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    JE3439 Price and Stock

    onsemi MJE3439G

    TRANS NPN 350V 0.3A TO126
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    onsemi MJE3439

    Trans Npn 350V 0.3A To225Aa |Onsemi MJE3439
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    MJE3439 146
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    Motorola Semiconductor Products MJE3439

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    ComSIT USA MJE3439 1,430
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    Component Electronics, Inc MJE3439 2
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    JE3439 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JE3439

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE3439 NPN Silicon H igh-Voltage Power Transistors . . . designed for use in line-operated equipment requiring high f-p • High DC Current Gain hfE = 40-160 @ lc = 20 mAdc • Current Gain Bandwidth Product — f j = 15 MHz Min @ Iq = 10 mAdc


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    PDF JE3439

    JE3439

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by JE3439/D SEMICONDUCTOR TECHNICAL DATA M JE3439 NPN Silicon H igh-V oltage Power Transistors . . . designed for use in line-operated equipm ent requiring high fj. • • • High DC Current Gain hpE = 4 0 -1 6 0 @ Iq = 20 mAdc


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    PDF MJE3439/D JE3439 O-225AA

    MJE370

    Abstract: MJE3439 JE3440 MJE3370 MJE3440 MJE3371 MJE371 MJE-3439
    Text: MJE3370 SILICON For SpecificationS; See MJE370 Data. ^ U E 3 3 7 1 (SILICON) For Specifications, See MJE371 Data. JE3439, MJE3440 (SILICON) 0.3 AMPERE NPN SILICO N HIG H-VO LTAG E POWER TRANSISTORS NPN SILICON POWER TRANSISTORS . . . designed for use as video o utput amplifiers in television receivers


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    PDF MJE3370 MJE370 MJE3371 MJE371 MJE3439, MJE3440 MJE3439 MJE3440 JE3440 MJE3370 MJE3371 MJE-3439

    JE3439

    Abstract: SGS3439
    Text: ‘ •_ Tggq1 5 3 7 QQa g i o 1 M Ml ^ SGS-THOMSON t^DO^ ILi©1T[H] â [MD(gl 3 3 -o 7 _ JE3439-SGS3439 MJE3440-SGS3440 S G S-THOMSON 3QE » HIGH VOLTAGE TRANSISTOR DESC RIPTIO N The JE3439, MJE3440, SQS3439 and SGS3440 are NPN silicon epitaxial planar transistors respec­


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    PDF MJE3439-SGS3439 MJE3440-SGS3440 MJE3439, MJE3440, SQS3439 SGS3440 OT-82 O-126 OT-32) S3440 JE3439 SGS3439

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    PDF 111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


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    PDF Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902

    JE370

    Abstract: je243 je712 je240 je200 je253 JE703 JE350 je250 JE720
    Text: Power Transistors TO-126 Case T o p View T Y P E NO. NPN PNP 2N4921 2N4918 2N4922 2N4919 2N4923 2N4920 2N5190 2N5193 2N5191 2N5194 2N5192 2N5195 2N5655 2N5656 2N5657 2N6037 2N6034 2N6038 2N6035 2N6039 2N6036 BD135 BD136 BD137 BD138 BD139 BD140 BD175 BD176


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    PDF O-126 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 JE370 je243 je712 je240 je200 je253 JE703 JE350 je250 JE720

    Untitled

    Abstract: No abstract text available
    Text: ^ 7 SGS-THOMSON V # ^D g^ [iL[l TO(MD(gi JE3439-SGS3439 MJE3440-SGS3440 HIGH VOLTAGE TRANSISTOR D E S C R IP T IO N The JE3439, MJE3440, SGS3439 and SGS3440 are NPN silicon epitaxial planar transistors respec­ tively in TO -126 and SOT-82 plastic package. They


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    PDF MJE3439-SGS3439 MJE3440-SGS3440 MJE3439, MJE3440, SGS3439 SGS3440 OT-82 JE3440 S3439 JE3439

    JE350

    Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
    Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168


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    PDF BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 JE350 je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55

    MJE240

    Abstract: MJE721 MJE720 MJE241 MJE700 MJE701 MJE702 MJE703 MJE800 MJE801
    Text: Power Transistors TO-126 Case Continued Bottom View Top View TYPE NO. NPN M JE180 PNP 1 M JE170 ic PD BVCBO BVCEO (A) (W) (V) 00 MAX 3.0 15 @ lc h i :E (mA) V C E ( S A T) @ I C (V) (A) fT (MHz) MIN MAX MIN MIN MIN MAX 60 40 50 250 100 0.3 0.5 50 50 250


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    PDF O-126 mje180 mje170 mje181 mje171 mje182 mje172 mje200 mje210 mje220 MJE240 MJE721 MJE720 MJE241 MJE700 MJE701 MJE702 MJE703 MJE800 MJE801

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


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    PDF 4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    JE3440

    Abstract: JE3439 JE34
    Text: MOT O RO LA SC 12E 0 | L3t.72S4 0005353 3 | X S T R S/ R F T -3 3 -^ r MOTOROLA JE3439 MJE3440 • SEMICONDUCTOR TECHNICAL DATA 0.3 AMPERE NPN SILICON HIGH-VOLTAGE POWER TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed fo r use in line operated equipm ent requiring high fr.


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    PDF MJE3439 MJE3440 JE3440 JE3439 JE34

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


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    PDF 38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175

    U/25/20/TN26/15/850/yd 803 ic

    Abstract: BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 je200 2n5337 S13003 2N6057
    Text: G E N E R A L P U R P O S E T R A N S IS T O R S TY PE ‘c V CE V CEsat 8 A (V) (V) 'o (A) 'b Rthj-c (mA) rc / w ) V CE0 V CB0 'c (V) (V) (A) 22 22 4 BD433 BD434 50 2.00 1.0 0.50 2.00 200 25 40 5 M JE200 M JE210 70 0.50 1.0 0.30 0.50 50 30 30 3 M JE520


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    PDF BD433 JE200 JE520 D44H1 D44H2 D44C1 D44C2 D44C3 2N6288 BD435 U/25/20/TN26/15/850/yd 803 ic BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 2n5337 S13003 2N6057