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    IXTV02N250S Search Results

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    IXTV02N250S Price and Stock

    IXYS Corporation IXTV02N250S

    MOSFET N-CH 2500V 200MA PLUS220
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    IXTV02N250S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTV02N250S IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 2500V .2A PLUS220 Original PDF

    IXTV02N250S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTH02N250

    Abstract: IXTV02N250S PLUS220SMD
    Text: Advance Technical Information IXTH02N250 IXTV02N250S High Voltage Power MOSFET VDSS ID25 RDS on = = ≤ 2500V 200mA Ω 450Ω N-Channel Enhancement Mode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH02N250 IXTV02N250S 200mA O-247 100mA 02N250 9-09-A IXTH02N250 IXTV02N250S PLUS220SMD

    IXTA02N250

    Abstract: No abstract text available
    Text: IXTA02N250 IXTH02N250 IXTV02N250S High Voltage Power MOSFETs VDSS ID25 RDS on = = ≤ 2500V 200mA Ω 450Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA02N250 IXTH02N250 IXTV02N250S 200mA O-263 O-247 PLUS220SMD O-247) PLUS220 O-263)

    IXTH02N250

    Abstract: IXTV02N250S PLUS220SMD DS100187B 02N250
    Text: IXTH02N250 IXTV02N250S High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 2500V 200mA Ω 450Ω TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH02N250 IXTV02N250S 200mA O-247 100ms 02N250 10-20-10-B IXTH02N250 IXTV02N250S PLUS220SMD DS100187B

    DS100187A

    Abstract: IXTV02N250S IXTH02N250 PLUS220SMD 02N250
    Text: Preliminary Technical Information IXTH02N250 IXTV02N250S High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 2500V 200mA Ω 450Ω TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 2500 V


    Original     		PDF IXTH02N250 IXTV02N250S 200mA O-247 100ms 02N250 10-20-10-B DS100187A IXTV02N250S IXTH02N250 PLUS220SMD

    IXTA02N250

    Abstract: No abstract text available
    Text: High Voltage Power MOSFETs IXTA02N250 IXTH02N250 IXTV02N250S VDSS ID25 RDS on = = ≤ 2500V 200mA Ω 450Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA02N250 IXTH02N250 IXTV02N250S 200mA O-263 IXTA02N250 100ms

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		PDF O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250