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    JESD22 A113 Search Results

    JESD22 A113 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    59202-T36-25A113LF Amphenol Communications Solutions Minitek® 2.00mm, Board To Board, Unshrouded Vertical Header, Surface Mount, Double Row, 50 Positions. Visit Amphenol Communications Solutions
    10155552-A113KLF Amphenol Communications Solutions Minitek MicroSpaceXS™ 1.27mm Crimp-to-Wire Connector Platform, wire-to-board, Header Header Vertical, Tin (preplated) Visit Amphenol Communications Solutions
    L77DFE09SOL2A113 Amphenol Communications Solutions Dsub, Machined Pin 7.5A, Straight PCB Thru Hole, Cnt Length=5.5mm (0.217in), Cnt =0.6mm (0.024in), 09 Socket, Bright Tin Shell, 0.38m (15 in) Gold, A113=Clear Hole Spacer Height 5.5mm Visit Amphenol Communications Solutions
    L77DFB25SOL2A113 Amphenol Communications Solutions Dsub, Machined Pin 7.5A, Straight PCB Thru Hole, Cnt Length=5.5mm (0.217in), Cnt =0.6mm (0.024in), 25 Socket, Bright Tin Shell, 0.38m (15 in) Gold, A113=Clear Hole Spacer Height 5.5mm Visit Amphenol Communications Solutions
    MHDRAA1130 Amphenol Communications Solutions Rugged HDMI, IP67, Input Output Connectors, Right Angle, with a PCB, Unified Thread, 19 Position Visit Amphenol Communications Solutions

    JESD22 A113 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EIAJ ED-4701 305

    Abstract: No abstract text available
    Text: Reliability Test Category Environmental Test No Test Category Related Standards Test Conditions Purpose MIL-STD-883G IEC 60749 IEC 60068-2 JESD22 EIAJ ED-4701 ― Part 5 ― A101-C Method 102 To evaluate the endurance of the devices when used in high temperature and high humidity


    Original     		MIL-STD-883G JESD22 ED-4701 A101-C A103-C 200pF A114-F A115-A JESD78A EIAJ ED-4701 305 PDF

    JESD22-A104

    Abstract: JESD22-A113 transistor A114 JESD22-C101 JESD22-A118 transistor C101 A101 A103 JESD22-A108 A108
    Text: RF6281 Qualification Report Page 1 of 1 QLT-01090, Revision B Product Description A 3V High Band 1700/1900MHz linear amplifier module Package Type Laminate Module, 4 x 4 x 1 mm Process Technology GaAs Qualification # 06-QUAL‐756 06‐QUAL‐757


    Original     		RF6281 QLT-01090, 1700/1900MHz) 06QUAL756 06QUAL757 JESD22A108, JESD22A101, JESD22A113 JESD22A103, JESD22B102 JESD22-A104 JESD22-A113 transistor A114 JESD22-C101 JESD22-A118 transistor C101 A101 A103 JESD22-A108 A108 PDF

    JESD22-A104

    Abstract: JESD22-A113 transistor A114 JESD22 JESD22A104 rf6285 JESD22-A114 A114 transistor NK80530VY400256 a118
    Text: RF6285 Qualification Report Page 1 of 1 QLT-01093, Revision C Product Description A high-power, high‐efficiency multi‐band linear power amplifier module Package Type Laminate Module 5.5 x 6 x 1 mm Process Technology GaAs Qualification #


    Original     		RF6285 QLT-01093, 06QUAL757 JESD22A108, JESD22A101, JESD22A113 JESD22A103, JESD22B102 JESD22 QAL-04-1049 JESD22-A104 JESD22-A113 transistor A114 JESD22 JESD22A104 JESD22-A114 A114 transistor NK80530VY400256 a118 PDF

    JESD22-A104

    Abstract: JESD22-A113 transistor A114 A114 transistor JESD22-B102 JESD22-C101 JESD22 JESD22-A114 transistor C101 A101
    Text: RF1132 Qualification Report Page 1 of 1 QLT-03370, Revision B Product Description Broadband High Power SP3T Switch Package Type 2 x 2 x 0.55 mm 12-pin QFN Process Technology GaAs Qualification # 08‐QUAL‐1082 08‐QUAL‐1062 Date Issued


    Original     		RF1132 QLT-03370, 12pin 08QUAL1082 08QUAL1062 JESD22A108, JESD22A101, JESD22A114 JESD22A104, JESD22A113 JESD22-A104 JESD22-A113 transistor A114 A114 transistor JESD22-B102 JESD22-C101 JESD22 JESD22-A114 transistor C101 A101 PDF

    Qual

    Abstract: A104 A108 A113
    Text: W3E64M72S-XSBX Application Note W3E64M72S-XSBX PACKAGE CONSTRUCTION + QUALIFICATION ENCAPSULANT TEST The encapsulant is not injection molded to control wire sweep effects TG = 150°C Moisture sensitivity is to JEDEC level 3 Burn-In – 100% at 125°C Final Electrical Test – 100% at maximum and


    Original     		W3E64M72S-XSBX W3E64M72S-XSBX Sn63/Pb37 762mm EIA/JESD22 Qual A104 A108 A113 PDF

    Sn63

    Abstract: A104 A108 A113 WEDPN4M64V-XBX WEDPN4M72V-XB2X
    Text: White Electronic Designs WEDPN4M72V-XB2X WEDPN4M64V-XBX PBGA MULTI-CHIP PACKAGE CONSTRUCTION ENCAPSULANT TEST „ Thickness around die = 0.015” to 0.020” typical „ Burn-In – 100%-48 hours at 125°C „ The encapsulant is not injection molded to control


    Original     		WEDPN4M72V-XB2X WEDPN4M64V-XBX Sn63/Pb37 762mm EIA/JESD22 Sn63 A104 A108 A113 WEDPN4M64V-XBX WEDPN4M72V-XB2X PDF

    JESD22

    Abstract: WEDPN16M72V-XB2X A104 A108 A113 WEDPN16M64V-XB2X
    Text: WEDPN16M72V-XB2X WEDPN16M64V-XB2X White Electronic Designs PBGA MULTI-CHIP PACKAGE CONSTRUCTION ENCAPSULANT TEST Thickness around die = 0.015 to 0.020 typical Burn-In – 100%-48 hours at 125°C The encapsulant is not injection molded to control wire sweep effects


    Original     		WEDPN16M72V-XB2X WEDPN16M64V-XB2X Sn63/Pb37 762mm EIA/JESD22 JESD22 WEDPN16M72V-XB2X A104 A108 A113 WEDPN16M64V-XB2X PDF

    JESD22

    Abstract: A104 A108 A113 W364M72V-XSBX
    Text: White Electronic Designs W364M72V-XSBX PBGA MULTI-CHIP PACKAGE CONSTRUCTION ENCAPSULANT TEST The encapsulant is not injection molded to control wire sweep effects Burn-In – 100%-48 hours at 125°C TG = 150°C Final Electrical Test – 100% at maximum and


    Original     		W364M72V-XSBX Sn63/Pb37 762mm EIA/JESD22 JESD22 A104 A108 A113 W364M72V-XSBX PDF

    W3E64M16S-XSBX

    Abstract: A104 A108 A113
    Text: W3E64M16S-XSBX Application Note W3E64M16S-XSBX PACKAGE CONSTRUCTION + QUALIFICATION ENCAPSULANT TEST The encapsulant is not injection molded to control wire sweep effects TG = 150°C Moisture sensitivity is to JEDEC level 3 Burn-In – 100%-48 hours at 125°C


    Original     		W3E64M16S-XSBX W3E64M16S-XSBX Sn63/Pb37 EIA/JESD22 200A00004-42) AN0022 A104 A108 A113 PDF

    JESD22

    Abstract: W3H32M72E-XSBX A104 A108 A113
    Text: W3H32M72E-XSBX Application Note W3H32M72E-XSBX PACKAGE CONSTRUCTION + QUALIFICATION ENCAPSULANT TEST The encapsulant is not injection molded to control wire sweep effects TG = 150°C Moisture sensitivity is to JEDEC level 3 Burn-In – 100%-48 hours at 125°C


    Original     		W3H32M72E-XSBX W3H32M72E-XSBX Sn63/Pb37 EIA/JESD22 200A00004-45) AN0044 JESD22 A104 A108 A113 PDF

    JESD22

    Abstract: SN63 PB37 A104 A108 A113 W332M64V-XSBX
    Text: W332M64V-XSBX Application Note W332M64V-XSBX PACKAGE CONSTRUCTION + QUALIFICATION ENCAPSULANT TEST Thickness around die = 0.015 to 0.020 typical The encapsulant is not injection molded to control wire sweep effects Burn-In – 100%-48 hours at 125°C Final Electrical Test – 100% at maximum and


    Original     		W332M64V-XSBX W332M64V-XSBX Sn63/Pb37 EIA/JESD22 200A00004-X) AN0045 W223M64V-XSBX JESD22 SN63 PB37 A104 A108 A113 PDF

    JESD22

    Abstract: A104 A108 A113 W3H32M64E-XSBX
    Text: W3H32M64E-XSBX Application Note W3H32M64E-XSBX PACKAGE CONSTRUCTION + QUALIFICATION ENCAPSULANT TEST The encapsulant is not injection molded to control wire sweep effects TG = 150°C Moisture sensitivity is to JEDEC level 3 Burn-In – 100%-48 hours at 125°C


    Original     		W3H32M64E-XSBX W3H32M64E-XSBX Sn63/Pb37 EIA/JESD22 200A00004-46) AN0019 JESD22 A104 A108 A113 PDF

    EIA/JESD22

    Abstract: A104 A108 A113 W764M32V-XSBX
    Text: W764M32V-XSBX Application Note W764M32V-XSBX PACKAGE CONSTRUCTION + QUALIFICATION ENCAPSULANT TEST The encapsulant is not injection molded to control wire sweep effects TG = 150°C Moisture sensitivity is to JEDEC level 3 Burn-In – 100%-48 hours at 125°C


    Original     		W764M32V-XSBX W764M32V-XSBX Sn63/Pb37 AN0021 EIA/JESD22 A104 A108 A113 PDF

    Shipping Trays

    Abstract: A104 A108 A113 W72M64VK-XBX
    Text: W72M64VK-XBX Application Note W72M64VK-XBX PACKAGE CONSTRUCTION + QUALIFICATION ORGANIZATION TEST 2M x 64 4 banks per Flash Burn-In – 100%-48 hours at 125°C Final Electrical Test – 100% at maximum and minimum ambient temperatures Temperature Ranges Available:


    Original     		W72M64VK-XBX W72M64VK-XBX Sn63/Pb37 762mm EIA/JESD22 C/85RH Shipping Trays A104 A108 A113 PDF

    JESD22

    Abstract: Sn46 PB46 7410E A104 A108 A113 WED3C7410E16M-400BX
    Text: WED3C7410E16M-400BX POWER PC 7410E MULTI-CHIP PACKAGE CONSTRUCTION HIGH RELIABILITY FLIP CHIP ATTACH TEST • C4 Assembly on PowerPC™ Processors & SSRAM die ■ Burn-In - 100%, 48 hours at 125°C ■ JEDEC Level 2 underfill ■ Die Thickness ■ Final Electrical Test - 100% at maximum and


    Original     		WED3C7410E16M-400BX 7410E Sn46/Pb46/Bi8 835mm EIA/JESD22 200A0004-18 JESD22 Sn46 PB46 A104 A108 A113 WED3C7410E16M-400BX PDF

    JESD22

    Abstract: A104 A108 A113 W72M64V-XBX
    Text: W72M64V-XBX 2M X 64 FLASH PBGA MULTI-CHIP PACKAGE CONSTRUCTION ORGANIZATIONS „ BALLS 2M x 64 Flash „ „ ENCAPSULANT „ „ „ TEST The encapsulant is not injection molded to control wire sweep effects TG = 150°C Moisture sensitivity is to JEDEC level 3 „


    Original     		W72M64V-XBX Sn63/Pb37 762mm EIA/JESD22 C/85RH JESD22 A104 A108 A113 W72M64V-XBX PDF

    A104

    Abstract: A108 A113 WEDPS512K32V-XBX WEDPS512K32-XBX
    Text: WEDPS512K32-XBX WEDPS512K32V-XBX White Electronic Designs 512K x 32 SRAM PBGA MULTI-CHIP PACKAGE CONSTRUCTION ENCAPSULANT TEST n Thickness around die = 0.015 to 0.020 typical n The encapsulant is not injection molded to control wire sweep effects n TG = 150°C


    Original     		WEDPS512K32-XBX WEDPS512K32V-XBX 835mm EIA/JESD22 A104 A108 A113 WEDPS512K32V-XBX WEDPS512K32-XBX PDF

    SN46

    Abstract: PB46 JESD22 A104 A108 A113 WED3C750A8M-200BX
    Text: White Electronic Designs WED3C750A8M-200-BX WED3C7558M-300-BX POWER PC™ MULTI-CHIP PACKAGE CONSTRUCTION HIGH RELIABILITY FLIP CHIP ATTACH TEST • C4 Assembly on PowerPCÔ Processors & SSRAM die ■ Burn-In - 100%, 48 hours at 125°C ■ Final Electrical Test - 100% at maximum and


    Original     		WED3C750A8M-200-BX WED3C7558M-300-BX Sn46/Pb46/Bi8 835mm EIA/JESD22 200A0004-4 200A0004-5 SN46 PB46 JESD22 A104 A108 A113 WED3C750A8M-200BX PDF

    A104

    Abstract: A108 A113 W332M64V-XBX W332M72V-XBX W3E32M64S-XBX W3E32M72S-XBX Qual 0004x
    Text: W332M64V-XBX W332M72V-XBX W3E32M64S-XBX W3E32M72S-XBX White Electronic Designs 256MB SDRAM and DDR PBGA MULTI-CHIP PACKAGE CONSTRUCTION ORGANIZATIONS BALLS „ 32M x 64 SDRAM „ Eutectic solder Sn63/Pb37 „ 32M x 72 SDRAM „ Diameter = 0.762mm 0.030 Nominal


    Original     		W332M64V-XBX W332M72V-XBX W3E32M64S-XBX W3E32M72S-XBX 256MB Sn63/Pb37 762mm 0004-X EIA/JESD22 A104 A108 A113 W332M64V-XBX W332M72V-XBX W3E32M64S-XBX W3E32M72S-XBX Qual 0004x PDF

    WEDPN8M72VR-XBX

    Abstract: A108 A113 WEDPN16M64VR-XBX WEDPN16M64V-XBX WEDPN16M72VR-XBX WEDPN16M72V-XBX WEDPN8M64VR-XBX
    Text: WEDPN16M64V-XBX WEDPN16M72V-XBX WEDPN16M64VR-XBX WEDPN16M72VR-XBX WEDPN8M64VR-XBX WEDPN8M72VR-XBX White Electronic Designs 64MB/128MB REGISTERED SDRAM & 128MB SDRAM PBGA MULTI-CHIP PACKAGE CONSTRUCTION ORGANIZATIONS 16M x 64 SDRAM BALLS n n Eutectic solder Sn63/Pb37


    Original     		WEDPN16M64V-XBX WEDPN16M72V-XBX WEDPN16M64VR-XBX WEDPN16M72VR-XBX WEDPN8M64VR-XBX WEDPN8M72VR-XBX 64MB/128MB 128MB Sn63/Pb37 835mm WEDPN8M72VR-XBX A108 A113 WEDPN16M64VR-XBX WEDPN16M64V-XBX WEDPN16M72VR-XBX WEDPN16M72V-XBX WEDPN8M64VR-XBX PDF

    PV smd transistor

    Abstract: JEDEC htrb bd 142 transistor
    Text: GeneSiC Semiconductor Reliability Report on 1200 V SiC Junction Transistor SJT Devices Revision 1.1 (Jan. 2014) 1 Table of Contents 1. Report Summary . 3 2. Reliability Test Plan . 3


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: GeneSiC Semiconductor Reliability Report on 1200 V SiC Schottky Rectifiers Revision 1.1 Nov. 2013 1 Table of Contents 1. Report Summary . 3 2. Reliability Test Plan . 3


    Original     		PDF

    transistor 70603

    Abstract: 70603 a103 636 transistor 70603 scr JESD A114 A101 A102 A103 S/transistor 70603 JESD-22
    Text: SST Product Reliability Technical Paper 1.0 INTRODUCTION The SST quality policy is: To satisfy customer requirements by providing products and services that are cost effective, on schedule, and with zero nonconformances to specifications. SST is developing a quality system in accordance with


    Original     		ISO-9001 29EE020/29LE020/29VE020 29EE010/29LE010/29VE010 29EE512/29LE512/29VE512 transistor 70603 70603 a103 636 transistor 70603 scr JESD A114 A101 A102 A103 S/transistor 70603 JESD-22 PDF

    JESD22 a113

    Abstract: CY7C64601 CY7C64603 CY7C64613 EME-6300 JESD22 Fab25 rh1003
    Text: Cypress Semiconductor Product/Technology Qualification Report QTP# 000602 VERSION 2.1 November, 2000 Full Speed CYUSB Family CY7C64601 CY7C64603 CY7C64613 EZ-USB FX USB Microcontroller CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director


    Original     		CY7C64601 CY7C64603 CY7C64613 35umTLM 1000Hrs 200Cycle 96Hrs. JESD22 a113 CY7C64601 CY7C64603 CY7C64613 EME-6300 JESD22 Fab25 rh1003 PDF