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Catalog Datasheet	MFG & Type	Document Tags	PDF
Inverter Welder Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM	Original	PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter	PDF
ixgh48n60c3d1 Abstract: IXYS IXGH48N60C3D1 48N60C3D1 48N60 ixgh48n60c3d Text: GenX3TM 600V IGBT with Diode VCES IC25 VCE sat tfi(typ) IXGH48N60C3D1 High speed PT IGBTs for 40-100kHz Switching = = ≤ = 600V 75A 2.5V 38ns TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ	Original	40-100kHz IXGH48N60C3D1 O-247 IC110 ID110 ixgh48n60c3d1 IXYS IXGH48N60C3D1 48N60C3D1 48N60 ixgh48n60c3d	PDF
Untitled Abstract: No abstract text available Text: GenX3TM 600V IGBT with Diode IXGH48N60C3D1 VCES IC110 VCE sat tfi(typ) High speed PT IGBT for 40-100kHz Switching = = ≤ = 600V 48A 2.5V 38ns TO-247 Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGH48N60C3D1 IC110 40-100kHz O-247 ID110	PDF
IXGH48N60C3D1 Abstract: 48N60C3D1 IXYS IXGH48N60C3D1 ixgh48n60c3d IXGH48N60 48N60 48N60C3 IXGH48N60C3 Text: GenX3TM 600V IGBT with Diode IXGH48N60C3D1 VCES IC110 VCE sat tfi(typ) High speed PT IGBT for 40-100kHz Switching = = ≤ = 600V 48A 2.5V 38ns TO-247 Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGH48N60C3D1 IC110 40-100kHz O-247 ID110 IXGH48N60C3D1 48N60C3D1 IXYS IXGH48N60C3D1 ixgh48n60c3d IXGH48N60 48N60 48N60C3 IXGH48N60C3	PDF