jedec MS-026 ABA footprint
Abstract: jedec MS-026 ABA JEDEC MS-026 footprint JEDEC MS-026 ABD HD JEDEC MS-026 ABC N1287 2N176 1141-1 BD-BH HD7x
Text: i 0 .2 5 GAUGE PLANE 1 FIG 2 SECTION A - A FIGURE 3 SECTION B - B JEDEC SOLID STATE PRODUCT OUTLINES TITLE LOW/THIN PROFILE PLASTIC QUAD FLAT PACKAGE, 2.00 mm FOOTPRINT. OPTIONAL HEAT SLUG ISSU E D ATE C 2 /9 9 PAGE MS-026 2 OF 18 EVEN LEAD SIDES TOP VIEW
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JEDEC J-STD-020
Abstract: No abstract text available
Text: MXO45LV/MXO45HSLV METAL DIP CLOCK OSCILLATOR FEATURES • • • • • Standard 14 Pin or 8 Pin DIP Footprint HCMOS/TTL Compatible Fundamental and 3rd Overtone Crystals Frequency Range 1.0 – 50 MHz Frequency Stability, ±50 ppm Standard ±25 ppm and ±20 ppm available
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MXO45LV/MXO45HSLV
MXO45LV/MXO45HSLV
45TLV
45HSLV
2x10-8
J-STD-020.
JEDEC J-STD-020
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JEDEC J-STD-020
Abstract: MXO45HSLV-3C-32M7680 MXO45LV MXO45LV-3C-32M7680
Text: MXO45LV/MXO45HSLV METAL DIP CLOCK OSCILLATOR FEATURES • • • • • Standard 14 Pin or 8 Pin DIP Footprint HCMOS/TTL Compatible Fundamental and 3rd Overtone Crystals Frequency Range 1.0 – 50 MHz Frequency Stability, ±50 ppm Standard ±25 ppm and ±20 ppm available
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MXO45LV/MXO45HSLV
MXO45LV/MXO45HSLV
2x10-8
J-STD-020.
JEDEC J-STD-020
MXO45HSLV-3C-32M7680
MXO45LV
MXO45LV-3C-32M7680
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JEDEC J-STD-020
Abstract: mxo45 application notes MXO45HS MXO45 45HST 10 mhz clock 14 pin dip
Text: MXO45/MXO45HS METAL DIP CLOCK OSCILLATOR FEATURES • • • • • Standard 14 Pin or 8 Pin DIP Footprint HCMOS/TTL Compatible Fundamental and 3rd Overtone Crystals Frequency Range 1.0 – 105.561 MHz Frequency Stability, ±50 ppm Standard ±25 ppm and ±20 ppm available
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MXO45/MXO45HS
MXO45/MXO45HS
2x10-8
J-STD-020.
JEDEC J-STD-020
mxo45 application notes
MXO45HS
MXO45
45HST
10 mhz clock 14 pin dip
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JEDEC J-STD-020
Abstract: mxo45 application notes 45HST MXO45HS REV A MXO45HS
Text: MXO45/MXO45HS METAL DIP CLOCK OSCILLATOR FEATURES • • • • • Standard 14 Pin or 8 Pin DIP Footprint HCMOS/TTL Compatible Fundamental and 3rd Overtone Crystals Frequency Range 1.0 – 105.561 MHz Frequency Stability, ±50 ppm Standard ±25 ppm and ±20 ppm available
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MXO45/MXO45HS
MXO45/MXO45HS
2x10-8
J-STD-020.
JEDEC J-STD-020
mxo45 application notes
45HST
MXO45HS REV A
MXO45HS
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SCS521
Abstract: halogen
Text: WILLAS FM120-M+ THRU SCS521G FM1200-M+ 100mA Surface Mount Schottky Barrier Rectifiers-30V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-723 SOD-123+ Package PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers
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100mA
Rectifiers30V
OD-723
OD-123
FM120-M+
SCS52
FM1200-M
OD-123H
FM120-MH
FM130-MH
SCS521
halogen
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ THRU SCS520G FM1200-M+ 100mA Surface Mount Schottky Barrier Rectifiers-30V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-723SOD-123+ Package PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers
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100mA
Rectifiers-30V
OD-723
OD-123
FM120-M+
SCSFM1200-M
OD-123H
FM120-MH
FM130-MH
FM140-MH
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ THRU SCS751G FM1200-M+ 30mA Surface Mount Schottky Barrier Rectifiers-40V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-723SOD-123+ Package PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers
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Rectifiers-40V
OD-723
OD-123
FM120-M+
SCS75
FM1200-M
OD-123H
FM120-MH
FM130-MH
FM140-MH
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68L SOT 353
Abstract: tip 3035 transistor C04-067 footprint jedec MS-026 TQFP SP-750 footprint jedec MS-026 TQFP 128 C0421 30014 c04090 transistor wm
Text: SECTION 11 PACKAGING Outlines and Parameters . 1 Product Tape and Reel Specifications . 58
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DS00049R-page
68L SOT 353
tip 3035 transistor
C04-067
footprint jedec MS-026 TQFP
SP-750
footprint jedec MS-026 TQFP 128
C0421
30014
c04090
transistor wm
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16N170A
Abstract: diode 22 161 smd
Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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16N170A
16N170A
diode 22 161 smd
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Untitled
Abstract: No abstract text available
Text: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V = 30 A IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous
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15N120C
O-247
O-268
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C
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35N120B
O-268
O-247
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXGH 35N120C IXGT 35N120C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C
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35N120C
O-247
O-268
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ixgh35n120b
Abstract: No abstract text available
Text: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C
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35N120B
35N120B
O-268
O-247
ixgh35n120b
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C
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35N120B
O-247
O-268
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXGH 15N100C IXGT 15N100C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C
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15N100C
15N100C
O-268
O-247
O-268AA
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Untitled
Abstract: No abstract text available
Text: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V IC25 = 30 A 3.8 V VCE sat = tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous
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15N120C
15N120C
O-268
O-247
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 15N120B IXGT 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20
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15N120B
15N120B
O-247
O-268
O-268AA
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 15N120B IXGT 15N120B VCES = 1200 V IC25 = 30 A VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20
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15N120B
15N120B
O-247
O-268
O-268AA
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXGH 15N100C IXGT 15N100C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C
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15N100C
15N100C
O-268
O-247
O-268AA
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 75 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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42N170
O-247
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752 J 1600 V CAPACITOR
Abstract: 16N170 BiMOSFET
Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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16N170
O-268
O-247
752 J 1600 V CAPACITOR
16N170
BiMOSFET
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Untitled
Abstract: No abstract text available
Text: IXGH 20N100 IXGT 20N100 IGBT VCES IC25 VCE sat tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient
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20N100
O-247
O-268
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IXGH30N60B
Abstract: IXGT30N60B
Text: HiPerFASTTM IGBT IXGH30N60B IXGT30N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms
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IXGH30N60B
IXGT30N60B
IC110
O-247
O-268
IXGH30N60B
IXGT30N60B
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