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    IXYS Corporation IXXH80N65B4

    IGBT 650V 160A 625W TO247AD
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    DigiKey IXXH80N65B4 Tube 6,466 1
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    Mouser Electronics IXXH80N65B4 997
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    IXYS Corporation IXXH80N65B4D1

    IGBT PT 650V 180A TO247AD
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    IXYS Corporation IXXH80N65B4H1

    IGBT PT 650V 160A TO247AD
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    DigiKey IXXH80N65B4H1 Tube 654 1
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    Mouser Electronics IXXH80N65B4H1 300
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    Quest Components IXXH80N65B4H1 13
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    TME IXXH80N65B4H1 1
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    New Advantage Corporation IXXH80N65B4H1 1,607 1
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    IXYS Corporation IXXH30N60B3D1

    IGBT 600V 60A 270W TO247
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    DigiKey IXXH30N60B3D1 Tube 653 1
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    Mouser Electronics IXXH30N60B3D1 457
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    Newark IXXH30N60B3D1 Bulk 153 1
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    TME IXXH30N60B3D1 106 1
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    IXYS Corporation IXXH50N60B3D1

    IGBT 600V 120A 600W TO247
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    DigiKey IXXH50N60B3D1 Tube 300 1
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    IXXH Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXXH100N60B3 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 220A 830W TO247AD Original PDF
    IXXH100N60C3 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 190A 830W TO247AD Original PDF
    IXXH110N65C4 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 234A 880W TO247AD Original PDF
    IXXH150N60C3 IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V TO247 Original PDF
    IXXH30N60B3 IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V TO247 Original PDF
    IXXH30N60B3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 270W TO247 Original PDF
    IXXH30N60C3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 270W TO247 Original PDF
    IXXH30N65B4 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 65A 230W TO247AD Original PDF
    IXXH30N65B4D1 IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT Original PDF
    IXXH30N65C4D1 IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT Original PDF
    IXXH40N65B4 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 120A 455W TO247AD Original PDF
    IXXH40N65B4D1 IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT Original PDF
    IXXH40N65B4H1 IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 650V 120A 455W TO247AD Original PDF
    IXXH50N60C3 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 100A 600W TO247AD Original PDF
    IXXH50N60C3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 100A 600W TO247AD Original PDF
    IXXH60N65B4 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 116A 455W TO247AD Original PDF
    IXXH60N65B4H1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 116A 380W TO247AD Original PDF
    IXXH60N65C4 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 118A 455W TO247AD Original PDF
    IXXH75N60C3D1 IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 150A 750W TO247 Original PDF
    IXXH80N65B4 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 160A 625W TO247AD Original PDF

    IXXH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXXH100N60B3

    Abstract: 100n60
    Text: Advance Technical Information XPTTM 600V GenX3TM IXXH100N60B3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30 kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		PDF IXXH100N60B3 IC110 150ns O-247 100N60B3 0-10-A IXXH100N60B3 100n60

    30N60B3D

    Abstract: No abstract text available
    Text: IXXH30N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


    Original     		PDF IXXH30N60B3D1 IC110 125ns O-247 IF110 30N60B3D1 30N60B3D

    IXXH50N60B3D1

    Abstract: No abstract text available
    Text: IXXH50N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30kHz Switching 600V 50A 1.80V 135ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


    Original     		PDF IXXH50N60B3D1 IC110 5-30kHz 135ns O-247 IF110 IXXH50N60B3D1

    Untitled

    Abstract: No abstract text available
    Text: XPTTM 600V IGBTs GenX3TM IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 VCES = 600V IC110 = 50A VCE sat  1.80V TO-263 (IXXA) Extreme Light Punch Through IGBT for 5-30 kHz Switching G E C (Tab) TO-220 (IXXP) Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		PDF IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 IC110 O-263 O-220 50N60B3D1 3-13-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXXH80N65B4H1 XPTTM 650V IGBT GenX4TM w/ Sonic Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 650V 80A 2.0V 63ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		PDF IXXH80N65B4H1 IC110 O-247 IF110 80N65B4 2-01-13-A

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information 600V XPTTM IGBT GenX3TM IXXH150N60C3 VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


    Original     		PDF IXXH150N60C3 IC110 20-60kHz O-247 150N60C3

    375A1

    Abstract: IXXH75N60C3
    Text: Advance Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH75N60C3 IC110 O-247 062in. 75N60C3 375A1 IXXH75N60C3

    75N60B3D1

    Abstract: IXXH75N60B3
    Text: Advance Technical Information IXXH75N60B3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH75N60B3 IC110 125ns O-247 062in. 75N60B3D1 IXXH75N60B3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IC110 IXXH75N60C3D1 O-247 IF110 75N60C3

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXXH75N60C3 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IC110 IXXH75N60C3 O-247 Non60 75N60C3

    IXXH30N60B3D1

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH30N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IC110 IXXH30N60B3D1 125ns O-247 IF110 30N60B3D1 IXXH30N60B3D1

    80N65B4

    Abstract: No abstract text available
    Text: Advance Technical Information IXXH80N65B4 XPTTM 650V IGBT GenX4TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 650V 80A 2.0V 63ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH80N65B4 IC110 O-247 80N65B4

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM IXXH100N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		PDF IXXH100N60C3 IC110 20-60kHz O-247 100N60C3 0-10-A

    DS100493

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXXH60N65C4 XPTTM 650V IGBT GenX4TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ 650 650 V V VGES VGEM


    Original     		PDF IXXH60N65C4 IC110 O-247 60N65C4 DS100493

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information 600V XPTTM IGBTs GenX3TM VCES = 600V IC110 = 50A VCE sat ≤ 1.80V IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 TO-263 AA (IXXA) Extreme Light Punch Through IGBT for 5-30 kHz Switching G E C (Tab) TO-220AB (IXXP) Symbol Test Conditions


    Original     		PDF IC110 IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 O-263 O-220AB 50N60B3D1

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V GenX3TM VCES IC110 VCE sat tfi(typ) IXXH50N60C3 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 50A 2.30V 42ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		PDF IC110 IXXH50N60C3 O-247 50N60C3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		PDF IC110 IXXH75N60B3D1 125ns O-247 IF110 75N60B3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXXH110N65C4 XPTTM 650V IGBT GenX4TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ 650 650 V V


    Original     		PDF IXXH110N65C4 IC110 110N65C4 1-30-13-A

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXXH30N60C3 XPTTM 600V IGBT GenX3TM VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 600V 30A 2.2V 32ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH30N60C3 IC110 O-247 30N60C3D1

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXXH40N65B4H1 XPTTM 650V IGBT GenX4TM w/ Sonic Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 650V 40A 1.80V 54ns TO-247 AD Symbol Test Conditions Maximum Ratings


    Original     		PDF IXXH40N65B4H1 IC110 O-247 IF110 25tion 40N65B4H1 01-09-13/DMHP19-067F

    150-A54

    Abstract: No abstract text available
    Text: IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.3V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		PDF IXXH75N60C3D1 IC110 O-247 IF110 062in. 75N60C3 150-A54

    60N65C4

    Abstract: No abstract text available
    Text: Advance Technical Information IXXH60N65C4 XPTTM 650V IGBT GenX4TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ 650 650 V V VGES


    Original     		PDF IXXH60N65C4 IC110 O-247 60N65C4

    IXXH50N60B3D1

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM IGBT 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH50N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 50A 1.80V 135ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IC110 IXXH50N60B3D1 135ns O-247 IF110 50N60B3D1 IXXH50N60B3D1

    75N60

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		PDF IXXH75N60B3D1 IC110 125ns O-247 IF110 062in. 75N60B3 75N60