J310 FET Search Results

J310 FET Result Highlights (5)

Part	Manufacturer	Description
GSB311J310H1HR	Amphenol Communications Solutions	USB 3.2, Type A, Receptacle, Right Angle, High Rise, 12mm Height, 9 Pins, Shell Forklock with Nickel Plating, 30u\\ Gold, Dip 2.4mm, Blue High Temperature Housing, Tray Packaging
GSB311J310RH1HR	Amphenol Communications Solutions	USB3.2, A, GEN1, RightAngle, DIP, HI-RISE, 15u\\ GOLD, BLUE, TL 2.35MM
RJF0411JPD-00#J3	Renesas Electronics Corporation	Thermal FETs
RJF0411JPD-01#J3	Renesas Electronics Corporation	Thermal FETs
RJF0605JPV-00#Q7	Renesas Electronics Corporation	Thermal FETs

J310 FET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
symbol transistor BC108 Abstract: BC108 characteristic j310 replacement BC237 J309 X2 dpak U310 transistor based class A amplifier lab motorola JFET 2N3819 JFET 2N3819 MOTOROLA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion J308 J309 1 DRAIN J310 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Gate–Source Voltage VGS	Original	226AA) V218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 symbol transistor BC108 BC108 characteristic j310 replacement BC237 J309 X2 dpak U310 transistor based class A amplifier lab motorola JFET 2N3819 JFET 2N3819 MOTOROLA	PDF
motorola U310 Abstract: Motorola J310 motorola 539 U310 motorola Allen-Bradley 100-k motorola 2443 VK200 rfc vk200 rfc with 6 turns J309 J310 jfet Text: MOTOROLA Order this document by J308/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers J308 N–Channel — Depletion J309 1 DRAIN J310 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25	Original	J308/D 226AA) DeviceJ308/D motorola U310 Motorola J310 motorola 539 U310 motorola Allen-Bradley 100-k motorola 2443 VK200 rfc vk200 rfc with 6 turns J309 J310 jfet	PDF
Untitled Abstract: No abstract text available Text: J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features • • • • This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.	Original	MMBFJ309 MMBFJ310 MMBFJ309 OT-23	PDF
J310 Abstract: j310 equivalent J310 applications J309 MMBFJ310 rf fairchild transistor 100mhz amplifier MMBFJ309 J310G N-CHANNEL dual gate ultra low noise vhf LOW NOISE AMPLIFIER J-310 Text: J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features • • • • This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.	Original	MMBFJ309 MMBFJ310 MMBFJ309 OT-23 J310 j310 equivalent J310 applications J309 MMBFJ310 rf fairchild transistor 100mhz amplifier J310G N-CHANNEL dual gate ultra low noise vhf LOW NOISE AMPLIFIER J-310	PDF
HC-49/pspice model Abstract: J111 spice model U310 spice model jfet spice model GASFET 2n4416 SST310 spice model J176 2n4391 spice U310 Text: AN104 SPICE Parameters for Select JFETs Ed Oxner The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET.	Original	AN104 SST176 2N5116 01-Sep HC-49/pspice model J111 spice model U310 spice model jfet spice model GASFET 2n4416 SST310 spice model J176 2n4391 spice U310	PDF
Siliconix J310 Abstract: GASFET 2N4339 Spice J111 spice model Siliconix AN104 Siliconix JFET U310 spice model jfet spice model J176 SST310 Text: AN104 SPICE Parameters for Select JFETs The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET. Introduction	Original	AN104 2N5116 10-Mar-97 Siliconix J310 GASFET 2N4339 Spice J111 spice model Siliconix AN104 Siliconix JFET U310 spice model jfet spice model J176 SST310	PDF
J111 spice model Abstract: Siliconix AN104 U310 2n4416 jfet datasheet jfet J111 transistor GASFET Siliconix J310 PSpice application note jfet J111 transistor 2N4416 Siliconix Text: AN104 SPICE Parameters for Select JFETs The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET. Introduction	Original	AN104 2N5116 10-Mar-97 J111 spice model Siliconix AN104 U310 2n4416 jfet datasheet jfet J111 transistor GASFET Siliconix J310 PSpice application note jfet J111 transistor 2N4416 Siliconix	PDF
an104 siliconix Abstract: TO-226A U421 jfet Siliconix AN104 jfet spice model SST310 spice model SILICONIX 2N4391 2N4391 J111 J176 Text: AN104 Siliconix SPICE Parameters for Select JFETs Ed Oxner Introduction The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET.	Original	AN104 2N5116 SST176 an104 siliconix TO-226A U421 jfet Siliconix AN104 jfet spice model SST310 spice model SILICONIX 2N4391 2N4391 J111 J176	PDF
buz90af Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163 Text: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391	OCR Scan	2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 OT103 BF996 buz90af P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163	PDF
Untitled Abstract: No abstract text available Text: J308 thru J310* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Rating Symbol Value Drain-Source Voltage Vd S 25 Vdc Gate-Source Voltage VGS 25 Vdc Forw ard Gate Current 'G F 10 m Adc Total Device D issipation (â T a = 25CC Derate above 253C Pd 350 2.8	OCR Scan	O-226AA)	PDF
vk200 choke Abstract: j310 j310c variable trimmer MVM010W SM 4151 J308 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JF ET VH F/UHF A m plifiers N -C h a n n e l — Depletion J308 J309 J310 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage V DS 25 Vdc Gate-Source Voltage VG S 25 Vdc Forward Gate Current 'G F 10 mAdc	OCR Scan	O-226AA) vk200 choke j310 j310c variable trimmer MVM010W SM 4151 J308	PDF
TRANSISTORS 132 GD Abstract: No abstract text available Text: J308 thru J310* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Symbol Value Unit D rain-S ource V o ltag e V DS 25 Vdc G ate-Source V o ltage V GS 25 Vdc Forw ard Gate C u rrent >GF 10 m A dc Total Device D issipation Cw T a = 25°C Derate above 25°C	OCR Scan	O-226AA) TRANSISTORS 132 GD	PDF
vk200 choke Abstract: MVM010W MVM010 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA J F E T V H F/U H F Am plifiers N -Chan nel — Depletion 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage Vd S 25 Vdc Gate-Source Voltage vgs 25 Vdc Forward Gate Current •g f 10 mAdc Total Device Dissipation @ TA = 25°C	OCR Scan	b3b72SS vk200 choke MVM010W MVM010	PDF
J308 Abstract: MCD217 transistor 309 J309 J310 UBB114 ti j309 Text: tbS3T31 0D2M012 2 T2 H A P X Prelim inary specification Philips Sem iconductors N-channel silicon field-effect transistors N AUER J308/309/310 PHILIPS/DISCRETE b?E ]> PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections	OCR Scan	tbS3T31 DD2MG12 J308/309/310 UBB114 MSB033 PINNING-TO-92 J308 MCD217 transistor 309 J309 J310 UBB114 ti j309	PDF

J308 Abstract: MCD214 J309 j310 equivalent transistor 309 J310 BB531 MCD22S Text: Philips Semiconductors Preliminary specification N-channel silicon field-effect transistors NAPC/PHILIPS SEMICOND FEATURES J308/309/310 b3E D WM DD7Eb3ci 472 ISIC3 PIN CONFIGURATION • Low noise • Interchangeability of drain and source connections • High gain.	OCR Scan	J308/309/310 PINNING-TO-92 J31istors MCD22S MCD227 J308 MCD214 J309 j310 equivalent transistor 309 J310 BB531 MCD22S	PDF
bfw11 jfet Abstract: jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960 Text: Small Signal Leaded Devices Field Effect Transistors J-FET cont. ±V DS •d s s -vh{P) GS Pkg (V) (mA) (V) T O -18 T O -18 T O -18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-72 TO-72 TO-72 TO-72	OCR Scan	2N4859 2N4860 2N4861 BF245A/0 BF245A BF245B BF245C BF247A BF247B BF247C bfw11 jfet jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960	PDF
FET BFW11 Abstract: FET BFW10 OF FET BFW11 BFW10 FET OF FET BFW10 BFW12 BF245A sot23 BFW10 n-channel fet BF245A j310 FET Text: 48 RF/Microwave Devices Small-Signal Field-Effect Transistors Junction FET's These are fo r applications in the VHF range. Principal features of these products are their low noise, high transfer conductance and their high input impedance, the latter, in particular, m inim izing signal losses and helping to sim plify	OCR Scan	BF245A/0 BF245A BF245B BF245C BF247A BF247B BF247C BF256A BF256B BF256C FET BFW11 FET BFW10 OF FET BFW11 BFW10 FET OF FET BFW10 BFW12 BF245A sot23 BFW10 n-channel fet BF245A j310 FET	PDF
2n3819 replacement Abstract: MPF102 JFET j310 replacement mpf102 replacement J210 Replacement 2N3819 cross reference MPF102 JFET data sheet 2N5485 mpf102 j305 replacement J300 replacement Text: Siliconix 7-23 s^nalFET Product Specifications confd FET Product Specifications D E V IC E RF A M PLIFIERS GEOM ETRY (Section 4) <3 u) Z 0. UL LL U- mJ ^ ^ ^ cc oc oc cc LL ^ ^ XX 1X X X I X X N N N w w N X X N N N I X X X N N N N N Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z û I o I Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z	OCR Scan	2N6453 2N4393 2N4392 2N6454 2N3821 2N6483 2N6484 2N4416 2n3819 replacement MPF102 JFET j310 replacement mpf102 replacement J210 Replacement 2N3819 cross reference MPF102 JFET data sheet 2N5485 mpf102 j305 replacement J300 replacement	PDF
BFW12 Abstract: bc264c BFT46 Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs N-CHANNEL JUNCTION FETS FOR AMPLIFIERS rating type number characteristics ± V DS max. ’d ss Ciss typ. c rss l v f s l 1 pF) typ.	OCR Scan	PMBFJ308 PMBFJ309 PMBFJ310 PMBF4416 PMBF4416A PMBF5484 PMBF5485 PMBF5486 BFW12 bc264c BFT46	PDF
2ns484 Abstract: mpf102 2N3819 ti MPF112 2N5485 PN4416 U311 2N5078 2N4224 J271 Text: s^nalFET Product Specifications confd FET Product Specifications D E V IC E RF A M PLIFIERS GEOM ETRY (Section 4) <3 u ) Z n 0. UL LL U- mJ ^ ^ ^ cc oc oc cc XX Z Z Z Z Z Z 1 LL ^ ^ X X X I X X N N N ww NXXN NNIXXXN NN NN Z Z Z Z Z Z Z Z Z û I o I Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z	OCR Scan	J232-18 J270-18 2N3819 2N3823 2N4223 2N4224 2N4416 2N4416A 2N5078 2NS484 2ns484 mpf102 2N3819 ti MPF112 2N5485 PN4416 U311 2N5078 2N4224 J271	PDF
motorola U310 Abstract: j310 fet fet j310 FET U310 U310 MOTOROLA J309 U310 fet U309 J308 J310 Text: MOTOROLA SC { DIODES/OPTOJ 6367255 MOTOROLA SC 34 D iT\|t:3b72S5 D IO D E S /O P T O 34C O D B f l O 1! ? 38047 h Q T * i I - IS ' FIELD-EFFECT TRANSISTORS DICE (continued) UC310 DIE NO. UNE SOURCE — DFM145 This die provides performance equal to or better than that of	OCR Scan	UC310 DFM145 motorola U310 j310 fet fet j310 FET U310 U310 MOTOROLA J309 U310 fet U309 J308 J310	PDF
n-channel fet to-92 Abstract: 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan Text: 1. DISCRETES Amplifiers— Junction FET Ordering Information Preferred Part Number Bis min Package n mho •g s s Vp m ín/m ax ta s s m in/max mA V max BVq s s min max Crss max n max pA V pF PF n v / s /líz" 4 C \|SS N -c h a n n e l: 2N3684 TO-72 2N3685	OCR Scan	2N3684 2N3685 2N3686 2N3687 T0-72 2N3821 2N3822 2N3823 n-channel fet to-92 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan	PDF
Untitled Abstract: No abstract text available Text: MMBFU310LT1* M A XIM U M RATINGS Rating Symbol Value Unit Drain-Source Voltage V os 25 Vdc Gate-Source Voltage V GS 25 Vdc *G 10 mAdc Sym bol Max Unit PD 225 mW 1.8 mW/°C r o ja 556 °C/W Tj. Tstfl - 5 5 to +150 Gate Current CASE 318-07, STYLE 10 SOT-23 TO-236AB	OCR Scan	MMBFU310LT1* OT-23 O-236AB) MMBFU310LT1	PDF
2N3819 NATIONAL SEMICONDUCTOR Abstract: National 2N3819 2n3819 surface mount 2N5247 MMBFJ304 MMBFJ305 N CHANNEL JFET 2N3819 2N5951 PN4416 2N5246 Text: bflE D • bSD113D □Q3cm cn 5S7 NSCS NATL SEMICOND DISCRETE TO -52 N Channel DG V p @ V DslB D ¥ GSS Device m (V) Min (V) Min Max 2N3819 25 RelYfsl Re(Yos) (mmho) @ f (nmho) @ f im Ciss Crss (PF) (PF) Max Max Min (MHz) Max (MHz) 8 15 2 1.6 100 NF (dB)@ Rg = 1k	OCR Scan	bSD113D D3I14ci, 2N3819 T0-92 2N4416 PN4416 MMBF4416 O-236* 2N5245 2N3819 NATIONAL SEMICONDUCTOR National 2N3819 2n3819 surface mount 2N5247 MMBFJ304 MMBFJ305 N CHANNEL JFET 2N3819 2N5951 2N5246	PDF

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J310 FET Search Results

J310 FET Result Highlights (5)

J310 FET Datasheets Context Search

symbol transistor BC108

motorola U310

Untitled

J310

HC-49/pspice model

Siliconix J310

J111 spice model

an104 siliconix

buz90af

Untitled

vk200 choke

TRANSISTORS 132 GD

vk200 choke

J308

J308

bfw11 jfet

FET BFW11

2n3819 replacement

BFW12

2ns484

motorola U310

n-channel fet to-92

Untitled

2N3819 NATIONAL SEMICONDUCTOR