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    JFET J111 TRANSISTOR Search Results

    JFET J111 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    JFET J111 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    j112

    Abstract: j112g J111
    Text: J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current


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    J111/D j112 j112g J111 PDF

    J112 jfet

    Abstract: J112G J113 equivalent datasheet jfet J111 transistor application note jfet J111 transistor J111 data sheet marking j112 j112 fet transistor J112 J112
    Text: J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current


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    J111/D J112 jfet J112G J113 equivalent datasheet jfet J111 transistor application note jfet J111 transistor J111 data sheet marking j112 j112 fet transistor J112 J112 PDF

    jfet j112

    Abstract: J113 j111 transistor J112 J112 J112 TO92
    Text: ON Semiconductort N–Channel — Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C


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    226AA) r14525 J111/D jfet j112 J113 j111 transistor J112 J112 J112 TO92 PDF

    J111

    Abstract: j113 j112
    Text: ON Semiconductort N–Channel — Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C


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    226AA) J111 j113 j112 PDF

    J112

    Abstract: J113 j111 J112 jfet J111/5
    Text: ON Semiconductort N−Channel — Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain −Gate Voltage Rating VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C


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    O-226AA) J112 J113 j111 J112 jfet J111/5 PDF

    transistor J111

    Abstract: transistor J112 MARKING RK J113 SOT-23 marking M6 140 j112 m6 marking j-fet BSR58LT1
    Text: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C


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    BSR58LT1 OT-23 transistor J111 transistor J112 MARKING RK J113 SOT-23 marking M6 140 j112 m6 marking j-fet PDF

    application note jfet J111 transistor

    Abstract: jfet J111 transistor transistor J111 BSR58LT1 transistor j113 j113 equivalent J111 J112 J113 CODE m6
    Text: BSR58LT1 JFET Chopper Transistor N–Channel – Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Gate Voltage VDG –40 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C


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    BSR58LT1 r14525 BSR58LT1/D application note jfet J111 transistor jfet J111 transistor transistor J111 BSR58LT1 transistor j113 j113 equivalent J111 J112 J113 CODE m6 PDF

    application note jfet J111 transistor

    Abstract: BSR58LT1G M6 BSR58LT1G BSR58LT1 J111 J112 J113 m6 marking transistor sot-23 transistor J111 marking j112
    Text: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current


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    BSR58LT1 BSR58LT1/D application note jfet J111 transistor BSR58LT1G M6 BSR58LT1G BSR58LT1 J111 J112 J113 m6 marking transistor sot-23 transistor J111 marking j112 PDF

    BSR58LT1

    Abstract: No abstract text available
    Text: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS 2 SOURCE Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50


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    BSR58LT1 BSR58LT1/D BSR58LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IT120A IT120 IT121 IT122 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT120 Series Pin for Pin Compatible C1 ABSOLUTE MAXIMUM RATINGS NOTE 1 E1 C2 TA= 25°C unless otherwise noted IC Collector Current


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    IT120A IT120 IT121 IT122 250mW 500mW PDF

    Untitled

    Abstract: No abstract text available
    Text: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1


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    LS301 LS302 LS303 100MHz 250mW 500mW LS301ithic PDF

    J201 Replacement

    Abstract: JFET 401 Dual PNP Transistor depletion 60V power mosfet 3N165 "pin compatible"
    Text: IT130A IT130 IT131 IT132 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT130 Series Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector Current


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    IT130A IT130 IT131 IT132 250mW 500mW J201 Replacement JFET 401 Dual PNP Transistor depletion 60V power mosfet 3N165 "pin compatible" PDF

    sot 26 Dual N-Channel MOSFET

    Abstract: 10mA JFET LS358
    Text: LS358 LOG CONFORMANCE MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES ∆re ≤1Ω from ideal TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC C2 E1 5 B1 BOTH SIDES 500mW 4.3mW/°C


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    LS358 250mW 500mW sot 26 Dual N-Channel MOSFET 10mA JFET PDF

    jfet differential transistor

    Abstract: JFET 401 U402 N CHANNEL FET
    Text: LS318 LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES ∆re =1Ω TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC Maximum Temperatures Storage Temperature Range Operating Junction Temperature


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    LS318 250mW 500mW LS318 jfet differential transistor JFET 401 U402 N CHANNEL FET PDF

    Current Regulator Diode

    Abstract: J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor
    Text: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES HIGH GAIN hFE ≥ 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 275MHz TYP. @ 1mA C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


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    LS350 LS351 LS352 275MHz 250mW 500mW LS352 Current Regulator Diode J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


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    LS310 LS311 LS312 LS313 250MHz 250mW 500mW PDF

    Dual pnp Dual npn Transistor

    Abstract: n-channel JFET sot23-6 surface mount pico-amp diode dual P-Channel JFET sot23 A1 sot23 n-channel dual Channel JFET sot23 "Dual npn Transistor" LS841 SOIC J110 spice A6 SOT-23 MOSFET P-CHANNEL
    Text: LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated


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    LS3550 OT-23 Dual pnp Dual npn Transistor n-channel JFET sot23-6 surface mount pico-amp diode dual P-Channel JFET sot23 A1 sot23 n-channel dual Channel JFET sot23 "Dual npn Transistor" LS841 SOIC J110 spice A6 SOT-23 MOSFET P-CHANNEL PDF

    J201 spice

    Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
    Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated


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    LS3250 OT-23 J201 spice dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310 PDF

    FET package TO-71

    Abstract: SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L
    Text: Transistors Siliconix Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) Max (V) tON Max (ns) Ciss Typ (pF) ID Max (A) PD Max (W) –80 –100 –120 –200 –200 –200 –240 5 5 20 20 20 20 10 –4.5 –4.5 –2.4 –2.8 –2.5 –2.4 –2.5 55 55 25


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    O-226AA VP0808L VP1008L TP1220L BSS92 VP2020L TP2020L VP2410L O-206AF 3N164 FET package TO-71 SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L PDF

    high speed Zener Diode

    Abstract: "Dual PNP Transistor" PAD1 Spice a7 P-CHANNEL LS320 j177 TRANSISTOR "Dual npn Transistor" LS3250 2n5019 ultra low noise
    Text: NC G2 G1 NC NC G2 G1 NC Linear Integrated Systems - Lead Pb Free / RoHS Compliant Parts List MAIN MENU Home Page Page 1 of 3 Linear Integrated Systems Lead-Free / RoHS Fact Sheet Products Support Literature Spice Models Downloads Contact Us Distributors


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    PDF

    Diode r4d

    Abstract: j112 fet J112 J112 jfet application note jfet J111 transistor
    Text: MOTOROLA Order this document by J112/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35


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    J112/D 226AA) Diode r4d j112 fet J112 J112 jfet application note jfet J111 transistor PDF

    70413080

    Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
    Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919


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    2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180 PDF

    bfw11 jfet

    Abstract: jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960
    Text: Small Signal Leaded Devices Field Effect Transistors J-FET cont. ±V DS •d s s -vh{P) GS Pkg (V) (mA) (V) T O -18 T O -18 T O -18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-72 TO-72 TO-72 TO-72


    OCR Scan
    2N4859 2N4860 2N4861 BF245A/0 BF245A BF245B BF245C BF247A BF247B BF247C bfw11 jfet jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET C h o p p e r T ra n sisto r N-Channel — Depletion M AXIMUM RATINGS Rating D ra in -G a te Voltage G a te -S o u rce Voltage Symbol Value Unit VDG -3 5 Vdc VGS -3 5 Vdc Gate Current 'g 50 mAdc Total Device Dissipation @ Ta = 253C


    OCR Scan
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