VS-40EPS12-M3
Abstract: VS-40EPS08-M3 VS-40EPS12
Text: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47
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VS-40EPS.
JEDEC-JESD47
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
VS-40EPS12-M3
VS-40EPS08-M3
VS-40EPS12
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Untitled
Abstract: No abstract text available
Text: VS-10ETF0.FPPbF Series, VS-10ETF0.FP-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base cathode • 150 °C max. operation junction temperature • Designed and JEDEC-JESD47 2 qualified according to • Fully isolated package VINS = 2500 VRMS
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VS-10ETF0.
JEDEC-JESD47
E78996
O-220
2002/95/EC
O-220FP
2011/65/EU
2002/95/EC.
2002/95/EC
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60EPS08PBF
Abstract: VS-60EPS12PBF
Text: VS-60EPS.PbF Series, VS-60EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A Base common cathode FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47
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PDF
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VS-60EPS.
JEDEC-JESD47
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
60EPS08PBF
VS-60EPS12PBF
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Untitled
Abstract: No abstract text available
Text: VS-16TTS.SPbF Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Surface Mountable Phase Control SCR, 16 A FEATURES 2 Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and JEDEC-JESD47 qualified according
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Original
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PDF
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VS-16TTS.
J-STD-020,
JEDEC-JESD47
2002/95/EC
O-263AB
2011/65/EU
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: VS-30TPS16PbF, VS-30TPS16-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 30 A FEATURES 2 A • High voltage (up to 1600 V) • Designed and JEDEC-JESD47 according to • 125 °C max. operating junction temperature 3 2
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PDF
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VS-30TPS16PbF,
VS-30TPS16-M3
JEDEC-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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40ETS12
Abstract: No abstract text available
Text: VS-20ETS16PbF, VS-20ETS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 20 A FEATURES Base cathode 2 • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47 2 3 1 TO-220AC
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PDF
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VS-20ETS16PbF,
VS-20ETS16-M3
JEDEC-JESD47
O-220AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
40ETS12
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Untitled
Abstract: No abstract text available
Text: VS-25TTS.PbF Series, VS-25TTS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage Phase Control Thyristor, 25 A FEATURES 2 A • Designed and JEDEC-JESD47 qualified according to • 125 °C max. operating junction temperature • Compliant to RoHS Directive 2002/95/EC
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VS-25TTS.
JEDEC-JESD47
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VS-20ETF.SPbF Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 20 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according to JEDEC-JESD47 Base common cathode
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PDF
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VS-20ETF.
J-STD-020,
JEDEC-JESD47
SMD-220)
O-263AB
VS-20ETF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47
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Original
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PDF
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VS-40EPS.
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES Base • Very low forward voltage drop cathode + 2 • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47
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PDF
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VS-80APS16PbF,
VS-80APS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-16TTS.SPbF Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Surface Mount Phase Control SCR, 16 A FEATURES 2 Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and JEDEC-JESD47 TO-263AB D2PAK 1 Cathode
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Original
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PDF
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VS-16TTS.
J-STD-020,
JEDEC-JESD47
O-263AB
VS-16electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-25TTS16SPbF www.vishay.com Vishay Semiconductors Thyristor Surface Mount, Phase Control SCR, 16 A FEATURES Anode 2 • Meets MSL level 1, per LF maximum peak of 260 °C • Designed and JEDEC-JESD47 2 3 1 qualified J-STD-020, according • Material categorization:
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PDF
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VS-25TTS16SPbF
JEDEC-JESD47
J-STD-020,
O-263AB
125electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-HFA30PB120PbF, VS-HFA30PB120-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 30 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and JEDEC-JESD47 Base common cathode to BENEFITS •
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PDF
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VS-HFA30PB120PbF,
VS-HFA30PB120-N3
JEDEC-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-60EPS.PbF Series, VS-60EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A Base common cathode FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47
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Original
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PDF
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VS-60EPS.
JEDEC-JESD47
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-20ETS08S-M3, VS-20ETS12S-M3 Series www.vishay.com Vishay Semiconductors High Voltage Surface Mount Input Rectifier Diode, 20 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according to JEDEC -JESD47
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Original
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PDF
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VS-20ETS08S-M3,
VS-20ETS12S-M3
J-STD-020,
-JESD47
O-263AB
VS-20ETelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
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VS-20ETS08F
Abstract: No abstract text available
Text: VS-20ETS.FPPbF Series, VS-20ETS.FP-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 20 A FEATURES • Very low forward voltage drop Base cathode 2 • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47
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Original
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PDF
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VS-20ETS.
JEDEC-JESD47
O-220
E78996
2002/95/EC
O-220FP
2002/95/EC.
2002/95/EC
2011/65/EU.
VS-20ETS08F
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Untitled
Abstract: No abstract text available
Text: VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3, Series www.vishay.com Vishay Semiconductors High Voltage Surface Mount Input Rectifier Diode, 10 A FEATURES • Meets MSL level 1, per LF maximum peak of 260 °C Base cathode 2 • Designed and qualified JEDEC -JESD47
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Original
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PDF
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VS-10ETS08S-M3,
VS-10ETS10S-M3,
VS-10ETS12S-M3,
-JESD47
O-263AB
J-STD-020,
16electronic
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: VS-10ETF10S-M3, VS-10ETF12S-M3 Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 10 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according to JEDEC -JESD47
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Original
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PDF
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VS-10ETF10S-M3,
VS-10ETF12S-M3
J-STD-020,
-JESD47
O-263AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-10ETF1.FPPbF Series, VS-10ETF1.FP-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base cathode • 150 °C max. operation junction temperature • Designed and JEDEC-JESD47 2 qualified according to • Fully isolated package VINS = 2500 VRMS
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Original
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PDF
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VS-10ETF1.
JEDEC-JESD47
E78996
O-220AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-25TTS.SPbF Series www.vishay.com Vishay Semiconductors Thyristor, Surface Mount, Phase Control SCR, 16 A FEATURES Anode 2 • Meets MSL level 1, per LF maximum peak of 260 °C • Designed and JEDEC-JESD47 according • Material categorization: For definitions of compliance please see
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Original
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PDF
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VS-25TTS.
JEDEC-JESD47
J-STD-020,
O-263AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-HFA15PB60PbF, VS-HFA15PB60-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and JEDEC-JESD47
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Original
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PDF
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VS-HFA15PB60PbF,
VS-HFA15PB60-N3
2002/95/EC
JEDEC-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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VS-10TTS08-M3
Abstract: No abstract text available
Text: VS-10TTS08PbF, VS-10TTS08-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 10 A FEATURES 2 A • Designed and JEDEC-JESD47 qualified according to • 125 °C max. operating junction temperature • Material categorization:
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Original
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PDF
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VS-10TTS08PbF,
VS-10TTS08-M3
JEDEC-JESD47
O-220AB
VS-10TTS08.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
VS-10TTS08-M3
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Untitled
Abstract: No abstract text available
Text: VS-20ETF.SPbF Series www.vishay.com Vishay Semiconductors Surface Mountable Fast Soft Recovery Rectifier Diode, 20 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according to JEDEC-JESD47 Base common
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Original
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PDF
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VS-20ETF.
J-STD-020,
JEDEC-JESD47
2002/95/EC
SMD-220)
O-263AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47
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Original
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PDF
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VS-40EPS.
JEDEC-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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