16875
Abstract: ds1232 P-16852 16876
Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1232 Jan-96 9547 C1 ANAM, K. DN537172ABA 3.0µ OX/NI 16 SOIC STRESS/JOB NO. Preconditioning P/C : HTC Vapor Phase P-16818 READPOINT (Sample Size/No. of Fails)
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DS1232
Jan-96
DN537172ABA
P-16818
P-16852
P-16853,
P-16875
P-16876
16875
ds1232
P-16852
16876
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dk52
Abstract: P-15782 DK53 P15890 P-16795 148259 p16038 P-17201 C19517 P-15837
Text: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 SUMMARY TYPE: PRODUCT DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320 DS80C320
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DS1302)
DS1302
DS21S07A
dk52
P-15782
DK53
P15890
P-16795
148259
p16038
P-17201
C19517
P-15837
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transistor 16870
Abstract: transistor HR DS1230AB P-16870 hr/transistor 16870
Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1230AB Jan-96 9538 H DALLAS DA067510AAA N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-16812 48 Hr
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DS1230AB
Jan-96
DA067510AAA
P-16812
P-16869
P-16870
P-16811
P-16810
transistor 16870
transistor HR
DS1230AB
P-16870
hr/transistor 16870
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Untitled
Abstract: No abstract text available
Text: RMP TRENDS CUMULATIVE DATA DS1000 125°C, 7.0 V 0.40% 10 8 6 0.20% 4 HV. Life, 1000 hrs 0.10% 2 Inf. Life, 48 hrs 0.00% May-95 HV/L Fits 60% Cf I/L % Def 90% Cf 0.30% Jul-95 Sep-95 Feb-96 May-96 Aug-96 CUMULATIVE DATA DS1232 125°C, 7.0 V 0.40% HV. Life, 1000 hrs
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DS1000
May-95
Jul-95
Sep-95
Feb-96
May-96
Aug-96
DS1232
Nov-95
Jan-96
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dk52
Abstract: P-16890 17872 p1908 P1875 P-18701
Text: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 SUMMARY TYPE: PRODUCT DS1302 DS1302 DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 MONITOR DATE JOB NO. Mar-96 Sep-96
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DS1302)
Mar-96
Sep-96
Feb-96
Aug-96
Nov-96
Feb-97
May-96
dk52
P-16890
17872
p1908
P1875
P-18701
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16889
Abstract: B/TDA 16840
Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2107A Jan-96 9552 A6 CARSEM DM510561AAA 1.2µ NITRIDE 16 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase
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Jan-96
P-16840
P-16873
P-16874,
P-16887
P-16888
P-16889
C/100%
P-16890
DM510561AAA
16889
B/TDA 16840
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p15890
Abstract: P-16044 CARSEM
Text: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 SUMMARY TYPE: PRODUCT DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320 DS80C320
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DS1302)
Mar-96
Jan-95
Mar-95
May-95
Jul-95
Sep-95
Dec-95
p15890
P-16044
CARSEM
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Untitled
Abstract: No abstract text available
Text: RMP TRENDS CUMULATIVE DATA DS232A 125°C, 7.0 V 0.40% 15 HV. Life, 1000 hrs 12 Inf. Life, 48 hrs 9 0.20% 6 0.10% Start Dec 95 Data Limited 3 0.00% Jun-96 HV/L Fits 60% Cf I/L % Def 90% Cf 0.30% Sep-96 Dec-96 Mar-97 Jun-97 Sep-97 CUMULATIVE DATA DS1000 125°C, 7.0 V
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DS232A
Jun-96
Sep-96
Dec-96
Mar-97
Jun-97
Sep-97
DS1000
May-96
Aug-96
|
Untitled
Abstract: No abstract text available
Text: RMP TRENDS CUMULATIVE DATA DS232A 125°C, 7.0 V 1.20% 32 0.90% 24 Inf. Life, 48 hrs 0.60% 0.30% 16 Start Dec 95 Data Limited HV/L Fits 60% Cf I/L % Def 90% Cf HV. Life, 1000 hrs 8 0.00% Dec-95 Mar-96 Jun-96 Sep-96 Dec-96 CUMULATIVE DATA DS1000 125°C, 7.0 V
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DS232A
Dec-95
Mar-96
Jun-96
Sep-96
Dec-96
DS1000
Sep-95
Feb-96
May-96
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Untitled
Abstract: No abstract text available
Text: RMP TRENDS CUMULATIVE DATA DS232A 125°C, 7.0 V 1.20% 24 Start Dec 95 Data Limited HV. Life, 1000 hrs Inf. Life, 48 hrs 0.60% 16 0.30% 8 0.00% Dec-95 Mar-96 Jun-96 Sep-96 Dec-96 HV/L Fits 60% Cf I/L % Def 90% Cf 0.90% 32 Mar-97 CUMULATIVE DATA DS1000 125°C, 7.0 V
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DS232A
Dec-95
Mar-96
Jun-96
Sep-96
Dec-96
Mar-97
DS1000
Sep-95
Feb-96
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16880
Abstract: P16905
Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1267 Jan-96 9544 A1 ANAM, K. DN518301AAN 1.2µ OX/NI 16 SOIC STRESS/JOB NO. Preconditioning P/C : 85°C/85% RH, 168 hours HTC Vapor Phase, 3 Passes
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DS1267
Jan-96
P-16821
P-16822
P-16880,
P-16905
P-16906
P-16907
C/100%
P-16908
16880
P16905
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P1653
Abstract: P15890 dallas date code ds12887
Text: RELIABILITY MONITOR SUMMARY DATA STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 SUMMARY TYPE: PRODUCT DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320
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DS1302)
Mar-96
Jan-95
Mar-95
May-95
Jul-95
Sep-95
Dec-95
P1653
P15890
dallas date code ds12887
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p15890
Abstract: P-16100 P-15830 P-15890 p1565 DK53 dk52 C19517 P1537 P-16400
Text: RELIABILITY MONITOR SUMMARY DATA STRESS: PRODUCT DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS21S07A DS80320 DS80320 Burn-in 125°C, 7.0 V. 6.0 V. DS1302 MONITOR DATE JOB NO. Mar-95 May-95 Jul-95 Sep-95
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Mar-95
May-95
Jul-95
Sep-95
Nov-95
Jan-95
p15890
P-16100
P-15830
P-15890
p1565
DK53
dk52
C19517
P1537
P-16400
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Untitled
Abstract: No abstract text available
Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2165 Jan-96 9535 B1 HYUNDAI DL523566AAC 2.0µ OXIDE 24 PDIP STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning: T/C: -55°C to +125°C, 10~
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Jan-96
P-16824
P-16535
P-16824,
P-16854
P-16855
P-16856
C/100%
P-16857
DL523566AAC
|
|
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Untitled
Abstract: No abstract text available
Text: 7 DRAWING MADE 6 5 3 4 2 1 IN T H IR D A NG L E P R O J E C T I O N T H I S DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED AMP BY INCORPORATED. ALL PROD ,19 FOR P U B L I C A T I O N INTERNATIONAL RIGHT5 L OC 5087 RESERVED. DIST DF CODE REVISIONS FO p F
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1-17-9G
-JAN-96
amp348
/home/amp34874/edmnod
|
BD5013
Abstract: No abstract text available
Text: DRAWING T H IS MADE DRAWING IN IS T HI RD ANGLE U N P U B L IS H E D . COPYRIGHT PROJECTION □ 1ST RELEASED FOR PUBLICATION BY AMP INCORPORATED. R E V IS IO N S BD 48 ALL INTERNATIONAL RIGHTS RESERVED. DESCRIPTION RED RA WN ON REV PER ECN OBS -A OBS -3
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PDF
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BD5013
S-22-90
JAN-96_
|
TIP31
Abstract: 103 MI tip312 TIP31A TIP32 TIP32A
Text: TIP31,2 SERIES COMPLEMENTARY SILICON POWER TRANSISTORS TIP31 series NPN & TIP32 series (PNP) are complementary silicon power transistors designed for power amplifiers and switching applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage
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OCR Scan
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PDF
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TIP31
TIP32
hJiI51DR
TIP31/2
TIP31B/2B
TIP31C/2C
unlesIP31
103 MI
tip312
TIP31A
TIP32A
|
Untitled
Abstract: No abstract text available
Text: TIP31,2 CRO SERIES COMPLEMENTARY SILICON POWER TRANSISTORS TIP31 series NPN & TIP32 series (PNP) are complementary silicon power transistors designed for power amplifiers and switching applications. TPifdSISIDR Nil. MMtlrCri! ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage
|
OCR Scan
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TIP31
TIP32
TIP31/2
TIP31A/2A
TIP31B/2B
TIP31C/2C
375mA
300/iS,
Jan-96
|
HD-20
Abstract: MIL-T-10727
Text: 7 DRAWING MADE THIS IN THIRD DRAWING ANGLE 4 P RO JE C TI ON IS UNPUBLISHED. RELEASED FOR P U B L I C A T I O N ,19 COPYRIGHT 19 BY AMP INCORPORATED, HARR ISBURG, P A . ALL INTERNATIONAL RIGHTS RESERVED. AMP PRODUCTS MAY BE COVERED BY U . S . AND FOREIGN PATENTS AND/OR PATENTS PENDING,
|
OCR Scan
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HD-20
JANZ96_
rv026d/dsJ^
MIL-T-10727
|
te 2395
Abstract: 7483 748367-2
Text: D R A W I N G MA DE THIS DRAWING IN T H IR D A N G LE P R O J E C T I O N IS UNPUBLISHED. RELEASED FOR P U B L I C A T I O N ,19 COPYRIGHT 19 BY AMP I NCORPORATED, HARR ISBURG, P A . ALL INTERNATIONAL RIGHTS RESERVED. AMP PRODUCTS MAY BE COVERED BY U.S. AND FOREIGN PATENTS AND/OR PATENTS PENDING,
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OCR Scan
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PDF
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|
Untitled
Abstract: No abstract text available
Text: •«HYUNDAI HYM572A214A F-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM572A214A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of nine HY5117804B in 28.28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 mF and 0.01 mF
|
OCR Scan
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HYM572A214A
72-bit
HY5117804B
HYM572A214AFG
A0-A10)
CAS0-CA57)
DQ0-DQ71)
1EC07-10-JAN96
|
Untitled
Abstract: No abstract text available
Text: « flY im P A i • HYM5V72A404A K-Series 4Mx72-blt CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HYM5V72A404A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY51V16404A in 24/26 pin SOJ or TSOPII and one 2048 bit EEPROM on a 168 pin glass-epoxy printed
|
OCR Scan
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PDF
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HYM5V72A404A
4Mx72-blt
72-bit
HY51V16404A
HYM5V72A404AKG/ATKG/ASLKG/ASLTKG
351MAX
5V72A404
HYM5V72A404AKG
|
52CAE
Abstract: HY5117804
Text: •«HYUNDAI HYM572A414A F-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A414A is a 4M x 72-bit EDO m ode CMOS DRAM m odule consisting of eighteen HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF
|
OCR Scan
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PDF
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HYM572A414A
72-bit
HY5117804B
HYM572A414AFG/ATFG/ASLFG/ASLTFG
A0-A10)
DQ0-DQ71)
1EC07-10-JAN96
52CAE
HY5117804
|
Untitled
Abstract: No abstract text available
Text: 3 Ï COPYRIGHT 1996 AMP INCORPORATED. a l l r i g h t s IOC ZÎ-No y -95 R ELEASED FOR PUBLICATIO N BT TO S P L I C E ANY T H R E E W I R E S 0 . 5 D I A . A L U M. A L L O Y . N O M I N A L S O L I D C O N D U C T O R , OR 0 . 4 TO 0 . 9 D I A . COPPER NOMINAL S O L I D CONDUCTORS.
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OCR Scan
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Jan-96
09HAT64
|