IRF E78996
Abstract: IRK E78996 701819-303ac E78996 rectifier module wiring IRKT THYRISTOR THYRISTOR MODULE I27130 I27900 IRKH26 IRKL26 IRKT26 irkt 40
Text: Bulletin I27130 rev. C 09/97 IRK.26 SERIES NEW ADD-A-pakTM Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Electrically isolated: DBC base plate 3500 VRMS isolating voltage Standard JEDEC package Simplified mechanical designs, rapid assembly
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I27130
E78996
IRF E78996
IRK E78996 701819-303ac
E78996 rectifier module wiring
IRKT THYRISTOR THYRISTOR MODULE
I27900
IRKH26
IRKL26
IRKT26
irkt 40
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IRK E78996 701819-303ac
Abstract: I27900 IRKH105 IRKL105 IRKT105 IRK. Series
Text: Bulletin I27133 rev. D 09/97 IRK.105 SERIES NEW ADD-A-pakTM Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Electrically isolated: DBC base plate 3500 VRMS isolating voltage Standard JEDEC package Simplified mechanical designs, rapid assembly
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Original
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PDF
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I27133
E78996
IRK E78996 701819-303ac
I27900
IRKH105
IRKL105
IRKT105
IRK. Series
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IRK E78996 701819-303ac
Abstract: IRKT 180 I27900 IRK. Series
Text: Bulletin I27131 rev. C 09/97 IRK.41, .56 SERIES NEW ADD-A-pakTM Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Electrically isolated: DBC base plate 3500 VRMS isolating voltage Standard JEDEC package Simplified mechanical designs, rapid assembly
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Original
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PDF
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I27131
E78996
singl10
IRK E78996 701819-303ac
IRKT 180
I27900
IRK. Series
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Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 qualified according
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Original
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PDF
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VS-60EPS16PbF,
VS-60EPS16-M3
JEDEC-JESD47
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 qualified according
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Original
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PDF
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VS-60EPS16PbF,
VS-60EPS16-M3
JEDEC-JESD47
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VS-40EPS16PbF, VS-40EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47
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Original
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PDF
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VS-40EPS16PbF,
VS-40EPS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES Base • Very low forward voltage drop cathode + 2 • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47
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Original
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PDF
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VS-80APS16PbF,
VS-80APS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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irf 1740
Abstract: IRK E78996 701819-303ac IRF E78996 I27900 irkt 350 IRKT THYRISTOR THYRISTOR MODULE irkt 40 IRK. Series
Text: Bulletin I27132 rev. D 09/97 IRK.71, .91 SERIES NEW ADD-A-pakTM Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Electrically isolated: DBC base plate 3500 VRMS isolating voltage Standard JEDEC package Simplified mechanical designs, rapid assembly
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Original
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PDF
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I27132
E78996
irf 1740
IRK E78996 701819-303ac
IRF E78996
I27900
irkt 350
IRKT THYRISTOR THYRISTOR MODULE
irkt 40
IRK. Series
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I27900
Abstract: I27132
Text: Bulletin I27132 rev. D 09/97 IRK.71, .91 SERIES NEW ADD-A-pakTM Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Electrically isolated: DBC base plate 3500 VRMS isolating voltage Standard JEDEC package Simplified mechanical designs, rapid assembly
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Original
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PDF
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I27132
E78996
I27900
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Untitled
Abstract: No abstract text available
Text: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES Base • Very low forward voltage drop cathode + 2 • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47
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Original
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PDF
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VS-80APS16PbF,
VS-80APS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES Base • Very low forward voltage drop cathode + 2 • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47
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Original
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PDF
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VS-80APS16PbF,
VS-80APS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-40EPS16PbF, VS-40EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47
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Original
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PDF
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VS-40EPS16PbF,
VS-40EPS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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JEDEC-JESD47
Abstract: 80aps16
Text: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES • Very low forward voltage drop Base cathode 4, 2 • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47 qualified
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Original
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PDF
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VS-80APS16PbF,
VS-80APS16-M3
JEDEC-JESD47
2002/95/EC
O-247AC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
80aps16
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Untitled
Abstract: No abstract text available
Text: VS-40EPS16PbF, VS-40EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 qualified according
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Original
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PDF
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VS-40EPS16PbF,
VS-40EPS16-M3
JEDEC-JESD47
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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|
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Untitled
Abstract: No abstract text available
Text: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES • Very low forward voltage drop Base cathode 4, 2 • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47 qualified
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Original
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PDF
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VS-80APS16PbF,
VS-80APS16-M3
JEDEC-JESD47
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: VS-80APS16PbF, VS-80APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES Base • Very low forward voltage drop cathode + 2 • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47
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Original
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PDF
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VS-80APS16PbF,
VS-80APS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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VS-10ETS08
Abstract: VS-10ETS12 PBF VS-10ETS
Text: VS-10ETS.PbF Series, VS-10ETS.M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 10 A FEATURES Base cathode 2 • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47
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Original
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PDF
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VS-10ETS.
JEDEC-JESD47
2002/95/EC
O-220AC
O-220AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
VS-10ETS08
VS-10ETS12 PBF
VS-10ETS
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Untitled
Abstract: No abstract text available
Text: VS-60EPS.PbF Series, VS-60EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES • Very low forward voltage drop Base cathode • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47
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Original
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PDF
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VS-60EPS.
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-60EPS.PbF Series, VS-60EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A Base common cathode FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47
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Original
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PDF
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VS-60EPS.
JEDEC-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: VS-60EPS.PbF Series, VS-60EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES • Very low forward voltage drop Base cathode • 150 °C max. operating junction temperature • Designed and qualified JEDEC -JESD47
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Original
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PDF
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VS-60EPS.
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: VS-10ETS.PbF Series, VS-10ETS.M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 10 A FEATURES Base cathode 2 • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47
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Original
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PDF
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VS-10ETS.
JEDEC-JESD47
O-220AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47 2
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Original
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PDF
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VS-60EPS16PbF,
VS-60EPS16-M3
-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-10ETS.PbF Series, VS-10ETS.M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 10 A FEATURES Base cathode 2 • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47
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Original
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PDF
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VS-10ETS.
JEDEC-JESD47
O-220AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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zener diode 1N PH 48
Abstract: zener diode 1N PH 53 1N3020-1 Diodo zener W diodo zener C 18 ph 1N1743 diode ziner 1N4202 ST 41 Diodo Zener 1N32B
Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART C ontaining all JEDEC re gistere d Zener diodes. This popular re fere nce cha rt contains high lig h t inform ation on all JEDEC registered Ze ner diode and re c tifie r types as w ell as M icrosem i types. The follow in g Codes are used:
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OCR Scan
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BZX83
BZX97
BZX98
BZY97
BZD10
BZW22
BZV40
500mW
DO-35
zener diode 1N PH 48
zener diode 1N PH 53
1N3020-1
Diodo zener W
diodo zener C 18 ph
1N1743
diode ziner
1N4202
ST 41 Diodo Zener
1N32B
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