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    Untitled

    Abstract: No abstract text available
    Text: KM736V887 KM718V987 PRELIMINARY 256Kx36 & 512Kx18 Synchronous SRAM Document T itle 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision H is to ry Rev. No. History Draft Date Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 Change DC Characteristics.


    OCR Scan     		PDF KM736V887 KM718V987 256Kx36 512Kx18 512Kx18-Bit 1024K 17ELECTRONICS

    A9281

    Abstract: 1993 SDRAM ra2t 1993 SDRAM samsung KM48SV2000
    Text: PRELIMINARY CMOS SDRAM KM48SV2000 2M X 8 BIT SYNCHRONOUS DYNAMIC RAM GENERAL DESCRIPTION FEATURES The KM48SV2000 is a 16,777,216 bit synch­ ronous high data rate Dynamic RAM organized as 2,097,152 words by 8bits, fabricated with SAMSUNG'S high performance CMOS technology.


    OCR Scan     		PDF KM48SV2000 KM48SV2000 17SMAX -16ELECTRONICS A9281 1993 SDRAM ra2t 1993 SDRAM samsung

    Untitled

    Abstract: No abstract text available
    Text: KM736V849 KM718V949 PRELIMINARY 256Kx36 & 512KX18 Pipelined NfRAM Document Title 256Kx36 & 512Kx18-Bit Pipelined NfRAM™ Revision History Rev. No. 0.0 History 1. Initial document. Draft Date Remark June. 09. 1998 Preliminary 0.1 1. Changed DC parameters


    OCR Scan     		PDF KM736V849 KM718V949 256Kx36 512KX18 512Kx18-Bit 450mA 420mA 150MHZ. 15ELECTRONICS

    Untitled

    Abstract: No abstract text available
    Text: KM736S849 KM718S949 PRELIMINARY 256Kx36 & 512Kx18 Pipelined NfRAM Document Title 256KX36 & 512Kx18-Bit Pipelined NfRAM™ Revision History Rev. No. Historv Draft Date Remark 0.0 1. Initial document. September. 1997 Prelim inary 0.1 1. Changed speed bin from 167MHz to 150MHz


    OCR Scan     		PDF KM736S849 KM718S949 256KX36 512Kx18 512Kx18-Bit 167MHz 150MHz