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    Untitled

    Abstract: No abstract text available
    Text: 1,1.53^31 002405T 333 « A P X P hilips S em iconductors N-channel silicon field-effect transistors Prelim inary specification PM B FJ308/309/310 N AMER PHILIPS/DISCRETE □7E I "- PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and


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    PDF 002405T FJ308/309/310 UBB114- PMBFJ308: PMBFJ309: PMBFJ310: -SOT23 PMBFJ308/309/310 PMBFJ308,

    Untitled

    Abstract: No abstract text available
    Text: BF256A to C _ / V _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; in­ tended for v.h.f. and u.h.f. applications. Q U ICK R E F E R E N C E D A TA


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    PDF BF256A BF256A D03S7B4 003572b