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    STMicroelectronics J2N2907AUB1

    Hi-Rel Bipolar Transistor PNP 60V -0.5A 4-Pin UB SMD Waffle Pack - Bulk (Alt: J2N2907AUB1)
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    Microchip Technology Inc JAN2N2907A

    Bipolar Transistors - BJT Small-Signal BJT
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    Mouser Electronics JAN2N2907A 7,224
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    Microchip Technology Inc Jantxv2N2907AUB

    Bipolar Transistors - BJT Small-Signal BJT
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    Mouser Electronics Jantxv2N2907AUB 1,968
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    Microchip Technology Inc Jantxv2N2907A

    Bipolar Transistors - BJT Small-Signal BJT
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    Mouser Electronics Jantxv2N2907A 1,123
    • 1 $4.44
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    Microchip Technology Inc JANTX2N2907AUB

    Bipolar Transistors - BJT Small-Signal BJT
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    Mouser Electronics JANTX2N2907AUB 1,066
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    J 2N2907A Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    J 2N2907A Thomson-CSF Condensed Data Book 1977 Scan PDF
    J2N2907A Thomson-CSF Condensed Data Book 1977 Scan PDF
    J-2N2907A Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    J.2N2907A Thomson-CSF Condensed Data Book 1977 Scan PDF

    J 2N2907A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2222A TO-92

    Abstract: 2N2222A plastic 2N2907A TO-92 K 2056 transistor transistor 2n2222a data sheet to-92 transistor K 2056 Transistor 2N2222A 2N2907A plastic 2N2222A npn transistor 2n2222a transistor
    Text: 2N2222A NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92 Complementary PNP type available 2N2907A G H Collector J 3 A D 2 PACKAGING INFORMATION B Base Weight: 0.2056 g


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    PDF 2N2222A 2N2907A 150mA, 500mA 100MHz 01-June-2005 2N2222A TO-92 2N2222A plastic 2N2907A TO-92 K 2056 transistor transistor 2n2222a data sheet to-92 transistor K 2056 Transistor 2N2222A 2N2907A plastic 2N2222A npn transistor 2n2222a transistor

    switched reluctance motor IGBT

    Abstract: HD-705-6 spra420 irf740 switching 3 phase motor driver power inverter schematic diagram irf740 3 hp 1500 rpm a.c. induction motor winding data emerson three phase dc motor driver service note switched reluctance motor parameter IGBT for switched reluctance motor fan motor winding formula
    Text: Application Report SPRA600 - October 1999 A Variable-Speed Sensorless Drive System for Switched Reluctance Motors Stephen J. Fedigan, Ph.D. and Charles P. Cole DSPS Research and Development Center ABSTRACT With the advent of high-speed digital signal processors DSPs specialized for motion control


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    PDF SPRA600 switched reluctance motor IGBT HD-705-6 spra420 irf740 switching 3 phase motor driver power inverter schematic diagram irf740 3 hp 1500 rpm a.c. induction motor winding data emerson three phase dc motor driver service note switched reluctance motor parameter IGBT for switched reluctance motor fan motor winding formula

    2N2907AUB

    Abstract: No abstract text available
    Text: ¡J8BBBBB88& p | M iwiHBBffi smssssPe .rfHHHHHHHHMh. 1m1 itittnnnnn hhhhhhk-. loniftBHhr. I Ir ^888o 88% #f 1 l D a t a S he e t No. 2 N 2 9 0 7 A U B $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N2907A Type 2N2907AUB G eom etry 0600 P olarity PNP Q ual Level: J A N -J A N S


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    PDF J8BBBBB88& 2N2907A 2N2907AUB F-19500/291 2N2907AUB

    Untitled

    Abstract: No abstract text available
    Text: ¡J8BBBBB88& p |M iwiHBBffi smssssPe .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. loniftBHhr. r o f l I I ^88888% # 1 Da ta S he e t No. 2 N 2 9 0 7 A $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N2907A Type 2N2907A G eom etry 0600 P olarity PNP Q ual Level: J A N -J A N S


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    PDF J8BBBBB88& 2N2907A F-19500/291

    2N6987 MOTOROLA

    Abstract: 2N6987 MIL-STD-750 2072 motorola transistor 2N2907A
    Text: MOTOROLA SC XSTRS/R F 12E D | b3b?2S4 QDâfe.453 1 | ‘X'H3~2S PNP Hermetic Silicon 2N6987' 2N6988 Quad General-Purpose Transistors Dual-In-Line and Flatpack Full Mil-S-19500 Qualified to JA N , J T X and J T X V Levels 2N6987 CERAMIC CASE 632-08, STYLE 1 Î


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    PDF Mil-S-19500 2N2907A M19500/2N6987, 2N6988 Mil-Std-750, 2N6987, 2N6987 MOTOROLA 2N6987 MIL-STD-750 2072 motorola transistor 2N2907A

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    2N3055E specification

    Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
    Text: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349


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    PDF ai331 2N2906\ 2N2906A* 2N2907 2N2907A 2N2913y 2N2914\ 2N2915 2N2916 2N2917 2N3055E specification 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package

    RNW transistor

    Abstract: 2n3486a 2N3485
    Text: TYPES 2N3485, 2N3485A, 2N3486. 2N3486A P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 5 7 8 8 5 , J U L Y 1 965 DESIGNED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND GENERAL PURPOSE AMPLIFIER APPLICATIONS • Electrically Identical to 2N2906, 2N2906A, 2N2907, and 2N2907A in


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    PDF 2N3485, 2N3485A, 2N3486. 2N3486A 2N2906, 2N2906A, 2N2907, 2N2907A 2N3485 2N3486 RNW transistor

    2N3350

    Abstract: Thyristor TO39 2N2906 2N2906A 2N2907 2N2907A 2N2914 2N2915 2N2916 2N2917
    Text: Type No. BS/CECC Polarity 2N2906\ CV-0 PN P 2N2906A; PNP 1CV' ° 2N2907 1f f j CV-0 PN P CV-0 PN P 2N2907A 2N2913y1 50002-186 NPN Dual 6 1 3 31 87 37E SEMELAB L T D •c hpE @ VCE & lc Package VCEO cont T018 T018 T018 T018 T077 40 60 -40 60 45 0.6 0.6 0.6


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    PDF ai331 2N2906\ 2N2906A* 2N2907 2N2907A 2N2913y 2N2914\ 2N2915 2N2916 2N2917 2N3350 Thyristor TO39 2N2906 2N2906A 2N2907 2N2914

    2n2907Jan

    Abstract: N906a 2N2907AJAN
    Text: SEM IC O N D U C TO R t e c h n ic a l d a ta 2N2906JAN, JTX, JTXV 2N2906AJAN, JTX, JTXV 2N2907JAN, JTX, JTXV 2N2907AJAN, JTX, JTXV, J A N S C R V ST A LO fJC S 2805 Veterans Highway Suite 14 Processed per M IL-S-19500 291 PNP Silicon Small-Signal Transistors


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    PDF 2N2906JAN, 2N2906AJAN, 2N2907JAN, 2N2907AJAN, IL-S-19500 2N2906 2N290T N2906A 2N2907A 1177b 2n2907Jan N906a 2N2907AJAN

    CS5012A

    Abstract: CS5014 CS5016 cs5016-jp32 BT 815 transistor atl64
    Text: CS5016/14/12A 16, 14, & 12-Bit, Self-Calibrating A/D Converters Description Features - The CS5012A/14/16 are 12,14 and 16-bit monolithic an­ alog to digital converters with conversion times of 7.2 |js, 14.25 |js and 16.25 |j s . Unique self-calibration circuitry


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    PDF CS5016/14/12A 12-Bit, 16-Bit CS5016 CS5014 CS5012A 150mW CS5012A/14/16 CS501X/511X cs5016-jp32 BT 815 transistor atl64

    CMPZ4124

    Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
    Text: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches


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    PDF OT-23 350mW CMPT8099 CMPT2222A OT-23 OT-223 OT-89 CQ89D CQ89DS CMPS5061 CMPZ4124 CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B

    N2222

    Abstract: SL100B pnp SL100 SK100B SL100 npn NPN pnp MATCHED PAIRS 2n2905A 2N2219A BC188B SL100A N2222A NPN SL100
    Text: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B


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    PDF Tj-25 Ta-26Â Tc-25 /2N3701 T0-18 N4030 2N4032 N4033 300jus O-105 N2222 SL100B pnp SL100 SK100B SL100 npn NPN pnp MATCHED PAIRS 2n2905A 2N2219A BC188B SL100A N2222A NPN SL100

    SL100B

    Abstract: SL100 TRANSISTORS SL100A SL100 npn NPN SL100 BF107 SL100h N4030 N2222A sg103
    Text: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B


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    PDF Tj-25 Ta-26Â To-25 /2N3701 T0-18 N4030 SN4031 2N4032 /2N4033 O-105 SL100B SL100 TRANSISTORS SL100A SL100 npn NPN SL100 BF107 SL100h N2222A sg103

    MAX715CWG

    Abstract: MAX714 motorola transistor 2N2907A Bt 35 transistor Bt 35 F transistor HX749 coil 2n2222a MAX715 MAX716EVKIT TO-213
    Text: 19-4507; Rev. 1 ;3 /9 2 / l/ l/ J X I/ l/ l B attery-P ow ered Supply System s G e n e ra l D e s c rip tio n F e a tu re s ♦ Four Logic-Controlled +5V Regulators The MAX716 com bines circuitry for four low-dropout linear


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    PDF MAX714/715/716 MAX716 InpuMAX716C/D MAX716EPI MAX716EWI MAX716MJI MAX716EVKIT MAX715CWG MAX714 motorola transistor 2N2907A Bt 35 transistor Bt 35 F transistor HX749 coil 2n2222a MAX715 TO-213

    LB 122 transistor

    Abstract: 2N2907A surface mount 2N2907A HCT2907A JAN2N2907A ma131
    Text: OPTEK TEC H NO LO GY INC 4flE » • L^SSaO 000145 1 110 ■ Product Bulletin OTK _ £>j OPTEK M a y 1989 Surface Mount PNP General Purpose Transistor Type HCT2907A Features T 2/7 -Q°i Absolute Maximum Ratings TA = 25°C unless otherwise noted) • Surface mountable on ceramic or printed


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    PDF HCT2907A 2N2907A MIL-S-19500 LB 122 transistor 2N2907A surface mount 2N2907A JAN2N2907A ma131

    C495 transistor

    Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
    Text: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250


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    PDF BF594 BF594, BF194 BF595 BF195 BF597 BF197 2N4996 BS9300 2N2219A C495 transistor BF194 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495

    bcy5b

    Abstract: BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720
    Text: I— B PIN C O N FIG UR ATIO N 1. Emitter 2. Base 3. C ollector DIM MIN M AX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0 ,40 0,53 E - 0,76 F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45D E G ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


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    PDF 45DEG Tas25Â 2N706A BCY79-9 BCY79-10 BFX37 CF103 bcy5b BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


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    PDF 2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815

    2n3072

    Abstract: No abstract text available
    Text: ti CENTRAL SEM ICON DU CTOR : 1VÖVVOJ U CINI R A L D E I nû'î'JtiB ODDOSSG 3 T ¿ v n h an r t *j* 7 / «•* 6 i. ci r nono^zzo ~ O* StrtlCUN Ü UtTÜR V eb hFE at •c V V min max mA V 2N2800 2N2801 2N2837 2N2838 -2N2904 50 50 50 50 60 35 35 35 35


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    PDF 2N2800 2N2801 2N2837 2N2838 -2N2904 2N2904A 2N2905 2N2905A 2N2906 2N2906A 2n3072

    N2905

    Abstract: N2907 N2905A 2N2219 transistor 2N2102 2N2218A 2N2219A 2N2221A 2N2904A 2N2906A
    Text: PNP SWITCHING T A B LE 4 SILICO N PLA N A R M EDIUM AN D HIGH SP E E D SW ITCH IN G T R A N S IS T O R S Type V c EO Max VcE sat at hFE f j Min at at Switching Times (M ax) at n 1 The devices shown in this table are characterised for general medium voltage, medium and


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    PDF ZT189 T0-18 2N4036 2N2102 2N2904A 4BCY79 BCY59 N2904 2N2218 N2905 N2907 N2905A 2N2219 transistor 2N2102 2N2218A 2N2219A 2N2221A 2N2906A

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEI1IC0ND/DISCRETE | TS DÌf| 752D533 O D D ^ E S 3 95D 04925 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /D I S C R E T E T? Z D L .J NPN LOW NOISE TABLE 5 - NPN SILICON PLANAR LOW NOISE TRANSISTORS i The transistors shown in this table are characterised for low noise, low level amplification and are particularly


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    PDF 752D533 2N2907A ZT181 BCY58 BC109 BCY78 ZT187 30-15K BC179

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


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    PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28

    BCY79-9

    Abstract: bcy791 BcY591 BSX21 2N706 BC107C BC109C pin configuration 2N706A 2N718A 2N720
    Text: TO-18 h - B -h ! o PIN C O N F IG U R A T IO N 1. Em itter 2. B a s e 3. Co llector DIM MIN A 5 ,2 4 M AX 5 ,8 4 B 4 ,5 2 4 ,9 7 C 4,31 5 ,3 3 D 0 ,4 0 0 ,5 3 0 ,7 6 E - F - 1,27 G - 2 ,9 7 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 D E G ALL DIMENSIONS ARE IN M.M.


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    PDF 2N706 2N706A BCY79-9 BCY79-10 BFX37 CF103 23fl33cm 000135T BCY79-9 bcy791 BcY591 BSX21 BC107C BC109C pin configuration 2N718A 2N720