JLCC44W Search Results

M27C4002

Abstract: JLCC44W PLCC44 Q0-Q15
Contextual Info: M27C4002 4 Megabit 256K x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 70ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 50mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 24sec.

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

M27C4002

Abstract: 1N914 PLCC44 Q0-Q15
Contextual Info: rZ 7 ^ 7 m» SG S-THO M SO N M27C4002 liS U @ ji@ llL lI ( § V ji lf ilD i 4 Megabit (256K x 16 UV EPROM and OTP ROM > VERY FAST ACCESS TIME: 80ns - COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE • LOW POWER "CMOS” CONSUMPTION: - Active Current 50mA at 5MHz

PLCC32

Abstract: M27C M27W101 M27W102 M27W201 M27W401 M27W402 M27W512 M27W801 TSOP32
Contextual Info: OTP and UV EPROMs New Expanded Range ADVANCED PRODUCTS - DEPENDABLE SOLUTION The ST range of OTP and UV EPROMs is one of the widest in the world. Densities from 16 Kbit to 32 Mbit, plastic and ceramic windowed packages - both surface mounting and through hole standard 5V and low voltage, 3V, operation.

GL 6201

Abstract: PLCC32 M27C M27W101 M27W102 M27W201 M27W401 M27W402 M27W512 M27W801
Contextual Info: OTP and UV EPROMs New Expanded Range ADVANCED PRODUCTS - DEPENDABLE SOLUTION The ST range of OTP and UV EPROMs is one of the widest in the world. Densities from 16 Kbit to 32 Mbit, plastic and ceramic windowed packages - both surface mounting and through hole standard 5V and low voltage, 3V, operation.

27c4002

Abstract: M27C4002
Contextual Info: _ 5EE D r Z J *7 # • 7 ^ 5 ^ 53 7 D Ü 3 7 bS Ô =104 ■ SGTH S C S - T H O M S O N s 6 s-thomson K M o m [I » * S M 27C 4002 CMOS 4 Megabit (256K x 16 UV EPROM and OTP ROM ■ VERY FAST ACCESS TIME: 100ns ■ COMPATIBLE WITH HIGH SPEED MICRO­

Contextual Info: £ y j SGS-THOMSON 0 g[^@[l[L[l(gTO(ô Kiia(gi M27C4002 4 Megabit (256K x 16) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns > COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE - LOW POWER "CMOS” CONSUMPTION: - Active Current 50mA at 5MHz

JLCC44W

Abstract: M27C4002 PDIP40 PLCC44 Q0-Q15 tsop40
Contextual Info: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 70mA at 10MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte (typical)

Contextual Info: M27C4002 4 Megabit 256K x 16 UV EPROM and OTP EPROM DATA BRIEFING FAST ACCESS TIME: 70ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 50mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING

JLCC44W

Abstract: 256kb 16 bit eprom M27C4002 PLCC44 Q0-Q15 0044H
Contextual Info: M27C4002 4 Mbit 256Kb x 16 UV EPROM and OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 50mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIMES of AROUND 24sec.

asm eagle

Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
Contextual Info: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:

Contextual Info: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLYVOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: - Active Current 70m A at 10MHz - Stand by Cu rrent 100jiA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 1OO^s/byte (typical)

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: CMOS 4002 M27C4002 JLCC44W PDIP40 PLCC44 Q0-Q15
Contextual Info: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: 40 40 – Active Current 70mA at 10MHz – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

27C4002

Contextual Info: £ ÿ j S G S-T H O M SO N D IS M iQ J Ig W M lg i M 27C4002 4 Megabit 256K x 16 UV EPROM and OTP EPROM • FAST ACCESS TIME: 70ns ■ LOW POWER "CMOS” CONSUMPTION: - Active Current 50mA at 5MHz - Standby Current 100H-A ■ PROGRAMMING VOLTAGE: 12.75V

JLCC44W

Abstract: M27C4002 PDIP40 PLCC44 Q0-Q15
Contextual Info: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 70mA at 10MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte (typical)

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: CMOS 4002 JLCC44W M27C4002 PDIP40 PLCC44 Q0-Q15
Contextual Info: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: 40 40 – Active Current 70mA at 10MHz – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

JLCC44W

Abstract: M27C4002 PLCC44 Q0-Q15 50mAto
Contextual Info: M27C4002 4 Megabit 256K x 16 UV EPROM and OTP ROM VERY FAST ACCESS TIME: 80ns COMPATIBLE with HIGH SPEED MICROPROCESSORS, ZERO WAIT STATE LOW POWER ”CMOS” CONSUMPTION: – Active Current 50mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V

M27C4002

Contextual Info: ^ 7 SCS-THOMSON * 7 / c Œ M M OgS M 27C 4002 CMOS 4 Megabit 256K x 16 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE with HIGH SPEED MICROPRO­ CESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 50mA at 5MHz

JLCC44W

Abstract: M27C4002 PLCC44 Q0-Q15
Contextual Info: M27C4002 4 Megabit 256K x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 70ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 50mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 24sec.

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: CMOS 4002 JLCC44W M27C4002 PDIP40 PLCC44 Q0-Q15 m27c4002s
Contextual Info: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: 40 40 – Active Current 70mA at 10MHz – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

JLCC44W

Abstract: KE3F
Contextual Info: Memory Products - PACKAGE OUTLINE and MECHANICAL DATA mm Symb Typ inches Min Max A 3.94 A1 Typ Min Max 4.83 0.155 0.190 2.29 3.05 0.090 0.120 B 0.43 0.53 0.017 0.021 B1 0.66 0.81 0.026 0.032 D 17.40 17.65 0.685 0.695 D1 16.00 16.89 0.630 0.665 D2 14.74 16.26

Contextual Info: /= # SGS-THOMSON ^ T / k lì CMOS 4 Megabit 256K x 16 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 100ns ■ C O M PATIBLE W ITH HIGH SPEED M IC R O ­ PROCESSORS, ZERO W AIT STATE ■ LOW POWER “CM O S” CONSUMPTION: - Active Current 50m A at 5MHz

footprint so44

Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
Contextual Info: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad