TA8891N
Abstract: 254TYP
Text: TOSHIBA TA8891N TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON M O N O LITH IC T A ftfc Q 1 M • m m imp ■ ■ v AKB AUTOMATIC KINESCOPE BIAS IC T A 8891N m akes c u t-o ff voltages and gains o f R / G / B o u tp u ts fre e fro m ad ju stm en t, and adjusts th e w h ite
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TA8891N
TA8891N
9809Vp
10kHz,
SDIP30-P-400-1
254TYP
254TYP
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TA7348P
Abstract: ta7348 toshiba s 960917TBA2
Text: TOSHIBA TA7348P 1 /n ' 2 - i # - ? m V - y m m f à v u =¡> v>y? TA7348P X t Z 3 i ' 7 Í ¥f S • 3- — h j/ffi-f1# È To $ 7 0 y fffl Il :0.92g * ! * £ ) ( 1) ( 1) ( 2) ( 2) (3) L ÏIfS l n-ju zi > h Ì& (1) =i > h p - ; u (2) $ ZL — h Xj j ÜJ
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TA7348P
960917TBA2
TA7348P
ta7348
toshiba s
960917TBA2
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Untitled
Abstract: No abstract text available
Text: TOSHIBA LASER/FBR OPTIC RO D • ^0=17252 [3015007 S « T O S b TOSHIBA LASER DIODE TOLD 130 is a GaAlAs ty p e la se r diode w ith a g lass w indow . Its. p eak em ission w avelength is 830nm an d maximum optical o u tp u t pow er is 40 mW. TOLD 130 h as a double h ete ro -ju n c tio n
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830nm
T-41-07
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Untitled
Abstract: No abstract text available
Text: U1DL49 TOSHIBA T O S H IB A HIGH EFFICIENCY RECTIFIER H ED SILICON EPIT A X IA L JU N C T IO N T Y PE U1DL49 Unit in mm SW IT C H IN G T Y PE P O W E R S U PP LY A PPLIC A T IO N S V r r m = 200V Repetitive Peak Reverse Voltage Average Forward Current ! f (AV) = 1-0A
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U1DL49
961001EAA2'
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2SA841BL
Abstract: 2SA841 2SA841-BL 2SA841GR 2sa841-gr 2SA841 GR TRANSISTOR 2Sa841 silicon pnp transistor
Text: v 'J = l > P N P i f c f £ * v r JU 2SA841 P C T * ;* SILICON PN P EPITAXIAL TRANSISTOR (PCT PROCESS) U n it in mm O Low Noise Audio Amplifier Applications. • f t l t f E 'C 'f " ' : V ceo = — 6 0 V : NF = 6d B (M a x .) (Rg= 10kQ , f = 10Hz) • = 200~700
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2SA841
95iiMax
2SA841
2SA841â
270Hz,
2SA841BL
2SA841-BL
2SA841GR
2sa841-gr
2SA841 GR
TRANSISTOR 2Sa841
silicon pnp transistor
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2SC2088
Abstract: Produced by Perfect Crystal Device Technology 2sc20
Text: S/U D ^N P N It^i'^JU fôh^^S K P C T B  SILICON NPN EPITAXIAL TRANSISTOR PCT PROCESS TENTATIVE O is» «*rnmt Low Noise Audio Amplifier Applications Unit in mm «»Œ -C -Î-o : Vce O = 120V ü -f-íg íM M 'á NF=6dB (M a x . (Rg=101cQ, f = 1 0 H z )
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10kil,
2SC2088
2SC2088-V
Produced by Perfect Crystal Device Technology
2sc20
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2SK525
Abstract: 2-10L1B C125
Text: ^ ju y H ^ - v y ^ ìm o s w M m m ^ ^ y v ^ s i { 7t- MOS 2SK525 « I o #-íí : m m D C-D C O -ÎT — 1Q3MAX K 7 ' f 7' 9 0 B.2±0.Z t# ft ; t > S t í ^ {&</''o : R D S O N ) = 0- 2 n • l i n ? y • I t x t l t f f t ì ', e a r K î : |y f e |= 4S
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2SK525
T0-220
2SK525
2-10L1B
C125
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2SK389
Abstract: 2SJ109 2-10M1A
Text: TO SH IB A 2SK389 T O SH IBA D U A L FIELD EFFECT T RA N SIST O R SILICON M O N O LITH IC N C H A N N EL JU N C TIO N TYPE 2SK389 L O W NOISE A U D IO A N D D IFFER EN TIA L A M P L IF IE R APPLICA TIO N S. U n it in mm 1 C h ip D u a l Type. 9.5 + 0 3 Recom m ended fo r F ir s t D iffe re n tia l Stag es of D C A m p lifie rs.
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2SK389
2SJ109
2SK389
2SJ109
2-10M1A
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toshiba gto
Abstract: GTO 100A 500V gto 100A GTO thyristor SGR3000GXH26 300a 1500v thyristor 300a 1000v thyristor 100a 1000v GTO GTO thyristor 4500V 4000A
Text: TOSHIBA SGR3000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM —4500V Note 1 R.M.S On-State Current It (RMS)= 1200A (Tf = 77°C) R.M.S Reverse Current I r (RMS) —900A (Tf = 77°C)
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SGR3000GXH26
toshiba gto
GTO 100A 500V
gto 100A
GTO thyristor
SGR3000GXH26
300a 1500v thyristor
300a 1000v thyristor
100a 1000v GTO
GTO thyristor 4500V 4000A
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TCD1205D TOSHIBA CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device TCD1205D The TCD1205D is a high sensitive and low dark current 2048-elements linear image sensor. The sensor can be used for POS handscanner. The device is operated by only 5V power supply, and
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TCD1205D
TCD1205D
2048-elements
22-pin
14//m
WDIP22-G-400-2
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TA8867BN TA8867BN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC VID EO , C H R O M A , A N D SYNC. SIGNAL PROCESSING 1C FOR PA L/N TSC -SYSTEM COLOR TELEVISIONS. The TA8867BN is V id eo , C hrom a, and Sync. Signal processing 1C fo r PAL/NTSC-system co lo r television s
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TA8867BN
TA8867BN
SDIP48-
P-6Q0-1-78
50/SQ
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Untitled
Abstract: No abstract text available
Text: TO S H IBA TA8867AN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T• A & a f ' nir 7m A N m m m m a w VIDEO, CHROMA, AND SYNC. SIGNAL PROCESSING 1C FOR PAL/NTSC-SYSTEM COLOR TELEVISIONS The TA8867AN is V id eo , C hrom a, and Sync. Signal
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TA8867AN
TA8867AN
SDIP48-P-600-1
01//F)
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