2SC3268
Abstract: EIAJ C-3
Text: TOSHIBA 2SC3268 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3268 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. NF = 1.7dB, |S2iel2= 15.0dB f = 500MHz NF = 2dB, |S2iel2= 9.5dB (f = 1000MHz) 1.6MAX. Q4±a05. 4.6 M A X . 1.7 MAX.
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2SC3268
500MHz)
1000MHz)
250mm2
-j250
-jl50
2SC3268
EIAJ C-3
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J250
Abstract: KTC3790U j50 transistor J-150 transistor j50
Text: SEMICONDUCTOR KTC3790U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.2dB, |S21e| =13dB f=1GHz . G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage
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KTC3790U
-j250
-j150
-j100
J250
KTC3790U
j50 transistor
J-150
transistor j50
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3790S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES ・Low Noise Figure, High Gain. E B L L ・NF=1.2dB, |S21e| =13dB f=1GHz . D 2 3 H G A 2 1 MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT
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KTC3790S
1-j150
-j100
-j250
-j150
-j100
-j150
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KTC3770V
Abstract: transistor j50 marking s22
Text: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage
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KTC3770V
-j250
-j150
-j100
KTC3770V
transistor j50
marking s22
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2SC4393
Abstract: No abstract text available
Text: TOSHIBA 2SC4393 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4393 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure. NF = 1.5dB, |S2le|2= 16dB f = 500MHz NF = 1.7dB, |S2lel2= 10.5dB (f = 1000MHz) 2.1 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)
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2SC4393
500MHz)
1000MHz)
961001EAA2'
2SC4393
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KTC3605U
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3605U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES B B1 Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=13dB f=1GHz . DIM A A1 B 1 6 2 5 3 4 C A A1 C Two internal isolated Transistors in one package.
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KTC3605U
-j250
-j150
-j100
KTC3605U
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KTC3770U
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3770U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.1dB, |S21e| =11dB f=1GHz . J G A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage
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KTC3770U
-j250
-j150
-j100
KTC3770U
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KTC3600S
Abstract: transistor j50
Text: SEMICONDUCTOR KTC3600S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure, High Gain. E B L L 2 D NF=1.1dB, |S21e| =13dB f=1GHz . H SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage
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KTC3600S
-j250
-j150
-j100
KTC3600S
transistor j50
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KTC3600U
Abstract: 416 J50
Text: SEMICONDUCTOR KTC3600U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.1dB, |S21e| =13dB f=1GHz . G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage
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KTC3600U
-j250
-j150
-j100
KTC3600U
416 J50
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3770UL TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES C 1 ・Low Noise Figure, High Gain. 4 ・NF=1.1dB, |S21e|2=11dB f=1GHz . A 2 3 B MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage
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KTC3770UL
-j250
-j150
-j100
-j100
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transistor j50
Abstract: J250 j50 transistor KTC3790S
Text: SEMICONDUCTOR KTC3790S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure, High Gain. E B L L 2 D NF=1.2dB, |S21e| =13dB f=1GHz . H SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage
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KTC3790S
-j250
-j150
-j100
transistor j50
J250
j50 transistor
KTC3790S
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j50 transistor
Abstract: KTC3790U KTC3790
Text: SEMICONDUCTOR KTC3790U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.2dB, |S21e| =13dB f=1GHz . G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage
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KTC3790U
-j250
-j150
-j100
j50 transistor
KTC3790U
KTC3790
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j50 transistor
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・Low Noise Figure, High Gain. B D G 2 3 K A ・NF=1.1dB, |S21e|2=11dB f=1GHz . MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage
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KTC3770F
-j250
-j150
-j100
-j100
j50 transistor
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KTC3770V
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage
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KTC3770V
-j250
-j150
-j100
KTC3770V
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KTC3770T
Abstract: ON Semiconductor marking J50
Text: SEMICONDUCTOR KTC3770T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B K DIM A B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D F D G 3 1 RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage
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KTC3770T
-j250
-j150
-j100
KTC3770T
ON Semiconductor marking J50
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2SC3605
Abstract: No abstract text available
Text: TOSHIBA 2SC3605 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3605 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS . 5.1 M AX. FEATURES : • Low Noise Figure, High Gain • NF = l.ldB, |S 2lel 2 = lOdB f = 1GHz 0.45 0.55 M AX.
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2SC3605
SC-43
2SC3605
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4844 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Unit in mm Low Noise Figure, High Gain. 2 .110.1 |1 . 2 5 ± NF = 1.8dB, |S2lel2= 9.5dB f=2GHz 0.1 -B □ MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING
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2SC4844
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ic 7496
Abstract: 2SC4840
Text: TOSHIBA 2SC4840 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4840 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F = l.ldB , |S2 ie l2 = 13dB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC4840
-j250
ic 7496
2SC4840
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TRANSISTOR 4841
Abstract: 2sC4841 821e
Text: TOSHIBA 2SC4841 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F =1.8d B , |S2 ie l2 = 8.5dB f=2GHz Unit in mm MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC
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2SC4841
CHARACTE32
-j250
-jl50
TRANSISTOR 4841
2sC4841
821e
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Untitled
Abstract: No abstract text available
Text: FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package
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FLL200IB-1,
FLL200IB-2,
FLL200IB-3
FLL200IB-1)
FLL200IB-3
FCSI0598M200
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CXA3068N
Abstract: L-band Down Converter for Satellite Tuner
Text: CXA3068N L-band Down Converter for Satellite Tuner Description The CXA3068N is a monolithic IC to down-convert the L-band 930 to 2150 MHz signal for the satellite broadcasting receiver. It has a double-balanced mixer, local oscillator circuit and IF amplifier on chip.
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CXA3068N
CXA3068N
16-pin
2630MHz
1430MHZ
16PIN
SSOP-16P-L01
P-SSOP16-4
L-band Down Converter for Satellite Tuner
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2SC5088
Abstract: J150 J250
Text: 2SC5088 東芝トランジスタ シリコン NPN エピタキシャルプレーナ形 2SC5088 ○ VHF~UHF 低雑音増幅用 • 単位: mm 雑音特性が優れています。 : NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz 最大定格 (Ta = 25°C) 項 目 記 号
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2SC5088
-j250
-j150
-j100
2SC5088
J150
J250
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Untitled
Abstract: No abstract text available
Text: 2SC5087 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol
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2SC5087
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IF converter 2230 MHz
Abstract: CXA3068N colpitts oscillator circuit L-band Down Converter for Satellite Tuner
Text: CXA3068N L-band Down Converter for Satellite Tuner For the availability of this product, please contact the sales office. Description The CXA3068N is a monolithic IC to down-convert the L-band 930 to 2150 MHz signal for the satellite broadcasting receiver. It has a double-balanced
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CXA3068N
CXA3068N
2630MHz
1430MHZ
16PIN
SSOP-16P-L01
P-SSOP16-4
IF converter 2230 MHz
colpitts oscillator circuit
L-band Down Converter for Satellite Tuner
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