JESD47 Search Results
JESD47 Datasheets Context Search
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VS-40EPS12-M3
Abstract: VS-40EPS08-M3 VS-40EPS12
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VS-40EPS. JEDEC-JESD47 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. VS-40EPS12-M3 VS-40EPS08-M3 VS-40EPS12 | |
Contextual Info: VS-10ETF0.FPPbF Series, VS-10ETF0.FP-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base cathode • 150 °C max. operation junction temperature • Designed and JEDEC-JESD47 2 qualified according to • Fully isolated package VINS = 2500 VRMS |
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VS-10ETF0. JEDEC-JESD47 E78996 O-220 2002/95/EC O-220FP 2011/65/EU 2002/95/EC. 2002/95/EC | |
60EPS08PBF
Abstract: VS-60EPS12PBF
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VS-60EPS. JEDEC-JESD47 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 60EPS08PBF VS-60EPS12PBF | |
Contextual Info: VS-16TTS.SPbF Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Surface Mountable Phase Control SCR, 16 A FEATURES 2 Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and JEDEC-JESD47 qualified according |
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VS-16TTS. J-STD-020, JEDEC-JESD47 2002/95/EC O-263AB 2011/65/EU 2002/95/EC. 2002/95/EC | |
Contextual Info: VS-30TPS16PbF, VS-30TPS16-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 30 A FEATURES 2 A • High voltage (up to 1600 V) • Designed and JEDEC-JESD47 according to • 125 °C max. operating junction temperature 3 2 |
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VS-30TPS16PbF, VS-30TPS16-M3 JEDEC-JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
40ETS12Contextual Info: VS-20ETS16PbF, VS-20ETS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 20 A FEATURES Base cathode 2 • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47 2 3 1 TO-220AC |
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VS-20ETS16PbF, VS-20ETS16-M3 JEDEC-JESD47 O-220AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 40ETS12 | |
Contextual Info: VS-25TTS.PbF Series, VS-25TTS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage Phase Control Thyristor, 25 A FEATURES 2 A • Designed and JEDEC-JESD47 qualified according to • 125 °C max. operating junction temperature • Compliant to RoHS Directive 2002/95/EC |
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VS-25TTS. JEDEC-JESD47 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. | |
Contextual Info: VS-20ETF.SPbF Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 20 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according to JEDEC-JESD47 Base common cathode |
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VS-20ETF. J-STD-020, JEDEC-JESD47 SMD-220) O-263AB VS-20ETF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47 |
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VS-40EPS. -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES Base • Very low forward voltage drop cathode + 2 • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47 |
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VS-80APS16PbF, VS-80APS16-M3 -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: VS-16TTS.SPbF Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Surface Mount Phase Control SCR, 16 A FEATURES 2 Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and JEDEC-JESD47 TO-263AB D2PAK 1 Cathode |
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VS-16TTS. J-STD-020, JEDEC-JESD47 O-263AB VS-16electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: VS-25TTS16SPbF www.vishay.com Vishay Semiconductors Thyristor Surface Mount, Phase Control SCR, 16 A FEATURES Anode 2 • Meets MSL level 1, per LF maximum peak of 260 °C • Designed and JEDEC-JESD47 2 3 1 qualified J-STD-020, according • Material categorization: |
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VS-25TTS16SPbF JEDEC-JESD47 J-STD-020, O-263AB 125electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: VS-HFA30PB120PbF, VS-HFA30PB120-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 30 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and JEDEC-JESD47 Base common cathode to BENEFITS • |
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VS-HFA30PB120PbF, VS-HFA30PB120-N3 JEDEC-JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: VS-60EPS.PbF Series, VS-60EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A Base common cathode FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47 |
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VS-60EPS. JEDEC-JESD47 2002/95/EC O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: VS-20ETS08S-M3, VS-20ETS12S-M3 Series www.vishay.com Vishay Semiconductors High Voltage Surface Mount Input Rectifier Diode, 20 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according to JEDEC -JESD47 |
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VS-20ETS08S-M3, VS-20ETS12S-M3 J-STD-020, -JESD47 O-263AB VS-20ETelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. | |
VS-20ETS08FContextual Info: VS-20ETS.FPPbF Series, VS-20ETS.FP-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 20 A FEATURES • Very low forward voltage drop Base cathode 2 • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47 |
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VS-20ETS. JEDEC-JESD47 O-220 E78996 2002/95/EC O-220FP 2002/95/EC. 2002/95/EC 2011/65/EU. VS-20ETS08F | |
Contextual Info: VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3, Series www.vishay.com Vishay Semiconductors High Voltage Surface Mount Input Rectifier Diode, 10 A FEATURES • Meets MSL level 1, per LF maximum peak of 260 °C Base cathode 2 • Designed and qualified JEDEC -JESD47 |
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VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3, -JESD47 O-263AB J-STD-020, 16electronic 2002/95/EC. 2002/95/EC | |
Contextual Info: VS-10ETF10S-M3, VS-10ETF12S-M3 Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 10 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according to JEDEC -JESD47 |
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VS-10ETF10S-M3, VS-10ETF12S-M3 J-STD-020, -JESD47 O-263AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: VS-10ETF1.FPPbF Series, VS-10ETF1.FP-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base cathode • 150 °C max. operation junction temperature • Designed and JEDEC-JESD47 2 qualified according to • Fully isolated package VINS = 2500 VRMS |
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VS-10ETF1. JEDEC-JESD47 E78996 O-220AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: VS-25TTS.SPbF Series www.vishay.com Vishay Semiconductors Thyristor, Surface Mount, Phase Control SCR, 16 A FEATURES Anode 2 • Meets MSL level 1, per LF maximum peak of 260 °C • Designed and JEDEC-JESD47 according • Material categorization: For definitions of compliance please see |
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VS-25TTS. JEDEC-JESD47 J-STD-020, O-263AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-HFA15PB60PbF, VS-HFA15PB60-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and JEDEC-JESD47 |
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VS-HFA15PB60PbF, VS-HFA15PB60-N3 2002/95/EC JEDEC-JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
VS-10TTS08-M3Contextual Info: VS-10TTS08PbF, VS-10TTS08-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 10 A FEATURES 2 A • Designed and JEDEC-JESD47 qualified according to • 125 °C max. operating junction temperature • Material categorization: |
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VS-10TTS08PbF, VS-10TTS08-M3 JEDEC-JESD47 O-220AB VS-10TTS08. 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A VS-10TTS08-M3 | |
Contextual Info: VS-20ETF.SPbF Series www.vishay.com Vishay Semiconductors Surface Mountable Fast Soft Recovery Rectifier Diode, 20 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according to JEDEC-JESD47 Base common |
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VS-20ETF. J-STD-020, JEDEC-JESD47 2002/95/EC SMD-220) O-263AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 |
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VS-40EPS. JEDEC-JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A |